3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0819-0200 (Previous ADE-208-600) Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4 Note: Marking is “YB–“. Rev.2.00 Aug 10, 2005 page 1 of 7 1. Source 2. Gate1 3. Gate2 4. Drain 3SK318 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 ±6 ±6 20 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 ±6 ±6 Typ — — — Max — — — Unit V V V Test conditions ID = 200 µA, VG1S = VG2S = 0 IG1 = ±10 µA, VG2S = VDS = 0 IG2 = ±10 µA, VG1S = VDS = 0 IG1SS — — ±100 nA VG1S = ±5 V, VG2S = VDS = 0 Gate2 to source cutoff current Gate1 to source cutoff voltage IG2SS VG1S(off) — 0.5 — 0.7 ±100 1.0 nA V VG2S = ±5 V, VG1S = VDS = 0 Gate2 to source cutoff voltage VG2S(off) 0.5 0.7 1.0 V IDS(op) 0.5 4 10 mA VDS = 3.5 V, VG1S = 1.1 V VG2S = 3 V |yfs| 18 24 32 mS Ciss Coss Crss PG NF 1.3 0.9 — 18 — 1.6 1.2 0.019 21 1.4 1.9 1.5 0.03 — 2.2 pF pF pF dB dB VDS = 3.5 V, VG2S = 3 V ID = 10 mA , f = 1 kHz VDS = 3.5 V, VG2S = 3 V ID = 10 mA , f= 1 MHz Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Rev.2.00 Aug 10, 2005 page 2 of 7 VDS = 5 V, VG2S = 3 V ID = 100µA VDS = 5 V, VG1S = 3 V ID = 100 µA VDS = 3.5 V, VG2S = 3 V ID = 10 mA , f = 900 MHz 3SK318 20 200 VG1S = 1.7 V Drain Current ID (mA) 100 50 1.5 V 12 1.4 V 1.3 V 8 1.2 V 1.1 V 4 1.0 V 0.9 V 0 50 100 150 0 200 2 Drain Current vs. Gate1 to Source Voltage Drain Current vs. Gate2 to Source Voltage 20 VDS = 3.5 V 2.5 V 2.0 V 1.5 V 8 4 16 VDS = 3.5 V 1 2 3 4 1.8 V 1.6 V 1.4 V 8 1.2 V 4 0 5 VG1S = 1.0 V 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) Forward Transfer Admittance vs. Gate1 Voltage VDS = 3.5 V 10 2.0 V 12 Gate1 to Source Voltage VG1S (V) Power Gain vs. Drain Current 25 VG2S = 3 V 20 Power Gain PG (dB) 24 2.5 V 18 12 2V 1.5 V 6 15 10 VDS = 3.5 V VG2S = 3 V f = 900 MHz 5 1V 0 8 Drain to Source Voltage VDS (V) 12 30 6 Ambient Temperature Ta (°C) 16 0 0.8 V 4 VG2S = 1.0 V Forward Transfer Admittance |yfS| (mS) VG2S = 3 V 1.6 V 16 150 20 Drain Current ID (mA) Typical Output Characteristics Drain Current ID (mA) Channel Power Dissipation Pch (mW) Maximum Channel Power Dissipation Curve 0.4 0.8 1.2 1.6 2.0 Gate1 to Source Voltage VG1S (V) Rev.2.00 Aug 10, 2005 page 3 of 7 0 5 10 15 20 Drain Current ID (mA) 25 3SK318 Noise Figure vs. Drain Current Power Gain vs. Drain to Source Voltage 25 VDS = 3.5 V VG2S = 3 V f = 900 MHz 4 Power Gain PG (dB) Noise Figure NF (dB) 5 3 2 1 0 5 10 15 20 20 15 10 0 25 Noise Figure vs. Drain to Source Voltage 4 20 Power Gain PG (dB) Noise Figure NF (dB) 6 8 10 25 VG2S = 3 V ID = 10 mA f = 900 MHz 3 2 1 2 4 6 8 10 Drain to Source Voltage VDS (V) 5 VDS = 3.5 V f = 900MHz 4 3 2 1 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) Rev.2.00 Aug 10, 2005 page 4 of 7 VDS = 3.5 V f = 900MHz 15 10 5 0 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) Noise Figure vs. Gate2 to Source