RENESAS BCR5KM

To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5KM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR5KM
OUTLINE DRAWING
Dimensions in mm
3 ± 0.3
6.5 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15
➁
.................................................................. 5A
● VDRM ................................................................. 600V
● IFGT !, IRGT ! , IRGT # ................... 15mA (10mA) ✽3
● UL Recognized: Yellow Card No.E80276(N)
File No. E80271
➀
2.6 ± 0.2
➀➁➂
● IT (RMS)
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
✽ Measurement point of
case temperature
➀ T1 TERMINAL
➁ T2 TERMINAL
➂ ➂ GATE TERMINAL
TO-220FN
APPLICATION
Control of heater such as electric rice cooker, electric pot
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Voltage class
Parameter
Repetitive peak off-state
Non-repetitive peak off-state voltage✽1
Symbol
Parameter
Unit
12
600
720
voltage✽1
Conditions
IT (RMS)
ITSM
RMS on-state current
Surge on-state current
Commercial frequency, sine full wave 360° conduction, Tc=103°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
I2t
I2t for fusing
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
PGM
Peak gate power dissipation
PG (AV)
VGM
IGM
Tj
Tstg
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
—
Viso
Weight
Isolation voltage
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
V
V
Ratings
5
50
Unit
A
A
10.4
A 2s
3
0.3
10
W
W
V
2
–40 ~ +125
–40 ~ +125
A
°C
°C
2.0
2000
g
V
✽1. Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IDRM
VTM
Repetitive peak off-state current
On-state voltage
VFGT !
VRGT !
Gate trigger voltage ✽2
Rth (j-c)
Rth (j-a)
Tj=125°C, VDRM applied
Tc=25°C, ITM=7A, Instantaneous measurement
!
@
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Limits
Test conditions
!
Gate trigger current ✽2
@
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
Gate non-trigger voltage
Thermal resistance
Thermal resistance
Tj=125°C, VD=1/2VDRM
Junction to case ✽4
Junction to ambient
Min.
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
0.2
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
15 ✽3
15 ✽3
15 ✽3
—
3.8
50
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/ W
°C/ W
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. High sensitivity (IGT≤ 10mA) is also available. (IGT item ➀)
✽4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
PERFORMANCE CURVES
RATED SURGE ON-STATE
CURRENT
102
7
5
3
2
101
7
5
3
2
100
Tj = 25°C
100
7
5
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
MAXIMUM ON-STATE
CHARACTERISTICS
90
80
70
60
50
40
30
20
10
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5KM
102
GATE VOLTAGE (V)
7
5
3
2
VGM = 10V
101
PGM = 3W
7
5
3 VGT = 1.5V
2
100
7
5
3
2
IGM = 2A
Tj = 25°C
IGT = 15mA
PGM = 0.3W
VGD = 0.2V
10–1 1
10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
100 (%)
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT (Tj = t°C)
GATE TRIGGER CURRENT (Tj = 25°C)
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
7
5
4
3
2
TYPICAL EXAMPLE
IRGT III
102
7
5
4
3
2
IFGT I
IRGT I
101
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
103
7
5
4
3
2
TYPICAL EXAMPLE
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
TRANSIENT THERMAL IMPEDANCE (°C/W)
GATE TRIGGER VOLTAGE (Tj = t°C)
GATE TRIGGER VOLTAGE (Tj = 25°C)
100 (%)
GATE CURRENT (mA)
102 2 3 5 7 103 2 3 5 7
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
JUNCTION TEMPERATURE (°C)
102
7
5
4
3
2
101
7
5
4
3
2
100 2
10 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
TRANSIENT THERMAL IMPEDANCE (°C/W)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
10
9
8 360°
7 CONDUCTION
RESISTIVE,
6 INDUCTIVE
5 LOADS
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9 10
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
140
AMBIENT TEMPERATURE (°C)
CASE TEMPERATURE (°C)
160
120
100
80
60
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
0
1
2
3
4
5
6
7
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
