ROHM RSD100N10

Data Sheet
4V Drive Nch MOSFET
RSD100N10
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
CPT3
6.5
5.1
2.3
0.5
0.9
1.5
5.5
Features
1) Low on-resistance.
2) 4V drive.
3) High power package.
2.5
0.75
9.5
1.5
(SC-63)
<SOT-428>
(1)
(3)
(2)
0.8Min.
0.65
0.9 2.3
2.3
0.5
1.0
 Application
Switching
 Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSD100N10
 Inner circuit
Taping
TL
2500

∗1
∗2
(1) Gate
(2) Drain
(3) Source
 Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
Limits
VDSS
100
V
Gate-source voltage
VGSS
20
V
Source current
(Body Diode)
Continuous
ID
*3
10
A
Pulsed
Continuous
IDP
IS
*1
Pulsed
ISP
PD
20
10
20
A
A
A
Power dissipation
Channel temperature
Range of storage temperature
*3
*1
20
W
Tch
Tstg
150
55 to 150
C
C
Symbol
Limits
Unit
Rth (ch-c)*
6.25
C / W
*2
(2)
(3)
1 ESD PROTECTION DIODE
2 BODY DIODE
Unit
Drain-source voltage
Drain current
(1)
*1 PW 10s, Duty cycle1%
*2 TC=25°C
*3 Please use within the range of SOA.
 Thermal resistance
Parameter
Channel to Case
* T C=25°C
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1/6
2011.06 - Rev.A
Data Sheet
RSD100N10
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
IGSS
-
-
10
A
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current
Gate threshold voltage
Conditions
VGS=20V, VDS=0V
100
-
-
V
ID=1mA, V GS=0V
IDSS
-
-
1
A
VDS=100V, VGS=0V
VGS (th)
1
-
2.5
V
-
95
133
ID=5A, VGS=10V
-
100
140
m ID=5A, VGS=4.5V
VDS=10V, ID=1mA
Static drain-source on-state
resistance
RDS (on)*
-
105
147
Forward transfer admittance
l Yfs l *
4.5
-
-
S
VDS=10V, ID=5A
Input capacitance
Ciss
-
700
-
pF
VDS=25V
Output capacitance
Coss
-
65
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
40
-
pF
f=1MHz
Turn-on delay time
td(on) *
tr *
-
10
-
ns
VDD 50V, I D=5A
-
17
-
ns
VGS=10V
td(off) *
tf *
-
50
-
ns
RL=10
-
20
-
ns
RG=10
-
18
-
nC
VDD 50V, I D=10A
Gate-source charge
Qg *
Qgs *
Qgd *
2
4.5
-
nC
nC
VGS=10V
Gate-drain charge
-
Min.
Typ.
Max.
Unit
-
-
1.5
V
Rise time
Turn-off delay time
Fall time
Total gate charge
ID=5A, VGS=4V
*Pulsed
Body diode characteristics (Source-Drain)
Parameter
Forward Voltage
Symbol
VSD *
Conditions
Is=10A, VGS=0V
*Pulsed
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© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.06 - Rev.A
Data Sheet
RSD100N10
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ)
Fig.2 Typical Output Characteristics (Ⅱ)
10
10
Ta=25°C
pulsed
VGS=10.0V
8
VGS=10.0V
8
VGS=4.5V
VGS=4.5V
VGS=4.0V
VGS=4.0V
Drain Current : ID [A]
Drain Current : ID [A]
Ta=25°C
pulsed
VGS=2.8V
6
VGS=2.8V
4
VGS=2.5V
2
VGS=2.5V
6
4
2
VGS=2.0V
VGS=2.0V
0
0
0
0.2
0.4
0.6
0.8
1
0
2
Drain-Source Voltage : VDS [V]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
8
10
1000
VGS=10V
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Ta=25°C
pulsed
VGS=4.0V
VGS=4.5V
VGS=10V
100
10
0.01
0.1
1
10
100
10
0.01
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
1
10
100
Drain Current : ID [A]
Drain Current : ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
1000
1000
VGS=4.5V
pulsed
VGS=4V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
6
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
1000
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
4
Drain-Source Voltage : VDS [V]
100
10
0.01
0.1
1
10
0.1
1
10
100
Drain Current : ID [A]
Drain Current : ID [A]
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© 2011 ROHM Co., Ltd. All rights reserved.
100
10
0.01
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
3/6
2011.06 - Rev.A
Data Sheet
RSD100N10
Fig.7 Forward Transfer Admittance vs. Drain Current
Fig.8 Typical Transfer Characteristics
100
100
VDS=10V
pulsed
VDS=10V
pulsed
Drain Currnt : ID [A]
Forward Transfer Admittance
Yfs [S]
10
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
0.1
0.01
0.01
0.01
0.001
0.1
1
10
100
0.0
0.5
1.0
Drain Current : ID [A]
2.5
3.0
3.5
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
250
100
VGS=0V
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Ta=25°C
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
Source Current : Is [A]
2.0
Gate-Source Voltage : VGS [V]
Fig.9 Source Current vs. Source-Drain Voltage
1
0.1
200
ID=10A
ID=5A
150
100
50
0
0.01
0.0
0.5
1.0
1.5
0
2.0
2
4
6
8
10
Gate-Source Voltage : VGS [V]
Source-Drain Voltage : VSD [V]
Fig.11 Switching Characteristics
Fig.12 Dynamic Input Characteristics
10000
10
VDD≒50V
VGS=10V
RG=10Ω
Ta=25°C
Pulsed
tf
td(off)
100
Ta=25°C
VDD=50V
ID=10A
Pulsed
8
Gate-Source Voltage : VGS [V]
1000
Switching Time : t [ns]
1.5
td(on)
10
6
4
2
tr
1
0
0.01
0.1
1
10
100
0
Drain Current : ID [A]
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© 2011 ROHM Co., Ltd. All rights reserved.
2
4
6
8
10
12
14
16
18
20
Total Gate Charge : Qg [nC]
4/6
2011.06 - Rev.A
Data Sheet
RSD100N10
Fig.13 Typical Capacitance vs. Drain-Source Voltage
Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width
10000
10
Normalized Transient Thermal Resistance : r（t）
Capacitance : C [pF]
Ta=25°C
f=1MHz
VGS=0V
1000
Ciss
100
Coss
Crss
10
Ta=25°C
Single Pulse
1
0.1
0.01
Mounted on a recommended land.
(20mm × 20mm × 0.8mm)
0.001
Rth(ch-a)=111.7°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.0001
0.01
0.1
1
10
100
0.0001
1000
Drain-Source Voltage : VDS [V]
0.001
0.01
0.1
1
10
100
1000
Pulse width : Pw (s)
Fig.15 Maximum Safe Operating Area
100
Operation in this area is limited by RDS(on)
(VGS = 10V)
Drain Current : ID [ A ]
10
PW = 100μs
1
PW = 1ms
PW = 10ms
0.1
DC Operation
TC=25°C
Single Pulse
0.01
0.1
1
10
100
1000
Drain-Source Voltage : VDS [ V ]
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© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.06 - Rev.A
Data Sheet
RSD100N10
 Measurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
ton
Fig.1-1 Switching Time Measurement Circuit
90%
td(off)
tr
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
ID
VDS
RL
IG(Const.)
D.U.T.
Qg
VGS
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
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© 2011 ROHM Co., Ltd. All rights reserved.
Fig.2-2 Gate Charge Waveform
6/6
2011.06 - Rev.A
Notice
Notes
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R1120A