Data Sheet 10V Drive Nch MOSFET ZDX130N50 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 14.0 2.5 2.5 15.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Gate-source voltage V GSS guaranteed to be ±30V . 12.0 2.8 0.8 2.54 2.54 0.75 2.6 (1) (2) (2) (3) (3) (1) 4) High package power. Application Switching Packaging specifications Package Code Basic ordering unit (pieces) ZDX130N50 Type Inner circuit Bulk 500 ∗1 (1) (1) Gate (2) Drain (3) Source Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage Drain current Source current (Body Diode) VGSS Continuous ID Pulsed Continuous IDP IS *1 Pulsed ISP IAS *1 Avalanche current Avalanche energy *3 Limits Unit 500 30 V V 13 A 39 13 39 10 A A A A 50 40 mJ W Power dissipation EAS PD Channel temperature Range of storage temperature Tch Tstg 150 55 to 150 C C Symbol Rth (ch-c) Limits 3.125 Unit C / W *3 *2 (2) (3) 1 Body Diode *1 Pw10s, Duty cycle1% *2 Tc=25°C *3 L 1mH, VDD=50V, RG=25 Starting Tch=25°C Thermal resistance Parameter Channel to Case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.08- Rev.A Data Sheet ZDX130N50 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 100 nA Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Conditions VGS=30V, VDS=0V 500 - - V ID=1mA, V GS=0V IDSS - - 100 A VDS=500V, VGS=0V VGS (th) 2.5 - 4.5 V VDS=10V, ID=1mA RDS (on)* - 0.4 0.52 ID=6.5A, VGS=10V l Yfs l* 2.0 8.5 - S VDS=10V, ID=6.0A Input capacitance Ciss - 2180 - pF VDS=25V Output capacitance Coss - 200 - pF VGS=0V Reverse transfer capacitance Crss - 60 - pF f=1MHz Turn-on delay time td(on) * - 30 - ns VDD 250V, I D=5.0A tr * - 25 - ns VGS=10V td(off) * - 43 - ns RL=50, RG=10 Rise time Turn-off delay time Fall time tf * - 15 - ns Total gate charge Qg * - 40 - nC VDD 250V, I D=5.0A Gate-source charge Qgs * Qgd * - 11.5 12.5 - nC nC VGS=10V Typ. - Max. 1.7 Gate-drain charge *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Min. - Unit V Conditions Is=13A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.08 - Rev.A Data Sheet ZDX130N50 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) 2 20 Ta=25°C pulsed Ta=25°C pulsed VGS=10.0V VGS=8.0V 15 Drain Current : ID [A] Drain Current : ID [A] VGS=6.0V VGS=10.0V VGS=5.0V 1 VGS=8.0V 10 VGS=6.0V 5 VGS=5.0V 0 0 0 0.2 0.4 0.6 0.8 0 1 2 Drain-Source Voltage : VDS [V] 10 8 10 100 VGS=10V pulsed VDS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Forward Transfer Admittance Yfs [S] Static Drain-Source On-State Resistance RDS(on) [mW] 6 Fig.4 Forward Transfer Admittance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1 0.1 0.01 0.1 1 10 10 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.01 100 0.1 1 10 100 Drain Current : ID [A] Drain Current : ID [A] Fig.6 Source Current vs. Source-Drain Voltage Fig.5 Typical Transfer Characteristics 100 100 VDS=10V pulsed 10 VGS=0V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 10 Source Current : Is [A] Drain Currnt : ID [A] 4 Drain-Source Voltage : VDS [V] 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 0.001 0.01 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.0 Gate-Source Voltage : VGS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.5 1.0 1.5 Source-Drain Voltage : VSD [V] 3/5 2011.08 - Rev.A Data Sheet ZDX130N50 Fig.8 Switching Characteristics Fig.7 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1000 1.2 VDD≒250V VGS=10V RG=10W Ta=25°C Pulsed 1 tf ID=6.5A 0.8 Switching Time : t [ns] Static Drain-Source On-State Resistance RDS(on) [W] Ta=25°C pulsed ID=13.0A 0.6 0.4 100 td(off) td(on) 10 tr 0.2 1 0 0 2 4 6 8 0.1 10 1 Gate-Source Voltage : VGS [V] Fig.9 Dynamic Input Characteristics 100 Fig.10 Typical Capacitance vs. Drain-Source Voltage 100000 10 Ta=25°C VDD=250V ID=5.0A Pulsed Ta=25°C f=1MHz VGS=0V 10000 Capacitance : C [pF] 8 Gate-Source Voltage : VGS [V] 10 Drain Current : ID [A] 6 4 1000 Ciss 100 Coss 10 2 Crss 1 0 0 10 20 30 40 0.01 50 Total Gate Charge : Qg [nC] 0.1 1 10 100 1000 10000 Drain-Source Voltage : VDS [V] Fig.11 Maximum Safe Operating Area 100 Drain Current : ID [ A ] 10 PW = 100μs 1 PW = 1ms PW = 10ms 0.1 DC Operation Tc=25°C Single Pulse 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [ V ] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.08 - Rev.A Data Sheet ZDX130N50 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD RG Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 2 L IAS V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 5/5 2011.08 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A