To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR5KM OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 ➁ .................................................................. 5A ● VDRM ................................................................. 600V ● IFGT !, IRGT ! , IRGT # ................... 15mA (10mA) ✽3 ● UL Recognized: Yellow Card No.E80276(N) File No. E80271 ➀ 2.6 ± 0.2 ➀➁➂ ● IT (RMS) 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 ✽ Measurement point of case temperature ➀ T1 TERMINAL ➁ T2 TERMINAL ➂ ➂ GATE TERMINAL TO-220FN APPLICATION Control of heater such as electric rice cooker, electric pot MAXIMUM RATINGS Symbol VDRM VDSM Voltage class Parameter Repetitive peak off-state Non-repetitive peak off-state voltage✽1 Symbol Parameter Unit 12 600 720 voltage✽1 Conditions IT (RMS) ITSM RMS on-state current Surge on-state current Commercial frequency, sine full wave 360° conduction, Tc=103°C 60Hz sinewave 1 full cycle, peak value, non-repetitive I2t I2t for fusing Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation PG (AV) VGM IGM Tj Tstg Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature — Viso Weight Isolation voltage Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case V V Ratings 5 50 Unit A A 10.4 A 2s 3 0.3 10 W W V 2 –40 ~ +125 –40 ~ +125 A °C °C 2.0 2000 g V ✽1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C ELECTRICAL CHARACTERISTICS Symbol Parameter IDRM VTM Repetitive peak off-state current On-state voltage VFGT ! VRGT ! Gate trigger voltage ✽2 Rth (j-c) Rth (j-a) Tj=125°C, VDRM applied Tc=25°C, ITM=7A, Instantaneous measurement ! @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω # VRGT # IFGT ! IRGT ! IRGT # VGD Limits Test conditions ! Gate trigger current ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω # Gate non-trigger voltage Thermal resistance Thermal resistance Tj=125°C, VD=1/2VDRM Junction to case ✽4 Junction to ambient Min. — — Typ. — — — — — — — — — — — — 0.2 — — — — — — — Max. 2.0 1.5 1.5 1.5 1.5 15 ✽3 15 ✽3 15 ✽3 — 3.8 50 Unit mA V V V V mA mA mA V °C/ W °C/ W ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. High sensitivity (IGT≤ 10mA) is also available. (IGT item ➀) ✽4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT 102 7 5 3 2 101 7 5 3 2 100 Tj = 25°C 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTICS 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM 102 GATE VOLTAGE (V) 7 5 3 2 VGM = 10V 101 PGM = 3W 7 5 3 VGT = 1.5V 2 100 7 5 3 2 IGM = 2A Tj = 25°C IGT = 15mA PGM = 0.3W VGD = 0.2V 10–1 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 100 (%) GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 TYPICAL EXAMPLE IRGT III 102 7 5 4 3 2 IFGT I IRGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) GATE CURRENT (mA) 102 2 3 5 7 103 2 3 5 7 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) JUNCTION TEMPERATURE (°C) 102 7 5 4 3 2 101 7 5 4 3 2 100 2 10 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 10 9 8 360° 7 CONDUCTION RESISTIVE, 6 INDUCTIVE 5 LOADS 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 140 AMBIENT TEMPERATURE (°C) CASE TEMPERATURE (°C) 160 120 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 1 2 3 4 5 6 7 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 120 80 60 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, 20 INDUCTIVE LOADS NATURAL CONVECTION 40 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 100 (%) RMS ON-STATE CURRENT (A) 100 (%) 7 5 3 4 5 6 7 8 TYPICAL EXAMPLE 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE 103 102 2 2 3 2 HOLDING CURRENT VS. JUNCTION TEMPERATURE 7 5 4 3 1 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) 80 0 RMS ON-STATE CURRENT (A) 7 5 DISTRIBUTION TYPICAL EXAMPLE 101 7 5 4 3 2 VD = 12V 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) LACHING CURRENT (mA) AMBIENT TEMPERATURE (°C) RMS ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 100 100 t2.3 60 60 t2.3 100 0 8 120 120 t2.3 3 2 DISTRIBUTION 102 T2+, G– TYPICAL EXAMPLE 7 5 3 2 101 7 5 3 + + TYPICAL 2 T2–, G – T2 , G EXAMPLE 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 IRGT III 7 5 4 3 160 TYPICAL EXAMPLE Tj = 125°C TYPICAL EXAMPLE 120 III QUADRANT 100 80 60 40 I QUADRANT 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω A 6V 102 A 6V RG V IRGT I 2 7 5 4 3 BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 140 BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C TEST PROCEDURE 1 V RG TEST PROCEDURE 2 IFGT I 6Ω 2 A 6V 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE TRIGGER PULSE WIDTH (µs) V RG TEST PROCEDURE 3 Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR5KM OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 .................................................................. 5A ● VDRM ................................................................. 600V ● IFGT !, IRGT ! , IRGT # ................... 