SKM 200GB126D ... Absolute Maximum Ratings Symbol Conditions IGBT ) - *+ , $ - /+0 , *+,! % /*00 *"0 & 10 , /20 & 500 & 7 *0 - /*+ , /0 ; *+ , *00 & 10 , /=0 & 500 & - /+0 , //00 & *+ , *00 & 10 , /=0 & 500 & //00 & +00 & - ? =0 >>> @ /+0 , ? =0 >>> @ /*+ , =000 $34*#$ 6) Trench IGBT Modules "00 8 6 9 *0 8 ) : /*00 Inverse Diode $< - /+0 , $<34 $<34*#$< SKM 200GB126D $<)4 /0 8 > SKM 200GAL126D Freewheeling Diode Features ! " # $ Typical Applications* % & % '() Units *+ , $34 SEMITRANS® 3 Values $< - /+0 , $<34 $<34*#$< $<)4 /0 8 > - /+0 , Module $34) &! / > Characteristics Symbol Conditions IGBT 6 6 ! $ " & $) 6 0 ! ) *+,! % min. typ. max. Units + +!1 "!+ 0!/ 0!5 & - *+ , / /!* - /*+ , 0!2 /!/ - *+, =!A "!5 B - /*+, A!5 2 B /!A *!/+ * *!=+ - *+ , - /*+ , 0 6 /+ $ /+0 &! 6 /+ - *+, > - /*+, > *+! 6 0 / 4C D6 6 ?1 ? @*0 36 - *+ , % % 36 /!+ B 36 /!+ B "00 $ /+0& - /*+ , 6 7/+ & GB 1 GAL /0!1 0!2 < < 0!2 < /+50 + E *"0 =0 /1 +=0 //0 F 3 -? F $6G 11-09-2006 SEN 0!/5 HIJ © by SEMIKRON SKM 200GB126D ... Characteristics Symbol Conditions Inverse diode < $< /+0 &8 6 0 <0 < ® SEMITRANS 3 Trench IGBT Modules $334 D $< /+0 & %I% +000 &I; 6 ?/+ 8 "00 3 -?K %% min. typ. max. Units - *+ , > /!" /!1 - /*+ , > /!" /!1 - *+ , / /!/ - /*+ , 0!1 0!2 - *+ , = =!A B - /*+ , +!5 " B - /*+ , *=0 =* & ; F 0!5 HIJ FWD SKM 200GB126D SKM 200GAL126D < $< /+0 &8 6 0 <0 < Features ! " # $ Typical Applications* % & % '() $334 D $< /+0 & %I% +000 &I; 6 ?/+ 8 "00 3 -?<K %% - *+ , > /!" /!1 - /*+ , > /!" /!1 - *+ , / /!/ - /*+ , 0!1 0!2 - *+ , = =!A - /*+ , +!5 " - /*+ , *=0 =* & ; F 0!5 HIJ Module L 3M@M /+ >! ? 3 ? % 4 N 4" 4 4+ *0 *+ , 0!5+ B /*+ , 0!+ B 0!051 HIJ 5 + O *!+ + O 5*+ This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. GB 2 GAL 11-09-2006 SEN © by SEMIKRON SKM 200GB126D ... SEMITRANS® 3 Zth Symbol Zth(j-c)l Conditions Values Units 3 3 3 3 / * 5 = / * 5 2+ *A "!A /!5 0!0A== 0!001A 0!00* NIJ NIJ NIJ NIJ = 0!000/ 3 3 3 3 / * 5 = / * 5 *00 10 /A 5 0!0+5" 0!00+" 0!02 NIJ NIJ NIJ NIJ = 0!000* Zth(j-c)D Trench IGBT Modules SKM 200GB126D SKM 200GAL126D Features ! " # $ Typical Applications* % & % '() GB 3 GAL 11-09-2006 SEN © by SEMIKRON SKM 200GB126D ... Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 11-09-2006 SEN © by SEMIKRON SKM 200GB126D ... Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 5 11-09-2006 SEN © by SEMIKRON SKM 200GB126D ... UL Recognized File 63 532 K +" K+" 6 6G K+A 11-09-2006 SEN 6&L © by SEMIKRON