1.2V Drive Nch MOSFET RUM002N02 zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET VMT3 zApplications Switching (1)Gate zFeatures 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. (2)Souce (3)Drain Abbreviated symbol : QR zInner circuit (3) zPackaging specifications Package Taping (1) Type Code T2L Basic ordering unit (pieces) 8000 ∗2 ∗1 RUM002N02 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Symbol Limits Unit VDSS 20 V VGSS ±8 V ID ±200 mA IDP∗1 ±400 mA PD∗2 150 mW Continuous Drain current Pulsed Total power dissipation Channel temperature Tch 150 °C Range of storage temperature Tstg −55 to +150 °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land zThermal resistance Parameter Channel to ambient Symbol Limits Unit Rth(ch-a) ∗ 833 °C / W ∗ Each terminal mounted on a recommended land www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.07 - Rev.A RUM002N02 Data Sheet zElectrical characteristics (Ta=25°C) Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Min. Typ. Max. Unit IGSS − − ±10 µA VGS=±8V, VDS=0V V(BR)DSS 20 − − V ID=1mA, VGS=0V IDSS − − 1.0 µA VDS=20V, VGS=0V VGS(th) 0.3 − 1.0 V VDS=10V, ID=1mA − 0.8 1.2 Ω ID=200mA, VGS=2.5V Symbol Parameter Static drain-source on-state resistance ∗ RDS(on) Forward transfer admittance |Yfs| ∗ Input capacitance Conditions − 1.0 1.4 Ω ID=200mA, VGS=1.8V − 1.2 2.4 Ω ID=40mA, VGS=1.5V − 1.6 4.8 Ω ID=20mA, VGS=1.2V 200 − − mS VDS=10V, ID=200mA Ciss − 25 − pF VDS=10V Output capacitance Coss − 10 − pF VGS=0V Reverse transfer capacitance Crss − 10 − pF f=1MHz Turn-on delay time td(on) ∗ − 5 − ns VDD tr ∗ − 10 − ns VGS=4.0V td(off) ∗ tf ∗ − 15 − ns RL − 10 − ns RG=10Ω Rise time Turn-off delay time Fall time 10V, ID=150mA 67Ω ∗ Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. − − 1.2 Unit V Conditions IS= 100mA, VGS=0V ∗ Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/4 2009.07 - Rev.A RUM002N02 Data Sheet zElectrical characteristics curves VGS= 1.5V 0.3 VGS= 1.3V 0.2 VGS= 1.2V 0.4 VGS= 1.3V 0.3 VGS= 1.2V 0.2 VGS= 1.5V 0.1 0 Ta=25°C Pulsed 0 0.2 0.4 0.6 0.8 1 0 2 DRAIN-SOURCE VOLTAGE : VDS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 1.2V VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.0V 1000 100 0.001 0.01 0.1 100 0.001 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1.0 1.5 Fig.3 Typical transfer characteristics Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.01 0.1 VGS= 2.5V Pulsed 100 0.001 1 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 0.01 DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 DRAIN-CURRENT : ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 3/4 1 DRAIN-CURRENT : ID [A] 10000 0.01 0.1 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) VGS= 1.5V Pulsed 100 0.001 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 DRAIN-CURRENT : ID [A] 10000 0.1 0.5 GATE-SOURCE VOLTAGE : VGS (V) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) VGS= 1.8V Pulsed 0.01 0.0001 0.00001 0.0 1000 DRAIN-CURRENT : ID [A] 100 0.001 Ta=125°C 75°C 25°C −25°C 0.001 10 10000 VGS= 4.0V Pulsed Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10000 8 0.01 Fig.2 Typical Output Characteristics(Ⅱ) 10000 Ta= 25°C Pulsed 6 0.1 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) 10000 4 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0.1 VGS= 2.5V VGS= 1.8V DRAIN CURRENT : ID (A) 0.4 VGS= 4.5V VGS= 2.5V VGS= 1.8V 1 VDS=10V Pulsed 0.5 Ta=25°C Pulsed DRAIN CURRENT : ID [A] DRAIN CURRENT : ID [A] 0.5 1 VGS= 1.2V Pulsed 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID [A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) 2009.07 - Rev.A RUM002N02 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.0 1 2.5 VGS=0V Pulsed 0.5 1 Ta=25°C Pulsed ID = 0.2A STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[Ω] SOURCE CURRENT : IS (A) VDS= 10V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1 Data Sheet 2 1.5 1 0.5 ID = 0.02A 0 1.5 0 2 4 6 8 10 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-CURRENT : ID [A] GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Source current vs. source-drain voltage Fig.10 Forward Transfer Admittance vs. Drain Current 100 Ta=25°C VDD=10V VGS=4V RG=10Ω Pulsed CAPACITANCE : C [pF] SWITHING TIME : t (ns) 1000 100 td(off) tf td(on) 10 Ciss 10 0.1 1 DRAIN CURRENT : ID (A) Crss Coss tr 1 0.01 Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1 Ta=25°C f=1MHz VGS=0V 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Switching characteristics Fig.14 Typical Capacitance vs. Drain-Source Voltage zMeasurement circuit Pulse width VGS ID VDS D.U.T. RG VGS 90% 50% 10% RL 50% 10% VDS 10% VDD 90% 90% td (on) ton Fig.1-1 Switching time measurement circuit tr tf td (off) toff Fig.1-2 Switching waveforms zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/4 2009.07 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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