Inchange Semiconductor Product Specification 2SC3179 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SA1262 ·Low collector saturation voltage APPLICATIONS ·Audio and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 4 A IB Base current 1 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3179 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=25mA ,IB=0 VCE(sat) Collector-emitter saturation voltage IC=2A; IB=0.2 A 0.6 V ICBO Collector cut-off current VCB=80V; IE=0 100 μA IEBO Emitter cut-off current VEB=6V; IC=0 100 μA hFE DC current gain IC=1A ; VCE=4V fT Transition frequency IE=-0.2A ; VCE=12V 15 MHz COB Output capacitance f=1MHz ; VCB=10V 60 pF 0.2 μs 1.9 μs 0.29 μs 60 UNIT V 40 Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=2A IB1=-IB2=0.2A RL=10Ω;VCC=20V 2 Inchange Semiconductor Product Specification 2SC3179 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3