V23990-P760-A60-PM Maximum Ratings

V23990-P760-A60-PM
target datasheet
flow PIM 2
1200 V / 100 A
Features
flow 2 housing
● 3~rectifier,BRC,Inverter, NTC
● Very Compact housing, easy to route
● IGBT4/ EmCon4 technology for low saturation losses
and improved EMC behavior
Target Applications
Schematic
● Motor Drives
● Power Generation
Types
● V23990-P760-A60-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
1600
V
92
A
890
A
3960
A2s
128
W
Tjmax
150
°C
VCE
1200
V
97
A
tp limited by Tjmax
200
A
VCE ≤ 1200V, Tj ≤ Top max
200
A
220
W
±20
V
Tj≤150°C
10
µs
VGE=15V
850
V
175
°C
Input Rectifier Diode
Repetitive peak reverse voltage
VRRM
DC forward current
IFAV
Tj=Tjmax
Surge forward current
IFSM
50 Hz
Th=80°C
Tj=150°C
I2t-value
I2t
tp=10ms, sin 180°
Power dissipation
Ptot
Tj=Tjmax
Maximum Junction Temperature
Th=80°C
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Pulsed collector current
IC
ICpulse
Turn off safe operating area
Power dissipation
Ptot
Gate-emitter peak voltage
VGE
Short circuit ratings
tSC
VCC
Maximum Junction Temperature
copyright Vincotech
Tj=Tjmax
Tj=Tjmax
Tjmax
1
Th=80°C
Th=80°C
19 Dec 2014 / Revision 2
V23990-P760-A60-PM
target datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
1200
V
86
A
200
A
167
W
Tjmax
175
°C
VCE
1200
V
54
A
tp limited by Tjmax
100
A
VCE ≤ 1200V, Tj ≤ Top max
100
A
155
W
±20
V
10
850
µs
V
Tjmax
175
°C
VRRM
1200
V
16
A
20
A
69
W
Tjmax
175
°C
VRRM
1200
V
28
A
100
A
86
W
175
°C
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
Tj=Tjmax
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation
Ptot
Tj=Tjmax
Maximum Junction Temperature
Th=80°C
Th=80°C
Brake Transistor
Collector-emitter break down voltage
DC collector current
Pulsed collector current
IC
ICpuls
Turn off safe operating area
Power dissipation
Ptot
Gate-emitter peak voltage
VGE
Short circuit ratings
tSC
VCC
Maximum Junction Temperature
Tj=Tjmax
Tj=Tjmax
Th=80°C
Th=80°C
Tj≤150°C
VGE=15V
Brake Inverse Diode
Peak Repetitive Reverse Voltage
DC forward current
IF
Tj=Tjmax
Repetitive peak forward current
IFRM
tp limited by Tjmax
Brake Inverse Diode
Ptot
Tj=Tjmax
Maximum Junction Temperature
Th=80°C
Th=80°C
Brake Diode
Peak Repetitive Reverse Voltage
DC forward current
IF
Tj=Tjmax
Surge non-repetitive forward current
IFSM
tp=10ms, sin 180°
Power dissipation
Ptot
Tj=Tjmax
Maximum Junction Temperature
copyright Vincotech
Tjmax
2
Th=80°C
Th=80°C
19 Dec 2014 / Revision 2
V23990-P760-A60-PM
target datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
Thermal Properties
Storage temperature
Tstg
-40…+125
°C
Operation temperature under switching condition
Top
-40…+(Tjmax - 25)
°C
4000
V
Creepage distance
min 12,7
mm
Clearance
min 12,7
mm
Insulation Properties
Insulation voltage
Comparative tracking index
copyright Vincotech
Vis
t=2s
DC voltage
CTI
>200
3
19 Dec 2014 / Revision 2
V23990-P760-A60-PM
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Tj
Min
Unit
Typ
Max
1,17
1,15
0,86
0,72
5,08
7,12
1,5
Input Rectifier Diode
Forward voltage
VF
60
Threshold voltage (for power loss calc. only)
Vto
60
Slope resistance (for power loss calc. only)
rt
60
Reverse current
Ir
Thermal resistance chip to heatsink
1500
RthJH
Phase-Change
Material
ʎ=3,4W/mK
VGE(th)
VCE=VGE
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
V
mΩ
0,1
0,55
mA
K/W
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
VCE(sat)
IGES
Integrated Gate resistor
Rgint
Turn-on delay time
Rise time
Turn-off delay time
Fall time
0,01
100
0
1200
20
0
tr
td(off)
tf
Eon
Turn-off energy loss per pulse
