ROHM R5205CND

10V Drive Nch MOSFET
R5205CND
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
CPT3
6.5
5.1
2.3
2.5
0.9
1.5
5.5
Features
1) Low resistance.
2) High speed switching.
0.75
(1)
(2)Drain
0.8Min.
0.65
0.9
(1)Gate
9.5
1.5
0.5
2.3
(2)
(3)
2.3
0.5
1.0
Abbreviated symbol : R5205C
(3)Source
 Application
Switching
 Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
R5205CND
 Inner circuit
Taping
TL
2500

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
VDSS
VGSS
∗2
∗1
Limits
Unit
525
30
V
V
5
20
5
A
A
A
20
2.5
1.6
40
A
A
mJ
W
Continuous
Pulsed
Continuous
ID
IDP
IS
*1
Pulsed
*2
Total power dissipation (Tc=25C)
ISP
IAS
EAS
PD
Channel temperature
Range of storage temperature
Tch
Tstg
150
-55 to +150
C
C
Symbol
Rth (ch-c)*
Limits
3.13
Unit
C / W
Drain current
Source current
(Body Diode)
Avalanche current
Avalanche energy
*2
*1
*3
*3
(1)
(1) Gate
(2) Drain
(3) Source
(2)
(3)
∗1 Body Diode
∗2 ESD Protection Diode
*1 Limited only by maximum temperature allowed.
*2 Pw10s Duty Cycle1%
*3 L 500H, VDD=50V, Rg=25 STARTING Tch=25C
 Thermal resistance
Parameter
Channel to case
* Limited only by maximum temperature allowed.
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1/5
2010.12 - Rev.A
R5205CND
Data Sheet
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
IGSS
-
-
10
A
VGS=25V, VDS=0V
Drain-source breakdown voltage V(BR)DSS
Conditions
525
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
100
A
VDS=525V, VGS=0V
Gate threshold voltage
VGS (th)
2.5
-
4.5
V
VDS=10V, ID=1mA
Static drain-source on-state
resistance
RDS (on)*
-
1.3
1.6

ID=2.5A, VGS=10V
l Yfs l*
1.5
2.5
-
S
VDS=10V, ID=2.5A
Zero gate voltage drain current
Forward atransfer admittance
Input capacitance
Ciss
-
320
-
pF
VDS=25V
Output capacitance
Coss
-
180
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
15
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
20
-
ns
VDD 250V, ID=2.5A
tr *
-
25
-
ns
VGS=10V
td(off) *
-
40
-
ns
RL=100
tf *
-
20
-
ns
RG=10
Total gate charge
Qg *
-
10.8
-
nC
VDD
Gate-source charge
Gate-drain charge
Qgs *
Qgd *
-
3.2
4.4
-
nC
nC
VGS=10V RL=50
RG=10
Rise time
Turn-off delay time
Fall time
250V, ID=5A
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward voltage
Symbol
VSD *
Min.
-
Typ.
-
Max.
1.5
Unit
V
Conditions
Is=5A, VGS=0V
*Pulsed
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c 2010 ROHM Co., Ltd. All rights reserved.
○
2/5
2010.12 - Rev.A
R5205CND
Data Sheet
Electrical characteristic curves