140
120
80
60
CURVES APPLY
REGARDLESS OF
CONDUCTION ANGLE
RESISTIVE,
20 INDUCTIVE LOADS
NATURAL CONVECTION
40
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
HOLDING CURRENT (Tj = t°C)
HOLDING CURRENT (Tj = 25°C)
100 (%)
RMS ON-STATE CURRENT (A)
100 (%)
7
5
3
4
5
6
7
8
TYPICAL EXAMPLE
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
103
102
2
2
3
2
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
7
5
4
3
1
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
105
REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C)
80
0
RMS ON-STATE CURRENT (A)
7
5
DISTRIBUTION
TYPICAL
EXAMPLE
101
7
5
4
3
2
VD = 12V
100
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT (mA)
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
NO FINS
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
RESISTIVE, INDUCTIVE LOADS
100
100 100 t2.3
60 60 t2.3
100
0
8
120 120 t2.3
3
2
DISTRIBUTION
102
T2+, G–
TYPICAL
EXAMPLE
7
5
3
2
101
7
5
3
+
+
TYPICAL
2 T2–, G – 

T2 , G  EXAMPLE
100
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5KM
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
100 (%)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
IRGT III
7
5
4
3
160
TYPICAL EXAMPLE
Tj = 125°C
TYPICAL EXAMPLE
120
III QUADRANT
100
80
60
40
I QUADRANT
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
A
6V
102
A
6V
RG
V
IRGT I
2
7
5
4
3
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
140
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE (Tj = t°C)
BREAKOVER VOLTAGE (Tj = 25°C)
100 (%)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
TEST PROCEDURE 1
V
RG
TEST PROCEDURE 2
IFGT I
6Ω
2
A
6V
101 0
10
2
3 4 5 7 101
2
3 4 5 7 102
GATE TRIGGER PULSE WIDTH (µs)
V
RG
TEST PROCEDURE 3
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5KM
The product guaranteed maximum junction
temperature 150°C (See warning.)
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR5KM
OUTLINE DRAWING
Dimensions in mm
3 ± 0.3
6.5 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15
.................................................................. 5A
● VDRM ................................................................. 600V
● IFGT !, IRGT ! , IRGT # ................... 15mA (10mA) ✽3
● UL Recognized: Yellow Card No.E80276(N)
File No. E80271
➁
➀
2.6 ± 0.2
➀➁➂
● IT (RMS)
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
✽ Measurement point of
case temperature
➀ T1 TERMINAL
➁ T2 TERMINAL
➂ ➂ GATE TERMINAL
TO-220FN
APPLICATION
Control of heater such as electric rice cooker, electric pot
(Warning)
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied.
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Voltage class
Parameter
Repetitive peak off-state
Non-repetitive peak off-state voltage✽1
Symbol
Parameter
Unit
12
600
720
voltage✽1
Conditions
IT (RMS)
ITSM
RMS on-state current
Surge on-state current
Commercial frequency, sine full wave 360° conduction, Tc=128°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
I2t
I2t for fusing
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
PGM
Peak gate power dissipation
PG (AV)
VGM
IGM
Tj
Tstg
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
—
Viso
Weight
Isolation voltage
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
V
V
Ratings
5
50
Unit
A
A
10.4
A 2s
3
0.3
10
W
W
V
2
–40 ~ +150
–40 ~ +150
A
°C
°C
2.0
2000
g
V
✽1. Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150°C (See warning.)
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IDRM
VTM
Repetitive peak off-state current
On-state voltage
VFGT !
VRGT !
Gate trigger voltage ✽2
Rth (j-c)
Rth (j-a)
Tj=150°C, VDRM applied
Tc=25°C, ITM=7A, Instantaneous measurement
!
@
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Limits
Test conditions
!
Gate trigger current ✽2
@
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
Gate non-trigger voltage
Thermal resistance
Thermal resistance
Tj=125°C/150°C, VD=1/2VDRM
Junction to case ✽4
Junction to ambient
Min.
