2SD2391 Transistors Medium Power Transistor (60V, 2A) 2SD2391 zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40×40×0.7mm ceramic board). 4) Complements the 2SB1561. MPT3 0.5 4.5 1.6 2.5 4.0 1.5 (2) (3) 1.0 (1) 0.5 0.4 1.5 0.4 0.4 1.5 3.0 (1)Base (2)Collector (3)Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol Limits Unit VCBO VCEO 60 60 V V VEBO 6 2 6 V A A W IC Collector power dissipation PC 0.5 2 Junction temperature Storage temperature Tj 150 Tstg −55 to +150 ∗1 ∗2 °C °C + + ∗1 Single pulse, Pw=10ms ∗2 When mounted on a 40 40 0.7mm ceramic board. zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO 60 60 6 ICBO − − − − 0.1 V V V µA IC=50µA IC=1mA IE=50µA Collector cutoff current − − − − Emitter cutoff current Collector-emitter saturation voltage IEBO VCE(sat) − − − 0.13 0.1 0.35 VEB=5V IC/IB=1A/50mA hFE1 120 − 270 µA V − hFE2 45 − − − fT − − 210 21 − − MHz pF Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current transfer ratio Transition frequency Output capacitance Cob Conditions VCB=50V ∗ VCE/IC=−2V/−0.5A VCE/IC=−2V/−1.5A VCE=2V, IE=−0.5A, f=100MHz VCB=10V, IE=0A, f=1MHz ∗ ∗ Measured using pulse current Rev.A 1/3 2SD2391 Transistors zPackaging specifications and hFE Type 2SD2391 Package hFE Marking Code Basic ordering unit (pieces) MPT3 Q DT∗ T100 1000 ∗Denotes hFE z Electrical characteristic curves 8mA 1.2 6mA 0.8 4mA 0.4 2mA IB=0mA 1 0 2 3 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 0 Ta=25°C 4 5 0.2 0.4 0.6 0.8 1.0 1.2 Fig.2 Grounded emitter propagation characteristics 200 VCE=5V 100 2V 1V 50 20 10 5 2 1 10m 20m 50m 100m 200m 500m 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ΙΙ ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Fig.1 Grounded emitter output characteristics Ta=25°C 25°C 100 −40°C 50 20 10 5 1000 IC/IB=20 500 200 100 Ta=100°C 50 25°C −40°C 20 10 5 2 1 5m 10m 20m 50m 100m 200m 500m 1 1 10m 20m 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) 500 Ta=100°C 200 2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 1000 VCE=2V 500 DC CURRENT GAIN : hFE 10mA 1000 VCE=2V 2 2 5 COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage vs. collector current ( Ι ) 50m 100m 200m 500m 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.3 DC current gain vs. collector current ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 12mA 1.6 0.0 DC CURRENT GAIN : hFE 5 14mA 25°C −40°C mA 16mA 18 Ta=1 00°C COLLECTOR CURRENT : lC (A) mA 20 COLLECTOR CURRENT : IC (A) 2.0 1000 Ta=25°C 500 200 100 50 IC/IB=50 20 20 10 10 5 2 1 5m 10m 20m 50m100m 200m 500m 1 2 5 COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) Rev.A 2/3 2SD2391 200 100 5 2 1 −2m −10m −100m −1 EMITTER CURRENT : IE (A) Fig.7 Gain bandwidth product vs. emitter current −2 200 100 Cob 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.8 Iutput capacitance vs. voltage 50 20 10 Ic max(Pulse) PW 5 =1 0 2 1 0m s 500m 200m 100m DC 10 Cib ms =1 PW s 20 Ta=25°C f=1MHz IE=0A IC=0A 500 0m =1 50 1000 COLLECTOR CURRENT : lC (A) Ta=25°C VCE=2V 500 Pw TRANSITION FREQUENCY : fT (MHz) 1000 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Transistors 50m 20m Ta=25°C Single pulse 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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