10
VDS = 10V
Pulsed
PW= 1ms
0.1
0.01
PW= 10ms
Tc = 25°C
Single Pulse
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
0.01
DC operation
0.001
0.1
1
10
100
1000
0
DRAIN-SOURCE VOLTAGE : VDS ( V )
10
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
0.01
0.01
4
5
6
7
5
Ta=25°C
Pulsed
4
3
ID= 5.0A
2
ID= 2.5A
1
4
3
2
1
0
-50
1
10
0
5
REVERSE DRAIN CURRENT : IDR (A)
1
Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C
0.01
0.001
0.001
0.01
0.1
1
10
10
DRAIN CURRENT : I D (A)
Fig.7 Forward Transfer Admittance
vs. Drain Current
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c 2010 ROHM Co., Ltd. All rights reserved.
○
10
150
4
3
ID= 5.0A
2
ID= 2.5A
1
0
-50
15
0
50
100
150
CHANNEL TEMPERATURE: Tch (°C)
Fig.6 Static Drain-Source On-State
Resistance vs. Channel
10000
VGS= 0V
Pulsed
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
0.5
1
1.5
Ciss
1000
100
Coss
10
1
0.01
0
100
VGS= 10V
Pulsed
Fig.5 Static Drain-Source On-State
Resistance vs. Gate Source
VDS = 10V
Pulsed
0.1
5
50
Fig.3 Gate Threshold Voltage
vs. Channel Temperature
GATE-SOURCE VOLTAGE : VGS (V)
DRAIN CURRENT : ID (A)
10
0
CHANNEL TEMPERATURE: Tch (°C)
0
0.1
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
FORWARD TRANSFER ADMITTANCE : |Yfs| (S)
3
VDS= 10V
ID= 1mA
Fig.2 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (Ω)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (Ω)
VGS= 10V
Pulsed
2
5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Maximum Safe Operating Aera
100
1
6
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (Ω)
1
Operation in this
area is limited by
RDS(ON)
CAPACITANCE : C (pF)
10
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
PW= 100us
GATE THRESHOLD VOLTAGE: VGS(th) (V)
100
Crss
Ta= 25°C
f= 1MHz
VGS= 0V
0.01
0.1
1
10
100
1000
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.8 Reverse Drain Current vs.
Sourse-Drain Voltage
Fig.9 Typical Capacitance vs.
Drain-Source Voltage
3/5
2010.12 - Rev.A
Ta= 25°C
VDD = 250V
ID= 5A
RG= 10
Pulsed
10
5
0
0
5
10
Ta= 25°C
VDD = 250V
VGS= 10V
RG= 10
Pulsed
tf
100
Ta= 25°C
di / dt= 100A / μs
VGS= 0V
Pulsed
10
0.1
15
TOTAL GATE CHARGE : Q g (nC)
1
10
100
REVERSE DRAIN CURRENT : I DR (A)
Fig.10 Dynamic Input Characteristics
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
10000
1000
Fig.11 Reverse Recovery Time
vs.Reverse Drain Current
SWITCHING TIME : t (ns)
GATE-SOURCE VOLTAGE : VGS (V)
15
Data Sheet
REVERSE RECOVERY TIME: trr (ns)
R5205CND
1000
td(off)
100
10
tr
td(on)
0.1
1
1
0.01
10
DRAIN CURRENT : I D (A)
Fig.12 Switching Characteristics
10
1
Ta = 25°C
Single Pulse : 1Unit
Rth (ch-a) (t) = ｒ(t) ×Rth (ch-a)
Rth (ch-a) = 133.2°C/W
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.13 Normalized Transient Thermal Resistance vs. Pulse Width
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4/5
2010.12 - Rev.A
R5205CND
Data Sheet
Measurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
90%
td(off)
tr
ton
tf
toff
Fig.1-2 Switching waveforms
Fig.1-1 Switching time measurement circuit
VG
VGS
ID
VDS
Qg
RL
VGS
D.U.T.
IG(Const.)
Qgs
Qgd
VDD
RG
Charge
Fig.2-1 Gate charge measurement circuit
VGS
IAS
Fig.2-2 Gate charge waveform
VDS
V(BR)DSS
D.U.T.
RG
L
VDD
IAS
VDD
EAS =
Fig.3-1 Avalanche Measurement circuit
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c 2010 ROHM Co., Ltd. All rights reserved.
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1
2
2
L IAS
V(BR)DSS
V(BR)DSS - VDD
Fig.3-2 Avalanche waveform
5/5
2010.12 - Rev.A
Notice
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R1010A