Inchange Semiconductor Product Specification 2SB1647 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2560 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 导体 半 电 Absolute maximum ratings(Ta=℃) SYMBOL UNIT -150 V -150 V -5 V Collector current -15 A Base current -1 A 130 W VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO IC IB CONDITIONS TOR VALUE 固 PARAMETER C U D ON IC M E ES G N A INCH Emitter-base voltage Open emitter Open base Open collector PC Collector power dissipation TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1647 Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-10A ;IB=-10mA -2.5 V VBEsat Base-emitter saturation voltage IC=-10A ;IB=-10mA -3.0 V ICBO Collector cut-off current VCB=-150V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE DC current gain IC=-10A ; VCE=-4V Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 320 pF fT Transition frequency IC=-2A ; VCE=-12V 45 MHz 导体 半 电 MIN TYP. -150 固 ts Storage time tf Fall time IC=-10A;RL=4Ω IB1=- IB2=-10mA VCC=-40V M E S GE N A H INC hFE Classifications O P Y 5000-12000 6500-20000 15000-30000 2 V R O T UC D N O IC Turn-on time UNIT 5000 Switching times ton MAX 0.7 μs 1.6 μs 1.1 μs Inchange Semiconductor Product Specification 2SB1647 Silicon PNP Darlington Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3