Data Sheet 1.2V Drive Pch MOSFET RU1C002ZP Structure Silicon P-channel MOSFET Dimensions (Unit : mm) UMT3F 2.0 0.9 0.53 (1) 0.53 0.425 2.1 Features 1) Low on-resistance. 2) Low voltage drive(1.2V drive). (3) 1.25 0.425 0.32 (2) 0.13 0.65 0.65 1.3 Abbreviated symbol : YK Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) RU1C002ZP Inner circuit Taping TCL 3000 (3) ∗1 ∗2 (1) Gate (2) Source (3) Drain Absolute maximum ratings (Ta = 25C) Symbol Parameter Limits Unit 20 10 200 V V mA *1 800 100 mA mA ISP *1 PD *2 800 150 mA mW Tch Tstg 150 55 to 150 C C Symbol Rth (ch-a)* Limits 833 Unit C / W Drain-source voltage VDSS Gate-source voltage Continuous VGSS ID Pulsed Continuous IDP IS Pulsed Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature (1) (2) 1 BODY DIODE 2 ESD PROTECTION DIODE *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a reference land. Thermal resistance Parameter Channel to Ambient * Each terminal mounted on a reference land. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.09 - Rev.A Data Sheet RU1C002ZP Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Zero gate voltage drain current Static drain-source on-state resistance Typ. Max. Unit Conditions - - 10 A VGS=10V, VDS=0V 20 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=20V, VGS=0V VGS (th) 0.3 - 1.0 V VDS=10V, ID=100A - 0.8 1.2 - 1.0 1.5 - 1.3 2.2 IGSS Drain-source breakdown voltage V(BR)DSS Gate threshold voltage Min. RDS (on)* ID=200mA, VGS=4.5V ID=100mA, VGS=2.5V ID=100mA, VGS=1.8V - 1.6 3.5 ID=40mA, VGS=1.5V - 2.4 9.6 ID=10mA, VGS=1.2V l Yfs l * 0.2 - - S VDS=10V, ID=200mA Input capacitance Ciss - 115 - pF VDS=10V Output capacitance Coss - 10 - pF VGS=0V Reverse transfer capacitance Crss - 6 - pF f=1MHz Turn-on delay time td(on) * - 6 - ns VDD 10V, ID=100mA tr * - 4 - ns VGS=4.5V td(off) * - 17 - ns RL=100 tf * - 17 - ns RG=10 Forward transfer admittance Rise time Turn-off delay time Fall time Total gate charge Qg - 1.4 - nC VDD 10V, ID=200mA Gate-source charge Gate-drain charge Qgs Qgd - 0.3 0.3 - nC nC VGS=4.5V Min. Typ. Max. Unit - - 1.2 V *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Conditions Is=200mA, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.09 - Rev.A Data Sheet RU1C002ZP Electrical characteristic curves (Ta = 25°C) 0.15 VGS= -2.5V VGS= -2.0V VGS= -1.8V 0.1 VGS= -1.5V VGS= -2.5V VGS= -1.8V VGS= -1.5V 0.15 0.05 VGS= -1.2V 0.1 VGS= -1.0V VGS= -1.0V 0.6 0.8 1 0 2 DRAIN-SOURCE VOLTAGE : -VDS[V] 1000 VGS= -1.2V VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 100 0.001 0.01 0.1 VGS= -4.5V Pulsed 0.001 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 100 1 VGS= -2.5V Pulsed DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 100 1 0.001 0.01 0.1 1 DRAIN-CURRENT : -ID[A] 10000 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) 10000 VGS= -1.5V Pulsed 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 1.5 10000 DRAIN-CURRENT : -ID[A] 1000 1 GATE-SOURCE VOLTAGE : -VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.01 0.5 Fig.3 Typical Transfer Characteristics 100 1 10000 0.01 0 10 1000 DRAIN-CURRENT : -ID[A] 0.001 8 10000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) VGS= -1.8V Pulsed 6 Fig.2 Typical output characteristics( Ⅱ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=25°C Pulsed 0.001 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics( Ⅰ) 10000 4 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 0.4 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.01 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 0.2 0.1 0.0001 0 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VDS= -10V Pulsed 0.05 VGS= -1.2V 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1 Ta=25°C Pulsed VGS= -4.5V DRAIN CURRENT : -ID[A] VGS= -10.0V VGS= -4.5V VGS= -3.2V 0.2 Ta=25°C Pulsed DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] 0.2 VGS= -1.2V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 100 0.01 0.1 DRAIN-CURRENT : -ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) 3/5 0.001 0.01 0.1 DRAIN-CURRENT : -ID[A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current( Ⅵ) 2011.09 - Rev.A VDS= -10V Pulsed Ta=-25°C Ta=25°C Ta=75°C Ta=125°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[Ω] 1 REVERSE DRAIN CURRENT : -Is [A] VGS=0V Pulsed 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.1 0.01 0.1 0.5 1 GATE-SOURCE VOLTAGE : -VGS [V] Ta=25°C VDD= -10V VGS=-4.5V RG=10Ω Pulsed 10 tr td(on) 1 0.01 0.1 ID= -0.01A 2 1 1.5 0 2 1 DRAIN-CURRENT : -ID[A] Fig.13 Switching Characteristics www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4 3 Ta=25°C VDD= -10V ID= -0.2A RG=10Ω Pulsed 1 0.5 1 10 Ta=25°C f=1MHz VGS=0V Ciss 100 10 Crss 1 1.5 TOTAL GATE CHARGE : Qg [nC] Fig.14 Dynamic Input Characteristics 4/5 8 Coss 0 0 6 GATE-SOURCE VOLTAGE : -VGS[V] 1000 2 4 Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 5 tf ID= -0.2A 3 Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage 1000 100 Ta=25°C Pulsed 4 SOURCE-DRAIN VOLTAGE : -VSD [V] DRAIN-CURRENT : -ID[A] td(off) 5 0 0 1 CAPACITANCE : C [pF] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1.0 Fig.10 Forward Transfer Admittance vs. Drain Current SWITCHING TIME : t [ns] Data Sheet RU1C002ZP 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.15 Typical Capacitance vs. Drain-Source Voltage 2011.09 - Rev.A Data Sheet RU1C002ZP Measurement circuits Pulse width ID VDS VGS VGS 10% 50% 90% 50% RL 10% D.U.T. VDD RG VDS 90% td(on) 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit 10% tf toff Fig.1-2 Switching Waveforms VG ID VDS VGS RL IG(Const.) D.U.T. Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A