2N5954 2N5955 2N5956 PNP 2N6372 2N6373 2N6374 NPN

2N5954 2N5955 2N5956
2N6372 2N6373 2N6374
PNP
NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5954 and 2N6372
series devices are complementary silicon power
transistors manufactured by the epitaxial base process,
mounted in a hermetically sealed metal case designed
for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEV
VCER
VCEO
VEBO
IC
IB
PD
TJ, Tstg
JC
2N5954
2N6372
90
90
85
80
2N5955
2N6373
70
70
65
60
5.0
6.0
2.0
40
-65 to +200
4.3
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N5954
2N5955
2N6372
2N6373
SYMBOL TEST CONDITIONS
MIN MAX
MIN MAX
ICEV
VCE=85V, VBE=1.5V, RBE=100Ω
100
ICEV
VCE=65V, VBE=1.5V, RBE=100Ω
100
ICEV
VCE=45V, VBE=1.5V, RBE=100Ω
ICEV
VCE=85V, VBE=1.5V, RBE=100Ω, TC=150°C 2.0
ICEV
VCE=65V, VBE=1.5V, RBE=100Ω, TC=150°C 2.0
ICEV
VCE=45V, VBE=1.5V, RBE=100Ω, TC=150°C ICER
VCE=75V
100
ICER
VCE=55V
100
ICER
VCE=35V
ICEO
VCE=65V
1.0
ICEO
VCE=45V
1.0
ICEO
VCE=25V
IEBO
VBE=5.0V
0.1
0.1
BVCEV
IC=100mA, VBE=1.5V, RBE=100Ω
90
70
BVCER
IC=100mA, RBE=100Ω
85
65
BVCEO
IC=100mA
80
60
-
2N5956
2N6374
50
50
45
40
2N5956
2N6374
MIN MAX
100
50
45
40
2.0
100
1.0
0.1
-
UNITS
V
V
V
V
V
A
A
W
°C
°C/W
UNITS
μA
μA
μA
mA
mA
mA
μA
μA
μA
mA
mA
mA
mA
V
V
V
R2 (2-September 2014)
2N5954 2N5955 2N5956
2N6372 2N6373 2N6374
PNP
NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
2N5954
2N5955
2N6372
2N6373
SYMBOL TEST CONDITIONS
MIN MAX
MIN MAX
VCE(SAT) IC=2.0A, IB=200mA
1.0
VCE(SAT) IC=2.5A, IB=250mA
1.0
VCE(SAT) IC=3.0A, IB=300mA
VCE(SAT) IC=6.0A, IB=1.2A (PNP types)
2.0
2.0
VBE(ON) VCE=4.0V, IC=2.0A
2.0
VBE(ON) VCE=4.0V, IC=2.5A
2.0
VBE(ON) VCE=4.0V, IC=3.0A
VBE(ON) VCE=4.0V, IC=6.0A (NPN types)
3.0
3.0
hFE
VCE=4.0V, IC=2.0A
20 100
hFE
VCE=4.0V, IC=2.5A
20 100
hFE
VCE=4.0V, IC=3.0A
hFE
VCE=4.0V, IC=6.0A
5.0
5.0
hfe
VCE=4.0V, IC=0.5A, f=1.0kHz
25
25
fT
VCE=4.0V, IC=1.0A, f=1.0MHz (NPN types) 4.0
4.0
fT
VCE=4.0V, IC=1.0A, f=1.0MHz (PNP types) 5.0
5.0
-
2N5956
2N6374
MIN MAX
1.0
2.0
2.0
3.0
20 100
5.0
25
4.0
5.0
-
UNITS
V
V
V
V
V
V
V
V
MHz
MHz
TO-66 CASE - MECHANICAL OUTLINE
MARKING:
FULL PART NUMBER
R2 (2-September 2014)
w w w. c e n t r a l s e m i . c o m