Eoff
Input capacitance
Cies
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate charge
QGate
RthJH
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5,4
6
6,6
1,79
1,12
2,15
0,3
1000
Rgoff=6,5 Ω
Rgon=6,5 Ω
600
±15
100
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
tbd
tbd
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tbd
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tbd
tbd
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V
V
mA
nA
Ω
none
td(on)
Turn-on energy loss per pulse
Thermal resistance chip to heatsink
15
ICES
Gate-emitter leakage current
10
300
200
600
ns
300
mWs
10000
f=1MHz
0
10
Tj=25°C
2000
pF
160
±15
600
100
Tj=25°C
Phase-Change
Material
ʎ=3,4W/mK
210
nC
0,43
K/W
Inverter Diode
Diode forward voltage
Peak reverse recovery current
VF
IRRM
Reverse recovery time
trr
Reverse recovered charge
Qrr
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink
copyright Vincotech
100
Rgoff=6,5 Ω
±15
600
di(rec)max
/dt
Erec
RthJH
Phase-Change
Material
ʎ=3,4W/mK
100
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
2,50
2,00
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tbd
tbd
tbd
tbd
0,57
4
3,3
V
A
ns
µC
A/µs
mWs
K/W
19 Dec 2014 / Revision 2
V23990-P760-A60-PM
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Value
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
10
0,005
Unit
Tj
Min
Typ
Max
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5,4
6
6,6
1,79
2,12
2,15
Brake Transistor
Gate emitter threshold voltage
VGE(th)
VCE=VGE
Collector-emitter saturation voltage
VCE(sat)
15
Collector-emitter cut-off incl diode
ICES
0
1200
Gate-emitter leakage current
IGES
20
0
Integrated Gate resistor
Rgint
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
50
tf
Turn-on energy loss per pulse
Eon
Turn-off energy loss per pulse
Eoff
Input capacitance
Cies
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate charge
QGate
Thermal resistance chip to heatsink
RthJH
500
none
tr
td(off)
0,15
Rgoff=13 Ω
Rgon=13 Ω
±15
600
50
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
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V
V
mA
nA
Ω
300
200
600
ns
300
mWs
5000
f=1MHz
0
25
±15
600
Tj=25°C
1000
pF
80
50
Tj=25°C
Phase-Change
Material
ʎ=3,4W/mK
105
nC
0,61
K/W
Brake Inverse Diode
Diode forward voltage
Thermal resistance chip to heatsink
VF
RthJH
10
Tj=25°C
Tj=150°C
1,1
Phase-Change
Material
ʎ=3,4W/mK
1,80
1,76
2,1
1,38
V
K/W
Brake Diode
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
VF
Ir
trr
Reverse recovered charge
Qrr
Reverse recovery energy
Thermal resistance chip to heatsink
1200
IRRM
Reverse recovery time
Peak rate of fall of recovery current
25
Rgoff=13 Ω
±15
600
di(rec)max
/dt
Erec
RthJH
50
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
2,24
2,36
2,74
60
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
Phase-Change
Material
ʎ=3,4W/mK
V
µA
A
ns
µC
A/µs
mWs
1,10
K/W
21511
Ω
Thermistor
Rated resistance
R
Deviation of R100
∆R/R
Power dissipation
P
Tj=25°C
R100=1486 Ω
Tj=25°C
Power dissipation constant
-4,5
+4,5
%
Tj=25°C
210
mW
Tj=25°C
3,5
mW/K
B-value
B(25/50)
Tj=25°C
3884
K
B-value
B(25/100)
Tj=25°C
3964
K
Vincotech NTC Reference
copyright Vincotech
Tj=25°C
5
F
19 Dec 2014 / Revision 2
V23990-P760-A60-PM
target datasheet
Output Inverter
Output inverter IGBT
Figure 1
Typical output characteristics
IC = f(VCE)
Output inverter IGBT
Figure 2
Typical output characteristics
IC = f(VCE)
400
IC (A)
IC (A)
400
350
350
300
300
250
250
200
200
150
150
100
100
50
50
0
0
0
