ROHM RB225NS-40

Data Sheet
Schottky Barrier Diode
RB225NS-40
lApplications
General rectification
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
RB225
NS40
lFeatures
1)Cathode common dual type.(LPDS)
2)Low IR
①
lConstruction
Silicon epitaxial planer
lStructure
ROHM : LPDS
JEITA : TO263S
①
Manufacture Year, Week and Day
①
② ③
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings (Tc=25C)
Parameter
Limits
Symbol
VRM
Reverse voltage (repetitive)
40
VR
Reverse voltage (DC)
40
Average rectified forward current (*1)
30
Io
IFSM
Forward current surge peak (60Hz・1cyc) (*1)
100
Junction temperature
150
Tj
Storage temperature
-40 to +150
Tstg
(*1) 60Hz half sin wave, vesistive load at Tc=70°C. 1/2 Io per diode
lElectrical characteristics (Tj=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
Thermal resistance
Unit
V
V
A
A
C
C
Min.
Typ.
Max.
Unit
-
0.53
0.63
V
IF=15A
IR
-
0.08
mA
VR=40V
Rth (J-C)
-
-
0.5
2.00
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1/4
°C/W
Conditions
junction to case
2011.10 - Rev.A
Data Sheet
RB225NS-40
100
1000000
Ta=125°C
Ta=150°C
100000
REVERSE CURRENT:IR(mA)
FORWARD CURRENT:IF(A)
Ta=150°C
10
Ta=125°C
Ta=75°C
1
Ta=25°C
0.1
Ta=-25°C
10000
Ta=75°C
1000
Ta=25°C
100
10
Ta=-25°C
1
0.01
0.1
0
100
200
300
400
500
600
0
5
10
15
20
25
35
40
560
10000
FORWARD VOLTAGE:VF(mV)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
1000
100
Ta=25°C
IF=15A
n=30pcs
550
540
530
AVE:534.5mV
520
510
10
0
10
20
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
2550
1000
REVERSE CURRENT:IR(mA)
800
700
600
500
400
300
AVE:78.7mA
2530
2520
2510
2500
AVE:2515.6pF
2490
2480
200
2470
100
2460
0
2450
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Ta=25°C
f=1MHz
VR=0V
n=10pcs
2540
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25°C
VR=40V
n=30pcs
900
2/4
2011.10 - Rev.A
Data Sheet
RB225NS-40
300
50
REVERSE RECOVERY TIME:trr(ns)
250
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
45
1cyc
8.3ms
200
150
AVE:176.0A
100
50
40
35
AVE:27.4ns
30
25
20
15
10
5
0
0
IFSM DISPERSION MAP
trr DISPERSION MAP
1000
1000
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
8.3ms
1cyc.
100
10
IFSM
100
10
1
10
100
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
50
100
40
10
Rth(j-a)
Rth(j-c)
1
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
time
D=1/2
30
Sin(θ＝180)
20
DC
10
0.1
0.001
0
0.01
0.1
1
10
100
0
1000
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
10
20
30
40
50
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
3/4
2011.10 - Rev.A
10
50
8
40
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
Data Sheet
RB225NS-40
6
D=1/2
DC
4
Sin(θ＝180)
D.C.
D=1/2
30
Sin(θ＝180)
20
10
2
0A
Io
0V
VR
t
T
D=t/T
VR=20V
Tj=150°C
0
0
0
10
20
30
0
40
25
50
75
100
125
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
30
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
AVE:25.7kV
20
15
10
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.10 - Rev.A
Notice
Notes
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R1120A