Si1917EDH New Product Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.370 @ VGS = –4.5 V –1.15 APPLICATIONS –12 0.575 @ VGS = –2.5 V –0.92 0.800 @ VGS = –1.8 V –0.78 D Load Switching D PA Switch D Level Switch D D SOT-363 SC-70 (6-LEADS) 1 6 D1 DB G1 2 5 G2 D2 3 4 S2 3 kW Marking Code XX 3 kW G G YY S1 Lot Traceability and Date Code Part # Code S Top View S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS –12 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C V –1.00 –1.15 ID TA = 85_C Pulsed Drain Current –0.83 –0.73 IDM Continuous Diode Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa Unit TA = 85_C Operating Junction and Storage Temperature Range PD A –3 –0.61 –0.47 0.73 0.57 0.38 0.30 TJ, Tstg W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 130 170 170 220 80 100 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71414 S-03174—Rev. A, 07-Mar-01 www.vishay.com 1 Si1917EDH New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = –100 mA –0.45 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VDS = 0 V, VGS = "4.5 V "1.5 mA VDS = 0 V, VGS = "12 V "10 mA VDS = –9.6 V, VGS = 0 V –1 VDS = –9.6 V, VGS = 0 V, TJ = 85_C –5 VDS = –5 V, VGS = –4.5 V rDS(on) V m mA –2 A VGS = –4.5 V, ID = –1.0 A 0.300 0.370 VGS = –2.5 V, ID = –0.81 A 0.470 0.575 VGS = –1.8 V, ID = –0.2 A 0.660 0.800 gfs VDS = –10 V, ID = –1.0 A 1.7 VSD IS = –0.47 A, VGS = 0 V –0.85 –1.2 1.3 2.0 VDS = –6 V, VGS = –4.5 V, ID = –1.0 A 0.31 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs nC Gate-Drain Charge Qgd 0.31 Turn-On Delay Time td(on) 0.17 0.26 tr 0.47 0.71 0.96 1.4 1.0 1.5 Rise Time Turn-Off Delay Time td(off) Fall Time VDD = –6 V, RL = 12 W ID ^ –0.5 A, VGEN = –4.5 V, RG = 6 W tf m ms Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 10 10,000 I GSS – Gate Current (mA) I GSS – Gate Current (mA) 1,000 8 6 4 100 TJ = 150_C 10 1 0.1 TJ = 25_C 2 0.01 0 0.001 0 4 8 12 VGS – Gate-to-Source Voltage (V) www.vishay.com 2 16 0 3 6 9 12 15 VGS – Gate-to-Source Voltage (V) Document Number: 71414 S-03174—Rev. A, 07-Mar-01 Si1917EDH New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 3.0 3.0 VGS = 5 thru 3 V TC = –55_C 2.5 2.5 V I D – Drain Current (A) I D – Drain Current (A) 2.5 2.0 1.5 2V 1.0 1.5 V 0.5 1 2 3 2.0 125_C 1.5 1.0 0.5 0.0 0 25_C 0.0 0.0 4 0.5 VDS – Drain-to-Source Voltage (V) 1.0 1.5 On-Resistance vs. Drain Current C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 160 VGS = 2.5 V 0.6 VGS = 4.5 V Ciss 120 80 Coss 0.3 Crss 40 0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) Gate Charge On-Resistance vs. Junction Temperature 5 1.6 VDS = 6 V ID = –1.0 A r DS(on) – On-Resistance (W) (Normalized) V GS – Gate-to-Source Voltage (V) 3.5 Capacitance VGS = 1.8 V 3 2 1 0 0.0 3.0 200 0.9 4 2.5 VGS – Gate-to-Source Voltage (V) 1.2 0.0 0.0 2.0 0.2 0.4 0.6 0.8 1.0 Qg – Total Gate Charge (nC) Document Number: 71414 S-03174—Rev. A, 07-Mar-01 1.2 1.4 1.4 VGS = 4.5 V ID = –1.0 A 1.2 1.0 0.8 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 3 Si1917EDH New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.0 3 r DS(on) – On-Resistance ( W ) I S – Source Current (A) TJ = 150_C 1 TJ = 25_C 1.6 1.2 ID = –1.0 A 0.8 0.4 0.0 0.1 0 0.4 0.2 0.6 0.8 1.0 0 1.2 VSD – Source-to-Drain Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.3 5 ID = 100 mA 0.2 4 0.1 3 Power (W) V GS(th) Variance (V) 1 0.0 2 1 –0.1 –0.2 –50 –25 0 25 50 75 100 125 150 0 0.01 0.1 1 10 100 600 Time (sec) TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 170_C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71414 S-03174—Rev. A, 07-Mar-01 Si1917EDH New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 Document Number: 71414 S-03174—Rev. A, 07-Mar-01 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1