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
0.2/0.1
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
15 ✽3
15 ✽3
15 ✽3
—
3.8
50
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/ W
°C/ W
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. High sensitivity (IGT≤ 10mA) is also available. (IGT item ➀)
✽4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
PERFORMANCE CURVES
RATED SURGE ON-STATE
CURRENT
MAXIMUM ON-STATE
CHARACTERISTICS
102
100
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
7
5
3
2
101
7
5
Tj = 150°C
3
2
100
7
5
Tj = 25°C
3
2
10–1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
ON-STATE VOLTAGE (V)
4.0
90
80
70
60
50
40
30
20
10
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5KM
GATE VOLTAGE (V)
5
3
2
VGM = 10V
101
7
5
3 VGT = 1.5V
2
100
7
5
3
2
PGM = 3W
IGM = 2A
Tj = 25°C
IGT = 15mA
PGM = 0.3W
10–1
7
VGD = 0.1V
5
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
GATE TRIGGER CURRENT (Tj = t°C)
GATE TRIGGER CURRENT (Tj = 25°C)
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)
100 (%)
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150°C (See warning.)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
TYPICAL EXAMPLE
7
5
3
2
IRGT III
IRGT I
102
7
5
3
2
IFGT I
101
7
5
3
2
100
–60 –40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
103
7
5
4
3
2
TYPICAL EXAMPLE
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
TRANSIENT THERMAL IMPEDANCE (°C/W)
GATE TRIGGER VOLTAGE (Tj = t°C)
GATE TRIGGER VOLTAGE (Tj = 25°C)
100 (%)
GATE CURRENT (mA)
102 2 3 5 7
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
TRANSIENT THERMAL IMPEDANCE (°C/W)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
102
7
5
4
3
2
101
7
5
4
3
2
100
102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
CONDUCTION TIME
(CYCLES AT 60Hz)
7
10
9
8 360°
7 CONDUCTION
RESISTIVE,
6 INDUCTIVE
5 LOADS
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9 10
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150°C (See warning.)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
CASE TEMPERATURE (°C)
160
140
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
120
100
80
60
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
0
1
2
3
4
5
6
7
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
120 120 t2.3
140
100 100 t2.3
120
60 60 t2.3
100 ALL FINS ARE
BLACK PAINTED
80 ALUMINUM AND
GREASED
60
CURVES APPLY
REGARDLESS OF
40
CONDUCTION ANGLE
RESISTIVE,
20 INDUCTIVE LOADS
NATURAL CONVECTION
0
8
80
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
HOLDING CURRENT (Tj = t°C)
HOLDING CURRENT (Tj = 25°C)
100 (%)
RMS ON-STATE CURRENT (A)
100 (%)
7
5
3
2
TYPICAL
EXAMPLE
101
7
5
4
3
2
VD = 12V
100
–60 –40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
4
5
6
7
8
TYPICAL EXAMPLE
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
103
DISTRIBUTION
3
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
102
7
5
4
3
2
2
106
REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURALCONVECTION
140
NO FINS,CURVES
APPLY REGARDLESS
120
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE
100
LOADS
1
RMS ON-STATE CURRENT (A)
LACHING CURRENT (mA)
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
0
7
5
3
2
102
7
5
3
2
T2+, G+ TYPICAL
T2– , G– EXAMPLE
DISTRIBUTION
T2+, G–
TYPICAL
EXAMPLE
101
7
5
3
2
100
–60 –40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150°C (See warning.)
100 (%)
160
100 (%)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
TYPICAL EXAMPLE
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
160
TYPICAL EXAMPLE
Tj = 125°C
120
III QUADRANT
100
80
60
40
I QUADRANT
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
JUNCTION TEMPERATURE (°C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 150°C)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
TYPICAL EXAMPLE
Tj = 125°C
140
120
100
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
160
140
100 (%)
100 (%)
BREAKOVER VOLTAGE (Tj = t°C)
BREAKOVER VOLTAGE (Tj = 25°C)
140
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 125°C)
III QUADRANT
80
60
40
I QUADRANT
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
103
IRGT III
7
5
4
3
TYPICAL EXAMPLE
IRGT I
2
102
7
5
4
3
IFGT I
2
101 0
10
2
3 4 5 7 101
2
3 4 5 7 102
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
GATE TRIGGER PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
RECOMMENDED CIRCUIT VALUES
AROUND THE TRIAC
6Ω
6Ω
LOAD
A
6V
RG
V
TEST PROCEDURE 1
C1
A
6V
V
RG
TEST PROCEDURE 2
R1
C1 = 0.1~0.47µF
R1 = 47~100Ω
C0
R0
C0 = 0.1µF
R0 = 100Ω
6Ω
A
6V
V
RG
TEST PROCEDURE 3
Mar. 2002