Voltage Noise Figure NF (dB) 4 Power Gain vs. Gate2 to Source Voltage 5 0 2 Drain to Source Voltage VDS (V) Drain Current ID (mA) 0 VG2S = 3 V ID = 10 mA f = 900 MHz 5 3SK318 S11 Parameter vs. Frequency .8 1 S21 Parameter vs. Frequency 90° 1.5 .6 Scale: 1 / div. 60° 120° 2 .4 3 4 5 .2 30° 150° 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –3 –.4 –30° –150° –2 –.6 –.8 –1 –90° Test Condition : VDS = 3.5 V , VG2S = 3 V ID = 10mA 50 to 1000 MHz (50 MHz step) Test Condition : VDS = 3.5 V , VG2S = 3 V ID = 10mA 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° S22 Parameter vs. Frequency Scale: 0.002 / div. .8 60° 120° –60° –120° –1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Test Condition : VDS = 3.5 V , VG2S = 3 V ID = 10mA 50 to 1000 MHz (50 MHz step) Rev.2.00 Aug 10, 2005 page 5 of 7 –2 –.6 –.8 –1 –1.5 Test Condition : VDS = 3.5 V , VG2S = 3 V ID = 10mA 50 to 1000 MHz (50 MHz step) 3SK318 S Parameter (VDS = 3.5V, VG2S = 3V, ID = 10mA, Zo = 50Ω) Freq. (MHz) S11 S21 S12 S22 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 MAG. 1.000 0.998 0.997 0.994 0.994 0.986 0.978 0.972 0.969 0.954 0.955 0.941 0.932 0.924 0.919 0.905 ANG. –2.8 –5.8 –9.1 –12.2 –15.1 –18.5 –21.3 –24.1 –27.0 –29.7 –32.8 –35.7 –38.3 –41.3 –44.1 –46.9 MAG. 2.41 2.41 2.39 2.38 2.37 2.35 2.30 2.28 2.26 2.23 2.19 2.17 2.14 2.09 2.07 2.03 ANG. 176.3 171.9 167.6 163.7 159.8 155.5 151.4 147.6 143.6 140.0 135.9 132.2 128.6 125.0 121.5 117.9 MAG. 0.00068 0.00176 0.00223 0.00303 0.00365 0.00414 0.00484 0.00533 0.00588 0.00617 0.00666 0.00672 0.00694 0.00709 0.00689 0.00699 ANG. 89.1 88.5 80.7 76.6 79.1 75.4 75.0 78.0 71.6 69.5 71.5 70.6 69.0 71.4 69.0 68.9 MAG. 0.999 0.996 0.996 0.994 0.991 0.988 0.983 0.980 0.976 0.971 0.966 0.960 0.955 0.948 0.942 0.937 ANG. –2.2 –4.5 –6.7 –8.7 –11.0 –13.2 –15.3 –17.4 –19.6 –21.7 –23.7 –25.6 –27.8 –29.9 –31.8 –33.8 850 900 950 1000 0.896 0.884 0.880 0.866 –49.2 –52.4 –54.7 –57.7 2.00 1.96 1.93 1.89 114.7 110.4 107.1 103.8 0.00644 0.00633 0.00585 0.00605 74.2 75.5 77.8 82.1 0.930 0.923 0.917 0.910 –35.8 –37.6 –39.8 –41.9 Rev.2.00 Aug 10, 2005 page 6 of 7 3SK318 Package Dimensions JEITA Package Code RENESAS Code SC-82A Package Name PTSP0004ZA-A CMPAK-4(T) / CMPAK-4(T)V D MASS[Typ.] 0.006g A e2 e Q b1 c B B E HE LP Reference Symbol L A A x M L1 S A e2 A2 e l1 b5 S b c A A1 y S b2 A3 b e1 b1 b3 c1 c1 c A-A Section l1 b4 B-B Section Pattern of terminal position areas A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 l1 Q Dimension in Millimeters Min 0.8 0 0.8 0.25 0.35 0.1 1.8 1.15 1.8 0.3 0.1 0.2 Nom 0.9 0.25 0.32 0.42 0.3 0.4 0.13 0.11 2.0 1.25 0.65 0.6 2.1 Max 1.1 0.1 1.0 0.4 0.5 0.15 2.2 1.35 2.4 0.7 0.5 0.6 0.05 0.05 0.45 0.55 1.5 0.9 0.2 Ordering Information Part Name 3SK318YB-TL-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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