ROHM RSB002N06

2.5V Drive Nch MOSFET
RSB002N06
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
VMN3
0.1
0.22
0.16
(3)
0.1
1.0
0.8
Features
1) High speed switing.
2) Ultra small package(VMN3).
3) Low voltage drive(2.5V drive).
 Packaging specifications
Package
Code
Basic ordering unit (pieces)
RSB002N06
Type
0.37
 Inner circuit
Taping
T2L
8000

 Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
Drain-source voltage
VDSS
Gate-source voltage
(3)
∗2
∗1
Limits
Unit
60
V
20
250
1
125
1
150
V
mA
A
mA
A
mW
Power dissipation
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Channel temperature
Range of storage temperature
Tch
Tstg
150
55 to +150
C
C
Symbol
Rth (ch-a)*
Limits
833
Unit
C / W
Source current
(Body Diode)
(2)
Abbreviated symbol : RK
 Application
Switching
Drain current
(1)
0.17
0.35
0.6
Continuous
Pulsed
Continuous
Pulsed
(1)
*1 ESD PROTECTION DIODE
*2 BODY DIODE
(2)
(1) GATE
(2) SOURCE
(3) DRAIN
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
 Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a recommended land.
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c 2010 ROHM Co., Ltd. All rights reserved.
○
1/5
2010.11 - Rev.A
RSB002N06
Data Sheet
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Typ.
Max.
Unit
Conditions
-
-
10
A
VGS=20V, VDS=0V
60
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
1
A
VDS=60V, VGS=0V
VGS (th)
1.0
-
2.5
V
-
1.7
2.4
-
2.1
3.0
-
2.3
3.2
-
3.0
12
l Yfs l*
0.25
-
-
S
ID=250mA, VDS=10V
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current
Min.
*
RDS (on)
VDS=10V, ID=1mA
ID=250mA, VGS=10V

ID=250mA, VGS=4.5V
ID=250mA, VGS=4.0V
ID=10mA, VGS=2.5V
Input capacitance
Ciss
-
15
-
pF
VDS=25V
Output capacitance
Coss
-
4.5
-
pF
VGS=0V
Reverse transfer capacitance
Crss
2.0
-
pF
f=1MHz
Turn-on delay time
td(on)*
-
3.5
-
ns
ID=100mA, VDD 30V
tr *
-
5
-
ns
VGS=10V
td(off)*
tf *
-
18
28
-
ns
ns
RL=300
RG=10
Rise time
Turn-off delay time
Fall time
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
-
-
1.2
Unit
V
Conditions
Is=250mA, VGS=0V
*Pulsed
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c 2010 ROHM Co., Ltd. All rights reserved.
○
2/5
2010.11 - Rev.A
RSB002N06
Data Sheet
Electrical characteristics curves
0.5
0.4
VGS= 10V
VGS= 4.5V
VGS= 4.0V
0.3
0.2
VGS= 2.8V
0.4
0.3
VGS= 2.8V
0.2
0.1
0.1
1
Ta= 25C
Pulsed
VGS= 10V
VGS= 4.5V
VGS= 4.0V
DRAIN CURRENT : ID[A]
Ta= 25C
Pulsed
DRAIN CURRENT : ID[A]
DRAIN CURRENT : ID[A]
0.5
VDS= 10V
Pulsed
0.1
Ta=125C
Ta=75C
Ta=25C
Ta= -25C
0.01
0.001
VGS= 2.5V
VGS= 2.5V
0.0001
0
0
0.2
0.4
0.6
0.8
0
1
DRAIN-SOURCE VOLTAGE : VDS[V]
VGS= 2.5V
VGS= 4.0V
VGS= 4.5V
VGS= 10V
10
1
0.1
0.001
0.01
0.1
1
4
6
8
VGS= 10V
Pulsed
Ta=125C
Ta=75C
Ta=25C
Ta= -25C
10
1
0.1
0.001
0.01
0.1
0.1
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( IV )
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c 2010 ROHM Co., Ltd. All rights reserved.
○
2.5
3
1
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( IV )
3/5
Ta=125C
Ta=75C
Ta=25C
Ta= -25C
1
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Ta=125C
Ta=75C
Ta=25C
Ta= -25C
10
VGS= 4.5V
Pulsed
10
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( III )
1
VGS= 2.5V
Pulsed
0.1
0.001
100
0.1
0.001
1
FORWARD TRANSFER
ADMITTANCE : |Yfs| [S]
1
2
Fig.3 Typical Transfer Characteristics
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( II )
10
1.5
Fig.2 Typical Output Characteristics( II )
100
100
1
GATE-SOURCE VOLTAGE : VGS[V]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( I )
Ta=125C
Ta=75C
Ta=25C
Ta= -25C
0.5
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-CURRENT : ID[A]
VGS= 4.0V
Pulsed
0
10
DRAIN-CURRENT : ID[A]
100
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[]
Ta= 25C
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[]
100
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[]
Fig.1 Typical Output Characteristics( I )
2
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[]
0
VDS= 10V
Pulsed
0.1
Ta= -25C
Ta=25C
Ta=75C
Ta=125C
0.01
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.9 Forward Transfer Admittance
vs. Drain Current
2010.11 - Rev.A
VGS=0V
Pulsed
0.1
Ta=125C
Ta=75C
Ta=25C
Ta=-25C
0.01
0.001
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : V SD [V]
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
CAPACITANCE : C [pF]
100
Ta=25C
f=1MHz
VGS=0V
8
1000
Ta=25C
Pulsed
SWITCHING TIME : t [ns]
1
Data Sheet
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[]
REVERSE DRAIN CURRENT : Is [A]
RSB002N06
6
ID= 0.01A
4
ID= 0.25A
2
0
td(off)
tf
Ta=25C
VDD= 30V
VGS=10V
RG=10
Pulsed
100
10
tr
td(on)
1
0
2.5
5
7.5
10
GATE-SOURCE VOLTAGE : VGS[V]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.12 Switching Characteristics
Ciss
10
Crss
Coss
1
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS [V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
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c 2010 ROHM Co., Ltd. All rights reserved.
○
4/5
2010.11 - Rev.A
RSB002N06
Data Sheet
 Measurement circuits
Pulse width
VGS
ID
VDS
RL
50%
10%
D.U.T.
RG
90%
50%
10%
VGS
VDS
VDD
90%
td(on)
tr
ton
Fig.1-1 Switching time measurement circuit
10%
90%
td(off)
tf
toff
Fig.1-2 Switching waveforms
 Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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c 2010 ROHM Co., Ltd. All rights reserved.
○
5/5
2010.11 - Rev.A
Notice
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R1010A