Data Sheet 4V Drive Nch MOSFET RSJ10HN06 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) High power Package 4.5 2.54 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 (3) Application Switching Packaging specifications Inner circuit Package Type Code Basic ordering unit (pieces) RSJ10HN06 Taping TL 1000 ∗1 ∗2 (1) (1) Gate (2) Drain (3) Source (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit VDSS 60 20 V V 100 A 200 100 A A 200 100 A W Tch Tstg 150 55 to 150 C C Symbol Rth (ch-c)* Limits 1.25 Unit C / W Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) VGSS ID *3 Continuous Pulsed Continuous IDP IS *1 Pulsed ISP PD *1 Power dissipation Channel temperature Range of storage temperature *3 *2 *1 Pw10s, Duty cycle1% *2 TC=25C *3 Limited only by maximum channel temperature allowed. Thermal resistance Parameter Channel to Case * T C=25°C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.09 - Rev.A Data Sheet RSJ10HN06 Electrical characteristics (Ta = 25°C) Parameter Gate-source leakage Symbol Min. IGSS Drain-source breakdown voltage V(BR)DSS Typ. Max. Unit - - 10 A VGS=20V, VDS=0V 60 - - V ID=1mA, VGS=0V Conditions IDSS - - 1 A VDS=60V, VGS=0V Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA Static drain-source on-state resistance RDS (on)* - 3.0 4.2 - 3.5 4.9 Forward transfer admittance l Yfs l * 60 - - Input capacitance Ciss - 11000 - pF VDS=10V Output capacitance Coss - 2000 - pF VGS=0V Reverse transfer capacitance Crss - 1050 - pF f=1MHz Turn-on delay time td(on) * - 50 - ns VDD 30V, ID=50A tr * - 470 - ns VGS=10V td(off) * - 420 - ns RL=0.6 tf * - 710 - ns RG=10 Total gate charge Qg * - 202 - nC VDD 30V, ID=50A Gate-source charge Gate-drain charge Qgs * Qgd * - 35 42 - nC nC VGS=10V Min. Typ. Max. Unit - - 1.5 V Zero gate voltage drain current Rise time Turn-off delay time Fall time m S ID=50A, VGS=10V ID=50A, VGS=4V VDS=10V, ID=50A *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Conditions Is=100A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.09 - Rev.A Data Sheet RSJ10HN06 Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 50 50 VGS=10.0V VGS=4.5V VGS=4.0V 40 VGS=10.0V VGS=3.5V 30 Ta=25℃ pulsed VGS=3.0V Drain Current : ID [A] 40 Drain Current : ID [A] Ta=25°C Pulsed VGS=3.0V 20 VGS=4.5V VGS=4.0V 30 VGS=3.5V 20 VGS=2.5V 10 10 VGS=2.5V 0 0 0 0.2 0.4 0.6 0.8 1 0 4 8 10 Fig.3 Static Drain-Source On-State Resistance vs. Drain Current Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mW] Ta=25°C Pulsed VGS=4.0V VGS=10V 10 1 0.1 0.01 0.1 1 10 10 1 0.1 0.01 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 Drain Current : ID [A] 1 10 100 Drain Current : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 100 100 VGS=4.5V pulsed VGS=4V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Static Drain-Source On-State Resistance RDS(on) [mW] Static Drain-Source On-State Resistance RDS(on) [mW] 6 Drain-Source Voltage : VDS [V] 100 Static Drain-Source On-State Resistance RDS(on) [mW] 2 Drain-Source Voltage : VDS [V] 10 1 0.1 0.01 0.1 1 10 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10 1 0.1 0.01 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 1 10 100 Drain Current : ID [A] 3/6 2011.09 - Rev.A Data Sheet RSJ10HN06 Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics 100 1000 VDS=10V pulsed VDS=10V pulsed 10 Drain Currnt : ID [A] Forward Transfer Admittance Yfs [S] 100 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 0.1 0.01 0.01 0.001 0.1 1 10 100 0.0 1.0 2.0 2.5 3.0 3.5 Fig.9 Source Current vs. Source-Drain Voltage Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 20 VGS=0V pulsed Static Drain-Source On-State Resistance RDS(on) [mW] Ta=25°C Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 ID=50A 15 ID=100A 10 5 0 0.01 0.0 0.5 1.0 0 1.5 2 Source-Drain Voltage : VSD [V] 4 6 8 10 Gate-Source Voltage : VGS [V] Fig.12 Dynamic Input Characteristics Fig.11 Switching Characteristics 100000 10 VDD≒30V VGS=10V RG=10Ω Ta=25°C Pulsed tf td(off) 1000 100 Ta=25°C VDD=30V ID=50A Pulsed 8 Gate-Source Voltage : VGS [V] 10000 Switching Time : t [ns] 1.5 Gate-Source Voltage : VGS [V] 100 Source Current : Is [A] 0.5 Drain Current : ID [A] tr 6 4 2 td(on) 10 0 0.01 0.1 1 10 100 0 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 50 100 150 200 250 Total Gate Charge : Qg [nC] 4/6 2011.09 - Rev.A Data Sheet RSJ10HN06 Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width Fig.13 Typical Capacitance vs. Drain-Source Voltage 100000 10 Normalized Transient Thermal Resistance : r（t） Ta=25°C f=1MHz VGS=0V Capacitance : C [pF] Ciss 10000 Coss 1000 Crss 100 Ta=25°C Single Pulse 1 0.1 0.01 Mounted on epoxy board. (25mm × 28mm × 0.8mm) Rth(ch-a)=70.6°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.01 0.1 1 10 0.0001 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) Drain-Source Voltage : VDS [V] 5/6 2011.09 - Rev.A Data Sheet RSJ10HN06 Electrical characteristics (Ta = 25°C) Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL IG(Const.) D.U.T. Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Fig.2-2 Gate Charge Waveform 6/6 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A