US5L12 Transistors General purpose transistor (isolated transistor and diode) US5L12 A 2SD2675 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) (1) (5) 0.2 zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 1.7 0~0.1 0.17 ROHM :TUMT5 1.3 0.2 1pin mark 0.77 2.1 2.0 (2) 0.65 0.65 (3) 0.3 (4) 0.85Max. zApplications DC / DC converter Motor driver 0.15Max. Abbreviated symbol : L12 zStructure Silicon epitaxial planar transistor Schottky barrier diode zEquivalent circuit (5) (4) Di2 Tr1 (1) (2) (3) zPackaging specifications Type US5L12 Package TUMT5 Marking Code L12 Basic ordering unit(pieces) 3000 TR Rev.A 1/4 US5L12 Transistors zAbsolute maximum ratings (Ta=25°C) Tr1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC Collector current ICP Power dissipation Pc Junction temperature Tj Range of storage temperature Tstg Unit V V V A ∗1 A W/ELEMENT ∗2 °C °C Limits 30 30 6 1 2 0.7 150 −40 to +125 ∗1 Single pulse, Pw=1ms. ∗2 Mounted on a 25mm×25mm× t 0.8mm ceramic substrate Di2 Limits Parameter Symbol Peak reverse voltage 25 VRM Reverse voltage (DC) 20 VR Average rectified forward current 700 IF Forward current surge peak (60HZ, 1∞) IFSM 3 0.5 PD Power dissipation Junction temperature Tj 125 Range of storage temperature −40 to +125 Tstg Unit V V mA A W/ELEMENT °C °C ∗ ∗ Mounted on a 25mm×25mm× t 0.8mm ceramic substrate Tr1& Di2 Parameter Symbol Total power dissipation Limits 0.4 1.0 PD Unit W/TOTAL W/TOTAL ∗1 ∗2 ∗1 Each terminal mounted on a recommended land ∗2 Mounted on a 25mm×25mm× t 0.8mm ceramic substrate zElectrical characteristics (Ta=25°C) Tr1 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 30 30 6 − − − 270 − − Typ. − − − − − 120 − 320 7 Max. − − − 100 100 350 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=10µA IC=1mA IE=10µA VCB=30V VEB=6V IC=500mA, IB=25mA VCE=2V, IC=100mA ∗ VCE=2V, IE=100mA, f=100MHz VCB=10V, IE=0A, f=1MHz ∗ ∗ Pulsed Di2 Symbol Min. Typ. Max. Unit Forward voltage Reverse current Parameter VF IR − − 450 − 490 200 mV µA IF=700mA VR=20V Conditions Reverse recovery time trr − 9 − ns IF=IR=100mA, Irr=0.1IR Rev.A 2/4 US5L12 Transistors zElectrical characteristic curves Ta=Š40˚C 100 VCE=2V Pulsed 10 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current COLLECTOR CURRENT : IC (A) 1 VCE=2V Pulsed Ta=25˚C 0.1 Ta= 100˚C Ta=−40˚C 0.01 0.001 0 1.0 1.5 0.5 BASE TO EMITTER VOLTAGE : VBE (V) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Fig.4 Grounded emitter propagation characteristics =20/1 IC/IB=20 Pulsed VBE(sat) 1 Ta=Š40˚C Ta=25˚C Ta=100˚C Ta=100˚C 0.1 VCE(sat) Ta=25˚C Ta=Š40˚C 0.01 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=25˚C 10 10 Ta=25˚C VCE=2V 1 0.1 IC/IB=50/1 IC/IB=20/1 0.01 IC/IB=10/1 0.001 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current Fig.3 Collector-emitter saturation voltage vs. collector current 1000 1000 tstg SWITCHING TIME : (ns) DC CURRENT GAIN : hFE Ta=100˚C TRANSITION FREQUENCY : fT (MHz) 1000 BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Tr1 100 10 0.01 Fig.5 Gain bandwidth product vs. emitter current 100 tf tr 10 Ta=25˚C VCE=5V IC/IB=20/1 VCE=2V Ta=25˚C f=100MHz 0.1 EMITTER CURRENT : IE (A) tdon 1 1 0.01 0.1 COLLECTOR CURRENT : IC (A) 1 Fig.6 Switching time 100 Cib I =0A f 1MHz Ta=25˚C = Cob 10 1 0.01 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 3/4 US5L12 Transistors Di2 1000m REVERSE CURRENT : IR (A) 100m 1 ˚ 25 =1 Ta C =2 5˚ C 10m Ta =− 25 ˚C 100m Ta FORWARD CURRENT : IF (A) 10 1m Ta=125˚C 10m 1m 100µ Ta=25˚C 10µ Ta=−25˚C 1µ 0.1m 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1µ 0 10 20 30 40 50 60 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.8 Forward characteristics Fig.9 Reverse characteristics 70 Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1