CEP6086L/CEB6086L

CEP6086L/CEB6086L
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 72A, RDS(ON) = 10mΩ
@VGS = 10V.
RDS(ON) = 13.5mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
G
D
S
ABSOLUTE MAXIMUM RATINGS
Parameter
CEP SERIES
TO-220
S
Tc = 25 C unless otherwise notedz
Symbol
Limit
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
ID
Drain Current-Pulsed a
IDM
Maximum Power Dissipation @ TC = 25 C
PD
- Derate above 25 C
60
Units
V
±20
V
72
A
51
288
A
A
75
W
0.5
W/ C
Single Pulsed Avalanche Energy d
EAS
132
mJ
Single Pulsed Avalanche Current
IAS
23
A
TJ,Tstg
-55 to 175
C
Symbol
Limit
Units
d
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
RθJC
2
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 2. 2012.Jan
http://www.cetsemi.com
CEP6086L/CEB6086L
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
60
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 60V, VGS = 0V
1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
VGS(th)
RDS(on)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VGS = VDS, ID = 250µA
3
V
VGS = 10V, ID = 20A
8
10
mΩ
VGS = 4.5V, ID = 10A
10
13.5
mΩ
VDS = 25V, VGS = 0V,
f = 1.0 MHz
1
2815
pF
235
pF
165
pF
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 30V, ID = 20A,
VGS = 10V, RGEN = 4.7Ω
19
38
ns
10
20
ns
ns
75
150
Turn-Off Fall Time
tf
12
24
ns
Total Gate Charge
Qg
32
42
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 48V, ID = 20A,
VGS = 4.5V
7
nC
18
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = 20A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 0.5mH, IAS =23A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C
2
62.5
A
1.2
V
CEP6086L/CEB6086L
100
VGS=10,8,6V
32
ID, Drain Current (A)
ID, Drain Current (A)
40
24
16
8
80
60
40
25 C
20
TJ=125 C
VGS=3V
0
0
1
2
3
0
4
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
1800
1200
600
Coss
Crss
0
5
10
15
20
25
2.2
1.9
ID=20A
VGS=10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
8
Figure 2. Transfer Characteristics
Ciss
1.1
1.0
0.9
0.8
0.7
0.6
-50
6
Figure 1. Output Characteristics
2400
1.2
4
VGS, Gate-to-Source Voltage (V)
3000
1.3
2
VDS, Drain-to-Source Voltage (V)
3600
0
0
-55 C
-25
0
25
50
75
100
125
VGS=0V
10
2
10
1
10
0
0.6
150
0.8
1.0
1.2
1.4
1.6
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
5
10
VDS=48V
ID=20A
3
2
1
0
0
3
RDS(ON)Limit
4
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEP6086L/CEB6086L
8
16
24
32
10
10
10
40
2
10ms
100ms
1ms
DC
1
TC=25 C
TJ=175 C
Single Pulse
0
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
V IN
RL
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
10
0.2
0.1
-1
0.05
0.02
0.01
10
10
PDM
t1
Single Pulse
-2
-3
10
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
-5
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
0
10
1
2