ROHM RUM002N02

1.2V Drive Nch MOSFET
RUM002N02
zDimensions (Unit : mm)
zStructure
Silicon N-channel
MOSFET
VMT3
zApplications
Switching
(1)Gate
zFeatures
1) Fast switching speed.
2) Low voltage drive (1.2V) makes this
device ideal for portable equipment.
3) Drive circuits can be simple.
(2)Souce
(3)Drain
Abbreviated symbol : QR
zInner circuit
(3)
zPackaging specifications
Package
Taping
(1)
Type
Code
T2L
Basic ordering unit
(pieces)
8000
∗2
∗1
RUM002N02
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
Limits
Unit
VDSS
20
V
VGSS
±8
V
ID
±200
mA
IDP∗1
±400
mA
PD∗2
150
mW
Continuous
Drain current
Pulsed
Total power dissipation
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
zThermal resistance
Parameter
Channel to ambient
Symbol
Limits
Unit
Rth(ch-a) ∗
833
°C / W
∗ Each terminal mounted on a recommended land
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1/4
2009.07 - Rev.A
RUM002N02
Data Sheet
zElectrical characteristics (Ta=25°C)
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Min.
Typ.
Max.
Unit
IGSS
−
−
±10
µA
VGS=±8V, VDS=0V
V(BR)DSS
20
−
−
V
ID=1mA, VGS=0V
IDSS
−
−
1.0
µA
VDS=20V, VGS=0V
VGS(th)
0.3
−
1.0
V
VDS=10V, ID=1mA
−
0.8
1.2
Ω
ID=200mA, VGS=2.5V
Symbol
Parameter
Static drain-source on-state
resistance
∗
RDS(on)
Forward transfer admittance
|Yfs| ∗
Input capacitance
Conditions
−
1.0
1.4
Ω
ID=200mA, VGS=1.8V
−
1.2
2.4
Ω
ID=40mA, VGS=1.5V
−
1.6
4.8
Ω
ID=20mA, VGS=1.2V
200
−
−
mS
VDS=10V, ID=200mA
Ciss
−
25
−
pF
VDS=10V
Output capacitance
Coss
−
10
−
pF
VGS=0V
Reverse transfer capacitance
Crss
−
10
−
pF
f=1MHz
Turn-on delay time
td(on) ∗
−
5
−
ns
VDD
tr ∗
−
10
−
ns
VGS=4.0V
td(off) ∗
tf ∗
−
15
−
ns
RL
−
10
−
ns
RG=10Ω
Rise time
Turn-off delay time
Fall time
10V, ID=150mA
67Ω
∗ Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD ∗
Min.
Typ.
Max.
−
−
1.2
Unit
V
Conditions
IS= 100mA, VGS=0V
∗ Pulsed
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2009.07 - Rev.A
RUM002N02
Data Sheet
zElectrical characteristics curves
VGS= 1.5V
0.3
VGS= 1.3V
0.2
VGS= 1.2V
0.4
VGS= 1.3V
0.3
VGS= 1.2V
0.2
VGS= 1.5V
0.1
0
Ta=25°C
Pulsed
0
0.2
0.4
0.6
0.8
1
0
2
DRAIN-SOURCE VOLTAGE : VDS[V]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VGS= 1.2V
VGS= 1.5V
VGS= 1.8V
VGS= 2.5V
VGS= 4.0V
1000
100
0.001
0.01
0.1
100
0.001
1
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
1.0
1.5
Fig.3 Typical transfer characteristics
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.01
0.1
VGS= 2.5V
Pulsed
100
0.001
1
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
0.01
DRAIN-CURRENT : ID [A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
DRAIN-CURRENT : ID [A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
3/4
1
DRAIN-CURRENT : ID [A]
10000
0.01
0.1
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
VGS= 1.5V
Pulsed
100
0.001
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
DRAIN-CURRENT : ID [A]
10000
0.1
0.5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
VGS= 1.8V
Pulsed
0.01
0.0001
0.00001
0.0
1000
DRAIN-CURRENT : ID [A]
100
0.001
Ta=125°C
75°C
25°C
−25°C
0.001
10
10000
VGS= 4.0V
Pulsed
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
10000
8
0.01
Fig.2 Typical Output Characteristics(Ⅱ)
10000
Ta= 25°C
Pulsed
6
0.1
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.1 Typical Output Characteristics(Ⅰ)
10000
4
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
0
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
0.1
VGS= 2.5V
VGS= 1.8V
DRAIN CURRENT : ID (A)
0.4
VGS= 4.5V
VGS= 2.5V
VGS= 1.8V
1 VDS=10V
Pulsed
0.5
Ta=25°C
Pulsed
DRAIN CURRENT : ID [A]
DRAIN CURRENT : ID [A]
0.5
1
VGS= 1.2V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
1
DRAIN-CURRENT : ID [A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)
2009.07 - Rev.A
RUM002N02
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.01
0.1
Ta=125°C
75°C
25°C
−25°C
0.1
0.01
0.0
1
2.5
VGS=0V
Pulsed
0.5
1
Ta=25°C
Pulsed
ID = 0.2A
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R DS(ON)[Ω]
SOURCE CURRENT : IS (A)
VDS= 10V
Pulsed
FORWARD TRANSFER
ADMITTANCE : |Yfs| [S]
1
Data Sheet
2
1.5
1
0.5
ID = 0.02A
0
1.5
0
2
4
6
8
10
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN-CURRENT : ID [A]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.11 Source current vs.
source-drain voltage
Fig.10 Forward Transfer Admittance
vs. Drain Current
100
Ta=25°C
VDD=10V
VGS=4V
RG=10Ω
Pulsed
CAPACITANCE : C [pF]
SWITHING TIME : t (ns)
1000
100
td(off)
tf
td(on)
10
Ciss
10
0.1
1
DRAIN CURRENT : ID (A)
Crss
Coss
tr
1
0.01
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1
Ta=25°C
f=1MHz
VGS=0V
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.13 Switching characteristics
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
zMeasurement circuit
Pulse width
VGS
ID
VDS
D.U.T.
RG
VGS
90%
50%
10%
RL
50%
10%
VDS
10%
VDD
90%
90%
td (on)
ton
Fig.1-1 Switching time measurement circuit
tr
tf
td (off)
toff
Fig.1-2 Switching waveforms
zNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit
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2009.07 - Rev.A
Notice
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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