10-FZ06NBA110FP-M306L28 target datasheet flowBoost0 600V/110A PS* Features flow0 12mm housing ● *PS: 2x 110A parallel switch (100A IGBT and 99mΩ MOSFET) ● high speed IGBT with C6 MOSFET and SiC buck diodes ● high efficiency dual booster ● ultra fast switching frequency ● low inductance layout Target Applications Schematic ● solar inverter ● UPS Types ● 10-FZ06NBA110FP-M306L28 Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 600 V 72 96 A 400 A 131 199 W ±20 V 5 400 μs V 175 °C 600 V 49 63 A 210 A 88 133 W 175 °C Input Boost IGBT Collector-emitter break down voltage DC collector current Repetitive peak collector current VCE IC ICpulse Power dissipation per IGBT Ptot Gate-emitter peak voltage VGE Short circuit ratings tSC VCC Maximum Junction Temperature Tj=Tjmax Th=80°C Tc=80°C tp limited by Tjmax Tj=Tjmax Th=80°C Tc=80°C Tj≤125°C VGE=15V Tjmax Input Boost FWD Peak Repetitive Reverse Voltage DC forward current VRRM Tj=25°C IF Tj=Tjmax Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature copyright by Vincotech Tjmax 1 Th=80°C Tc=80°C Th=80°C Tc=80°C Revision: 2 10-FZ06NBA110FP-M306L28 target datasheet Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit Input Boost MOSFET Drain to source breakdown voltage DC drain current Pulsed drain current VDS ID IDpulse 600 V Tj=Tjmax Th=80°C Tc=80°C 17 19 A tp limited by Tjmax Tc=25°C 112 A Tj=Tjmax Th=80°C Tc=80°C 67 101 W Power dissipation Ptot Gate-source peak voltage Vgs ±20 V Tjmax 150 °C Storage temperature Tstg -40…+125 °C Operation temperature under switching condition Top -40…+(Tjmax - 25) °C 4000 V Creepage distance min 12,7 mm Clearance min 12,7 mm Maximum Junction Temperature Thermal Properties Insulation Properties Insulation voltage copyright by Vincotech Vis t=2s DC voltage 2 Revision: 2 10-FZ06NBA110FP-M306L28 target datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Unit Tj Min Typ Max Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C 4.1 5.1 5.7 1.85 2.3 Input Boost IGBT * Gate emitter threshold voltage VGE(th) VCE=VGE Collector-emitter saturation voltage VCE(sat) 15 Collector-emitter cut-off current incl. Diode ICES 0 600 Gate-emitter leakage current IGES ±20 0 Integrated Gate resistor Rgint tbd. Ω Input capacitance Cies 5920 pF Output capacitance Coss Reverse transfer capacitance Crss Gate charge QGate Thermal resistance chip to heatsink per chip RthJH f=1MHz 0.0008 100 0 40 100 V uA nA 232 Tj=25°C 25 V pF 192 15 480 100 Tj=25°C Thermal grease thickness≤50um λ = 1 W/mK 630 nC 0.72 K/W * see dynamic characteristic at MosFET Input Boost FWD Diode forward voltage Peak reverse recovery current VF IRRM Reverse recovery time trr Reverse recovered charge Qrr Peak rate of fall of recovery current Reverse recovered energy Thermal resistance chip to heatsink per chip 48 Rgon=4 Ω ** 350 15 77 di(rec)max /dt Erec RthJH Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 1.55 1.69 tbd. 1.75 A tbd. ns tbd. μC tbd. A/μs tbd. Thermal grease thickness≤50um λ = 1 W/mK V mWs 1.10 K/W Input Boost MOSFET Static drain to source ON resistance Gate threshold voltage Rds(on) 18.1 10 V(GS)th VDS=VGS 0.00121 Gate to Source Leakage Current Igss 20 0 Zero Gate Voltage Drain Current Idss 0 600 Turn On Delay Time Rise Time Turn off delay time Fall time td(ON) tr td(OFF) tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Total gate charge Qg Gate to source charge Qgs Gate to drain charge Qgd Input capacitance Ciss Output capacitance Coss Thermal resistance chip to heatsink per chip RthJH Rgon=1,7 Ω ** Rgoff=1,7 Ω ** 77 2.5 90 230 3 99 3.5 100 5 mΩ V nA uA tbd. tbd. tbd. ns tbd. tbd. tbd. mWs 119 480 10 18.1 Tj=25°C 14 nC 61 2660 f=1MHz copyright by Vincotech 350 ±13 Tj=25°C Tj=150°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 0 100 pF Tj=25°C 154 Thermal grease thickness≤50um λ = 1 W/mK 1.05 3 K/W Revision: 2 10-FZ06NBA110FP-M306L28 target datasheet Characteristic Values Parameter Conditions Symbol VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] Value IC [A] or IF [A] or ID [A] Tj Min Typ Unit Max IGBT gate capacitor C value C 4.7 nF 22000 1486 Ω Ω Thermistor Rated resistance* R25 R100 Tol. ±13% Tol. ±5% Tj=25°C Tj=100°C Deviation of R100 DR/R R100=1503Ω Tc=100°C Power dissipation P B-value copyright by Vincotech B(25/100) Tol. ±3% 4 +5 -5 %/K Tj=25°C 200 mW Tj=25°C 3950 K Revision: 2 10-FZ06NBA110FP-M306L28 target datasheet Ordering Code and Marking - Outline - Pinout Ordering Code & Marking Version without thermal paste 12mm housing Ordering Code 10-FZ06NBA110FP-M306L28 in DataMatrix as M306L28 in packaging barcode as M306L28 Outline Pinout copyright by Vincotech 5 Revision: 2 10-FZ06NBA110FP-M306L28 target datasheet PRODUCT STATUS DEFINITIONS Datasheet Status Target Preliminary Final Product Status Definition Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. First Production This datasheet contains preliminary data, and supplementary data may be published at a later date. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Full Production This datasheet contains final specifications. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. DISCLAIMER The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright by Vincotech 6 Revision: 2