2N5954 2N5955 2N5956 2N6372 2N6373 2N6374 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5954 and 2N6372 SERIES types are complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEV VCER VCEO VEBO IC IB PD TJ, Tstg ΘJC 2N5954 2N6372 90 90 85 80 2N5955 2N6373 70 70 65 60 5.0 6.0 2.0 40 -65 to +200 4.3 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N5954 2N5955 2N6372 2N6373 SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICEV VCE=85V, VBE=1.5V, RBE=100Ω 100 ICEV VCE=65V, VBE=1.5V, RBE=100Ω 100 ICEV VCE=45V, VBE=1.5V, RBE=100Ω ICEV VCE=85V, VBE=1.5V, RBE=100Ω, TC=150°C 2.0 ICEV VCE=65V, VBE=1.5V, RBE=100Ω, TC=150°C 2.0 ICEV VCE=45V, VBE=1.5V, RBE=100Ω, TC=150°C ICER ICER ICER ICEO ICEO ICEO IEBO BVCEV BVCER BVCEO VCE=75V VCE=55V VCE=35V VCE=65V VCE=45V VCE=25V VBE=5.0V IC=100mA, VBE=1.5V, RBE=100Ω IC=100mA, RBE=100Ω IC=100mA 90 85 80 100 1.0 0.1 - 70 65 60 100 1.0 0.1 - 2N5956 2N6374 50 50 45 40 2N5956 2N6374 MIN MAX 100 50 45 40 2.0 100 1.0 0.1 - UNITS V V V V V A A W °C °C/W UNITS μA μA μA mA mA mA μA μA μA mA mA mA mA V V V R1 (24-November 2010) 2N5954 2N5955 2N5956 2N6372 2N6373 2N6374 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) 2N5954 2N5955 2N5956 2N6372 2N6373 2N6374 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX VCE(SAT) IC=2.0A, IB=200mA 1.0 VCE(SAT) IC=2.5A, IB=250mA 1.0 VCE(SAT) IC=3.0A, IB=300mA 1.0 VCE(SAT) IC=6.0A, IB=1.2A (PNP types) 2.0 2.0 2.0 VBE(ON) VCE=4.0V, IC=2.0A 2.0 VBE(ON) VCE=4.0V, IC=2.5A 2.0 VBE(ON) VCE=4.0V, IC=3.0A 2.0 VBE(ON) VCE=4.0V, IC=6.0A (NPN types) 3.0 3.0 3.0 hFE VCE=4.0V, IC=2.0A 20 100 hFE hFE hFE hfe fT fT VCE=4.0V, IC=2.5A VCE=4.0V, IC=3.0A VCE=4.0V, IC=6.0A VCE=4.0V, IC=0.5A, f=1.0kHz VCE=4.0V, IC=1.0A, f=1.0MHz (NPN types) VCE=4.0V, IC=1.0A, f=1.0MHz (PNP types) 5.0 25 4.0 5.0 - 20 5.0 25 4.0 5.0 100 - 20 5.0 25 4.0 5.0 100 - UNITS V V V V V V V V MHz MHz TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R1 (24-November 2010) w w w. c e n t r a l s e m i . c o m