Si4431DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) –30 30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "5.8 0.070 @ VGS = –4.5 V "4.5 D TrenchFETr Power MOSFET D 100% UIS Tested S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4431DY-T1 P-Channel MOSFET Si4431DY-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS –30 Gate-Source Voltage VGS "20 TA = 70_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current L=0 0.1 1 mH Single-Pulse Avalanche Energy ID TA = 70_C Operating Junction and Storage Temperature Range "4.6 IDM "30 IS –2.3 IAS 20 EAS TA = 25_C Maximum Power Dissipationa V "5.8 TA = 25_C Continuous Drain Current (TJ = 150_C)a Unit 20 A mJ 2.5 PD 1.6 W TJ, Tstg –55 to 150 _C Symbol Limit Unit RthJA 50 _C/W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.siliconix.com/www/product/spice.htm Document Number: 70151 S-51455—Rev. D, 01-Aug-05 www.vishay.com 1 Si4431DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter TypA Symbol Test Condition Min Max VGS(th) VDS = VGS, ID = –250 mA –1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = –30 V, VGS = 0 V –1 VDS = –30 V, VGS = 0 V, TJ = 70_C –25 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On State Drain Currentb On-State ID(on) D( ) Drain Source On Drain-Source On-State State Resistanceb Forward Transconductanceb Diode Forward Voltageb VDS v –5 V, VGS = –10 V –30 VDS v –5 V, VGS = –4.5 V –7 V mA A VGS = –10 V, ID = –5.3 A 0.029 0.040 VGS = –4.5 V, ID = –2.0 A 0.047 0.070 gfs VDS = –15 V, ID = –5.3 A 9.3 VSD IS = –2.3 A, VGS = 0 V –0.78 –1.2 22 35 rDS(on) DS( ) nA W S V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = –15 V, VGS = –10 V, ID = –5.3 A 3.95 nC 3.5 Rg 4.5 6.1 td(on) 11.5 20 12 20 38 55 15 25 50 80 tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = –15 15 V, RL = 15 W ID ^ –1 A, VGEN = –10 V, RG = 6 W IF = –2.3 A, di/dt = 100 A/ms W ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2 Document Number: 70151 S-51455—Rev. D, 01-Aug-05 Si4431DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED) Output Characteristics Transfer Characteristics 30 30 25_C VGS = 10, 9, 8, 7, 6, 5 V TC = –55_C 24 I D – Drain Current (A) I D – Drain Current (A) 24 18 4V 12 6 125_C 18 12 6 3V 0 0 0 2 4 6 8 10 0 2 VDS – Drain-to-Source Voltage (V) 8 Capacitance 2000 0.16 1600 C – Capacitance (pF) r DS(on)– On-Resistance ( W ) On-Resistance vs. Drain Current 0.12 0.08 VGS = 4.5 V VGS = 10 V Ciss 1200 800 Coss Crss 400 0.00 0 0 6 12 18 24 30 0 6 12 18 24 30 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) Gate Charge On-Resistance vs. Junction Temperature 10 2.0 VDS = 15 V ID = 5.3 A 8 1.6 rDS(on) – On-Resistance (Normalized) V GS – Gate-to-Source Voltage (V) 6 VGS – Gate-to-Source Voltage (V) 0.20 0.04 4 6 4 2 0 0 5 10 15 Qg – Total Gate Charge (nC) Document Number: 70151 S-51455—Rev. D, 01-Aug-05 20 25 VGS = 10 V ID = 5.3 A 1.2 0.8 0.4 0.0 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 3 Si4431DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on)– On-Resistance ( W ) I S – Source Current (A) 30 10 TJ = 150_C TJ = 25_C 0.08 0.06 ID = 5.3 A 0.04 0.02 0.00 1 0 0.2 0.4 0.6 0.8 1.0 0 1.4 1.2 VSD – Source-to-Drain Voltage (V) 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 50 1.0 0.8 ID = 250 mA 40 0.4 Power (W) VGS(th) Variance (V) 0.6 0.2 –0.0 30 20 –0.2 10 –0.4 –0.6 –50 –25 0 25 50 75 100 125 0 0.01 150 0.10 1.00 TJ – Temperature (_C) 10.00 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 50_C/W 0.02 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 70151 S-51455—Rev. D, 01-Aug-05 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1