RB201A60 Diodes Schottky barrier diode RB201A60 zApplications General rectification z External dimensions (Unit : mm) CATHODE BAND (BLUE) 3 φ0.6±0.1 ① ② zFeatures 1) Cylindrical mold type.(MSR) 2) Low VF. 3) High ESD. 3.0±0.2 29±1 29±1 φ2.5±0.2 ROHM : MSR ① zConstruction Silicon epitaxial planar ② Manufacture Date z Taping specifications (Unit : mm) IVORY H2 BLUE A H2 記号 Mark E Standard dimension 寸法規格値(mm) value (mm) T-31 52.4±1.5 T-32 26.0+0.4 -0 Ｂ 5.0±0.5 Ｃ 0.5ＭＡＸ Ｄ 0 Ｅ 50.4±0.4 Ｆ 0.3ＭＡＸ H1 6.0±0.5 H2 5.0±0.5 L1-L2 0.6ＭＡＸ ＊H1(6mm)：BROWN Ａ B C L2 L1 F H1 H1 D cf : cumulativ e pitch tolerance with 20 pitch than ±1.5mm 注) 累積ピッチの許容差は20ピッチで±1.5mm以下とする zAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak （t=100µs） Junction temperature Tj Storage temperature Tstg Limits 60 60 2 40 150 -55 to +150 Unit V V A A ℃ ℃ (*1) Mounted on epoxy board. 180°Half sine wave zElectrical characteristics (Ta=25°C) Parameter Symbol Forward voltage VF Min. - Typ. - Max. 0.58 Unit V Reverse current IR - - 100 µA Conditions IF=2.0A VR=60V Rev.A 1/3 RB201A60 Diodes zElectrical characteristic curves (Ta=25°C) 10000 100000 Ta=25℃ 100 Ta=-25℃ 10 1 0.1 1000 Ta=75℃ 100 10 Ta=25℃ 1 Ta=-25℃ 10 0.1 100 200 300 400 500 600 1 0 5 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 15 20 25 30 0 AVE:541.7mV 530 520 80 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 540 70 60 50 40 30 20 AVE:7.24uA 300 260 240 200 Ct DISPERSION MAP 100 30 RESERVE RECOVERY TIME:trr(ns) 1cyc 8.3ms 200 150 AVE:316.3pF 280 IR DISPERSION MAP Ifsm AVE:66.0A 100 50 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 90 15 10 5 AVE:9.5ns Ifsm 80 70 8.3ms 8.3ms 1cyc 60 50 40 30 20 10 0 0 0 1 trr DISPERSION MAP IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Mounted on epoxy board 10000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Ifsm t 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS IM=1mA 1000 100 100 3 IF=0.5A time(ms) Rth(j-a) td=300us 100 Rth(j-l) Rth(j-c) 10 1 0.001 FORWARD POWER DISSIPATION:Pf(W) 150 PEAK SURGE FORWARD CURRENT:IFSM(A) 30 320 220 VF DISPERSION MAP 250 25 Ta=25℃ f=1MHz VR=0V n=30pcs 340 0 300 20 360 10 510 15 380 Ta=25℃ VR=60V n=30pcs 90 REVERSE CURRENT:IR(uA) 550 10 400 100 Ta=25℃ IF=2A n=30pcs 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 560 FORWARD VOLTAGE:VF(mV) 100 0.01 0 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz f=1MHz Ta=125℃ PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(mA) Ta=150℃ REVERSE CURRENT:IR(uA) Ta=125℃ 1000 1000 Ta=150℃ 10000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ 2 Sin(θ＝180) D=1/2 DC 1 0 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 1 2 3 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.A 4 5 2/3 RB201A60 Diodes 5 5 1 0.7 0.6 DC 0.5 0.4 D=1/2 0.3 Sin(θ＝180) 0.2 4 0A 0V DC 3 4 Io t D=1/2 T VR D=t/T VR=30V Tj=150℃ 2 1 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.8 Io 0A 0V 0.9 t DC T 3 VR D=t/T VR=30V Tj=150℃ D=1/2 2 Sin(θ＝180) 1 Sin(θ＝180) 0.1 0 0 0 10 20 30 40 50 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 60 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 150 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 15 10 AVE:5.50kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1