At
tp =
Tj =
VGE from
1
2
3
4
V CE (V)
5
0
At
tp =
Tj =
VGE from
250
µs
25
°C
7 V to 17 V in steps of 1 V
1
2
3
4
V CE (V)
5
250
µs
150
°C
7 V to 17 V in steps of 1 V
Output inverter IGBT
Figure 3
Typical transfer characteristics
IC = f(VGE)
IC (A)
100
80
60
40
20
Tj = 25°C
Tj = Tjmax-25°C
0
0
At
tp =
VCE =
2
250
10
copyright Vincotech
4
6
8
10
V GE (V)
12
µs
V
6
19 Dec 2014 / Revision 2
V23990-P760-A60-PM
target datasheet
Output Inverter
Output inverter IGBT
Figure 4
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
0
0
Zth-JH (K/W)
10
ZthJH (K/W)
10
Output inverter FWD
Figure 5
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
10-1
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
-2
10
10-5
10-4
At
D=
RthJH =
10-3
10-2
10-1
100
t p (s)
10110
10
-5
10
At
D=
RthJH =
tp / T
0,43
-2
K/W
-4
10
-3
R (K/W)
0,039
0,056
0,111
0,155
0,041
0,017
R (K/W)
0,038
0,080
0,164
0,214
0,048
0,029
Output inverter IGBT
-1
10
0
t p (s)
1
10 10
Tau (s)
4,7E+00
8,4E-01
1,4E-01
3,8E-02
9,7E-03
9,2E-04
Output inverter IGBT
Figure 7
Collector current as a
function of heatsink temperature
IC = f(Th)
175
IC (A)
Ptot (W)
500
10
K/W
FWD thermal model values
Phase change interface
Figure 6
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
-2
tp / T
0,57
IGBT thermal model values
Phase change interface
Tau (s)
4,6E+00
9,9E-01
1,8E-01
5,0E-02
1,3E-02
1,6E-03
10
150
400
125
300
100
75
200
50
100
25
0
0
0
At
Tj =
50
175
copyright Vincotech
100
150
T h ( o C)
0
200
At
Tj =
VGE =
°C
7
50
175
15
100
150
T h ( o C)
200
°C
V
19 Dec 2014 / Revision 2
V23990-P760-A60-PM
target datasheet
Output Inverter
Output inverter IGBT
Figure 8
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE)
Output inverter IGBT
Figure 9
Gate voltage vs Gate charge
VGE = f(QGE)
IC (A)
VGE (V)
103
20
18
10uS
16
102
14
100uS
12
10
10
1
1mS
8
10mS
6
100mS
100
DC
4
2
0
10-1
100
10
At
D=
Th =
VGE =
1
103
102
0
V CE (V)
At
IC =
VCC=
TJ =
single pulse
80
ºC
15
V
Tjmax
ºC
Tj =
50
100
103
100
600
25
150
200
250
Q g (nC)
300
A
V
°C
IGBT
Figure 12
Reverse bias safe operating area
IC = f(VCE)
IC (A)
250
IC MAX
Ic CHIP
200
MAX
VCE
Ic
MODULE
150
100
50
0
0
200
400
600
800
1000
1200
1400
V CE (V)
At
Tj =
Tjmax-25
Uccminus=Uccplus
ºC
Switching mode :
3 level switching
copyright Vincotech
8
19 Dec 2014 / Revision 2
V23990-P760-A60-PM
target datasheet
Brake
Brake IGBT
Figure 1
Typical output characteristics
IC = f(VCE)
Brake IGBT
Figure 2
Typical output characteristics
IC = f(VCE)
175
IC (A)
IC (A)
175
150
150
125
125
100
100
75
75
50
50
25
25
0
0
0
At
tp =
Tj =
VGE from
1
2
3
4
V CE (V)
5
0
At
tp =
Tj =
VGE from
250
µs
25
°C
7 V to 17 V in steps of 1 V
Brake IGBT
Figure 3
Typical transfer characteristics
IC = f(VGE)
1
2
3
4
5
250
µs
125
°C
7 V to 17 V in steps of 1 V
Brake FWD
Figure 4
Typical diode forward current as
a function of forward voltage
IF = f(VF)
100
IF (A)
IC (A)
50
V CE (V)
40
80
30
60
20
40
10
20
Tj = Tjmax-25°C
Tj = Tjmax-25°C
Tj = 25°C
Tj = 25°C
0
0
0
At
tp =
VCE =
2
250
10
copyright Vincotech
4
6
8
10
V GE (V)
12
0
At
tp =
µs
V
9
1
250
2
3
4
V F (V)
5
µs
19 Dec 2014 / Revision 2
V23990-P760-A60-PM
target datasheet
Brake
Brake IGBT
Figure 5
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
Brake FWD
Figure 6
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
ZthJH (K/W)
ZthJH (K/W)
101
100
100
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
10-2
10-2
10
-5
10
-4
10
-3
D=
At
Phase change interface
RthJH =
0,61
K/W
10
-2
10
-1
10
0
t p (s)
1
10-5
10 10
tp / T
10-4
10-3
D=
At
