10-FZ06NBA110FP-M306L28 Maximum Ratings

10-FZ06NBA110FP-M306L28
target datasheet
flowBoost0
600V/110A PS*
Features
flow0 12mm housing
● *PS: 2x 110A parallel switch (100A IGBT and 99mΩ MOSFET)
● high speed IGBT with C6 MOSFET and SiC buck diodes
● high efficiency dual booster
● ultra fast switching frequency
● low inductance layout
Target Applications
Schematic
● solar inverter
● UPS
Types
● 10-FZ06NBA110FP-M306L28
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
600
V
72
96
A
400
A
131
199
W
±20
V
5
400
μs
V
175
°C
600
V
49
63
A
210
A
88
133
W
175
°C
Input Boost IGBT
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
VCE
IC
ICpulse
Power dissipation per IGBT
Ptot
Gate-emitter peak voltage
VGE
Short circuit ratings
tSC
VCC
Maximum Junction Temperature
Tj=Tjmax
Th=80°C
Tc=80°C
tp limited by Tjmax
Tj=Tjmax
Th=80°C
Tc=80°C
Tj≤125°C
VGE=15V
Tjmax
Input Boost FWD
Peak Repetitive Reverse Voltage
DC forward current
VRRM
Tj=25°C
IF
Tj=Tjmax
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation per Diode
Ptot
Tj=Tjmax
Maximum Junction Temperature
copyright by Vincotech
Tjmax
1
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Revision: 2
10-FZ06NBA110FP-M306L28
target datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
Input Boost MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
VDS
ID
IDpulse
600
V
Tj=Tjmax
Th=80°C
Tc=80°C
17
19
A
tp limited by Tjmax
Tc=25°C
112
A
Tj=Tjmax
Th=80°C
Tc=80°C
67
101
W
Power dissipation
Ptot
Gate-source peak voltage
Vgs
±20
V
Tjmax
150
°C
Storage temperature
Tstg
-40…+125
°C
Operation temperature under switching condition
Top
-40…+(Tjmax - 25)
°C
4000
V
Creepage distance
min 12,7
mm
Clearance
min 12,7
mm
Maximum Junction Temperature
Thermal Properties
Insulation Properties
Insulation voltage
copyright by Vincotech
Vis
t=2s
DC voltage
2
Revision: 2
10-FZ06NBA110FP-M306L28
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Unit
Tj
Min
Typ
Max
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
4.1
5.1
5.7
1.85
2.3
Input Boost IGBT *
Gate emitter threshold voltage
VGE(th)
VCE=VGE
Collector-emitter saturation voltage
VCE(sat)
15
Collector-emitter cut-off current incl. Diode
ICES
0
600
Gate-emitter leakage current
IGES
±20
0
Integrated Gate resistor
Rgint
tbd.
Ω
Input capacitance
Cies
5920
pF
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate charge
QGate
Thermal resistance chip to heatsink per chip
RthJH
f=1MHz
0.0008
100
0
40
100
V
uA
nA
232
Tj=25°C
25
V
pF
192
15
480
100
Tj=25°C
Thermal grease
thickness≤50um
λ = 1 W/mK
630
nC
0.72
K/W
* see dynamic characteristic at MosFET
Input Boost FWD
Diode forward voltage
Peak reverse recovery current
VF
IRRM
Reverse recovery time
trr
Reverse recovered charge
Qrr
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
48
Rgon=4 Ω **
350
15
77
di(rec)max
/dt
Erec
RthJH
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1.55
1.69
tbd.
1.75
A
tbd.
ns
tbd.
μC
tbd.
A/μs
tbd.
Thermal grease
thickness≤50um
λ = 1 W/mK
V
mWs
1.10
K/W
Input Boost MOSFET
Static drain to source ON resistance
Gate threshold voltage
Rds(on)
18.1
10
V(GS)th
VDS=VGS
0.00121
Gate to Source Leakage Current
Igss
20
0
Zero Gate Voltage Drain Current
Idss
0
600
Turn On Delay Time
Rise Time
Turn off delay time
Fall time
td(ON)
tr
td(OFF)
tf
Turn-on energy loss per pulse
Eon
Turn-off energy loss per pulse
Eoff
Total gate charge
Qg
Gate to source charge
Qgs
Gate to drain charge
Qgd
Input capacitance
Ciss
Output capacitance
Coss
Thermal resistance chip to heatsink per chip
RthJH
Rgon=1,7 Ω **
Rgoff=1,7 Ω **
77
2.5
90
230
3
99
3.5
100
5
mΩ
V
nA
uA
tbd.
tbd.
tbd.
ns
tbd.
tbd.
tbd.
mWs
119
480
10
18.1
Tj=25°C
14
nC
61
2660
f=1MHz
copyright by Vincotech
350
±13
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0
100
pF
Tj=25°C
154
Thermal grease
thickness≤50um
λ = 1 W/mK
1.05
3
K/W
Revision: 2
10-FZ06NBA110FP-M306L28
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Tj
Min
Typ
Unit
Max
IGBT gate capacitor
C value
C
4.7
nF
22000
1486
Ω
Ω
Thermistor
Rated resistance*
R25
R100
Tol. ±13%
Tol. ±5%
Tj=25°C
Tj=100°C
Deviation of R100
DR/R
R100=1503Ω
Tc=100°C
Power dissipation
P
B-value
copyright by Vincotech
B(25/100)
Tol. ±3%
4
+5
-5
%/K
Tj=25°C
200
mW
Tj=25°C
3950
K
Revision: 2
10-FZ06NBA110FP-M306L28
target datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
without thermal paste 12mm housing
Ordering Code
10-FZ06NBA110FP-M306L28
in DataMatrix as
M306L28
in packaging barcode as
M306L28
Outline
Pinout
copyright by Vincotech
5
Revision: 2
10-FZ06NBA110FP-M306L28
target datasheet
PRODUCT STATUS DEFINITIONS
Datasheet Status
Target
Preliminary
Final
Product Status
Definition
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in any
manner without notice. The data contained is exclusively
intended for technically trained staff.
First Production
This datasheet contains preliminary data, and
supplementary data may be published at a later date.
Vincotech reserves the right to make changes at any time
without notice in order to improve design. The data
contained is exclusively intended for technically trained
staff.
Full Production
This datasheet contains final specifications. Vincotech
reserves the right to make changes at any time without
notice in order to improve design. The data contained is
exclusively intended for technically trained staff.
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright by Vincotech
6
Revision: 2