Phase change interface
RthJH =
1,10
K/W
Brake IGBT
Figure 7
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
10-2
10-1
100
101 10
tp / T
Brake IGBT
Figure 8
Collector current as a
function of heatsink temperature
IC = f(Th)
100
IC (A)
Ptot (W)
250
t p (s)
200
80
150
60
100
40
50
20
0
0
At
Tj =
50
175
copyright Vincotech
100
150
T h ( o C)
0
200
0
At
Tj =
VGE =
ºC
10
50
175
15
100
150
T h ( o C)
200
ºC
V
19 Dec 2014 / Revision 2
V23990-P760-A60-PM
target datasheet
Brake
Brake FWD
Figure 9
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Brake FWD
Figure 10
Forward current as a
function of heatsink temperature
IF = f(Th)
60
IF (A)
Ptot (W)
175
150
50
125
40
100
30
75
20
50
10
25
0
0
0
At
Tj =
50
175
copyright Vincotech
100
150
Th ( o C)
200
0
At
Tj =
ºC
11
50
175
100
150
Th ( o C)
200
ºC
19 Dec 2014 / Revision 2
V23990-P760-A60-PM
target datasheet
Brake Inverse Diode
Brake inverse diode
Figure 1
Typical diode forward current as
a function of forward voltage
IF = f(VF)
Brake inverse diode
Figure 2
Diode transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
IF (A)
ZthJC (K/W)
40
30
100
20
10
-1
10
-2
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10
Tj = Tjmax-25°C
Tj = 25°C
0
0
1
At
tp =
2
3
V F (V)
4
10-5
10-3
D=
At
Phase change interface
RthJH =
1,38
K/W
µs
250
10-4
Brake inverse diode
Figure 3
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
10-2
100
t p (s)
10110
tp / T
Brake inverse diode
Figure 4
Forward current as a
function of heatsink temperature
IF = f(Th)
40
Ptot (W)
IF (A)
140
10-1
35
120
30
100
25
80
20
60
15
40
10
20
5
0
0
0
At
Tj =
50
25
copyright Vincotech
100
150
T h ( o C)
0
200
At
Tj =
ºC
12
50
25
100
150
T h ( o C)
200
ºC
19 Dec 2014 / Revision 2
V23990-P760-A60-PM
target datasheet
Input Rectifier Bridge
Rectifier diode
Figure 1
Typical diode forward current as
a function of forward voltage
IF= f(VF)
Rectifier diode
Figure 2
Diode transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
250
1
IF (A)
ZthJC (K/W)
10
200
100
150
100
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
50
Tj = 25°C
Tj = Tjmax-25°C
0
0
0,5
1
1,5
2
2,5
V F (V)
10-2
3
10
At
tp =
10
At
D=
RthJH =
µs
250
-5
Rectifier diode
Figure 3
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
-4
10
-3
10
-2
10
10
0
t p (s)
1
10 10
tp / T
0,56
K/W
Rectifier diode
Figure 4
Forward current as a
function of heatsink temperature
IF = f(Th)
300
-1
Ptot (W)
IF (A)
175
150
250
125
200
100
150
75
100
50
50
25
0
0
0
At
Tj =
30
150
copyright Vincotech
60
90
120
T h ( o C)
150
0
At
Tj =
ºC
13
30
150
60
90
120
T h ( o C)
150
ºC
19 Dec 2014 / Revision 2
V23990-P760-A60-PM
target datasheet
Thermistor
Thermistor
Figure 1
Typical NTC characteristic
as a function of temperature
RT = f(T)
NTC-typical temperature characteristic
R (Ω)
24000
20000
16000
12000
8000
4000
0
25
copyright Vincotech
50
75
100
T (°C)
125
14
19 Dec 2014 / Revision 2
V23990-P760-A60-PM
target datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
without thermal paste 17mm housing
Ordering Code
V23990-P760-A60-PM
in DataMatrix as
P760-A60
in packaging barcode as
P760-A60
Outline
Pinout
copyright Vincotech
15
19 Dec 2014 / Revision 2
V23990-P760-A60-PM
target datasheet
PRODUCT STATUS DEFINITIONS
Datasheet Status
Target
Product Status
Definition
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in any
manner without notice. The data contained is exclusively
intended for technically trained staff.
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
16
19 Dec 2014 / Revision 2