15mA (10mA) ✽3 ● UL Recognized: Yellow Card No.E80276(N) File No. E80271 ➁ ➀ 2.6 ± 0.2 ➀➁➂ ● IT (RMS) 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 ✽ Measurement point of case temperature ➀ T1 TERMINAL ➁ T2 TERMINAL ➂ ➂ GATE TERMINAL TO-220FN APPLICATION Control of heater such as electric rice cooker, electric pot (Warning) 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied. MAXIMUM RATINGS Symbol VDRM VDSM Voltage class Parameter Repetitive peak off-state Non-repetitive peak off-state voltage✽1 Symbol Parameter Unit 12 600 720 voltage✽1 Conditions IT (RMS) ITSM RMS on-state current Surge on-state current Commercial frequency, sine full wave 360° conduction, Tc=128°C 60Hz sinewave 1 full cycle, peak value, non-repetitive I2t I2t for fusing Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation PG (AV) VGM IGM Tj Tstg Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature — Viso Weight Isolation voltage Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case V V Ratings 5 50 Unit A A 10.4 A 2s 3 0.3 10 W W V 2 –40 ~ +150 –40 ~ +150 A °C °C 2.0 2000 g V ✽1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE The product guaranteed maximum junction temperature 150°C (See warning.) ELECTRICAL CHARACTERISTICS Symbol Parameter IDRM VTM Repetitive peak off-state current On-state voltage VFGT ! VRGT ! Gate trigger voltage ✽2 Rth (j-c) Rth (j-a) Tj=150°C, VDRM applied Tc=25°C, ITM=7A, Instantaneous measurement ! @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω # VRGT # IFGT ! IRGT ! IRGT # VGD Limits Test conditions ! Gate trigger current ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω # Gate non-trigger voltage Thermal resistance Thermal resistance Tj=125°C/150°C, VD=1/2VDRM Junction to case ✽4 Junction to ambient Min. — — Typ. — — — — — — — — — — — — 0.2/0.1 — — — — — — — Max. 2.0 1.5 1.5 1.5 1.5 15 ✽3 15 ✽3 15 ✽3 — 3.8 50 Unit mA V V V V mA mA mA V °C/ W °C/ W ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. High sensitivity (IGT≤ 10mA) is also available. (IGT item ➀) ✽4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT MAXIMUM ON-STATE CHARACTERISTICS 102 100 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 7 5 3 2 101 7 5 Tj = 150°C 3 2 100 7 5 Tj = 25°C 3 2 10–1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 ON-STATE VOLTAGE (V) 4.0 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM GATE VOLTAGE (V) 5 3 2 VGM = 10V 101 7 5 3 VGT = 1.5V 2 100 7 5 3 2 PGM = 3W IGM = 2A Tj = 25°C IGT = 15mA PGM = 0.3W 10–1 7 VGD = 0.1V 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) 100 (%) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE The product guaranteed maximum junction temperature 150°C (See warning.) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 TYPICAL EXAMPLE 7 5 3 2 IRGT III IRGT I 102 7 5 3 2 IFGT I 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) GATE CURRENT (mA) 102 2 3 5 7 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) JUNCTION TEMPERATURE (°C) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 102 7 5 4 3 2 101 7 5 4 3 2 100 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) 7 10 9 8 360° 7 CONDUCTION RESISTIVE, 6 INDUCTIVE 5 LOADS 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE The product guaranteed maximum junction temperature 150°C (See warning.) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT AMBIENT TEMPERATURE (°C) CASE TEMPERATURE (°C) 160 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 1 2 3 4 5 6 7 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 120 120 t2.3 140 100 100 t2.3 120 60 60 t2.3 100 ALL FINS ARE BLACK PAINTED 80 ALUMINUM AND GREASED 60 CURVES APPLY REGARDLESS OF 40 CONDUCTION ANGLE RESISTIVE, 20 INDUCTIVE LOADS NATURAL CONVECTION 0 8 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 100 (%) RMS ON-STATE CURRENT (A) 100 (%) 7 5 3 2 TYPICAL EXAMPLE 101 7 5 4 3 2 VD = 12V 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 4 5 6 7 8 TYPICAL EXAMPLE 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE 103 DISTRIBUTION 3 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. JUNCTION TEMPERATURE 102 7 5 4 3 2 2 106 REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURALCONVECTION 140 NO FINS,CURVES APPLY REGARDLESS 120 OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE 100 LOADS 1 RMS ON-STATE CURRENT (A) LACHING CURRENT (mA) AMBIENT TEMPERATURE (°C) RMS ON-STATE CURRENT (A) 0 7 5 3 2 102 7 5 3 2 T2+, G+ TYPICAL T2– , G– EXAMPLE DISTRIBUTION T2+, G– TYPICAL EXAMPLE 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE The product guaranteed maximum junction temperature 150°C (See warning.) 100 (%) 160 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 160 TYPICAL EXAMPLE Tj = 125°C 120 III QUADRANT 100 80 60 40 I QUADRANT 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 JUNCTION TEMPERATURE (°C) RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 150°C) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH TYPICAL EXAMPLE Tj = 125°C 140 120 100 GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 160 140 100 (%) 100 (%) BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) 140 BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 125°C) III QUADRANT 80 60 40 I QUADRANT 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 103 IRGT III 7 5 4 3 TYPICAL EXAMPLE IRGT I 2 102 7 5 4 3 IFGT I 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) GATE TRIGGER PULSE WIDTH (µs) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS RECOMMENDED CIRCUIT VALUES AROUND THE TRIAC 6Ω 6Ω LOAD A 6V RG V TEST PROCEDURE 1 C1 A 6V V RG TEST PROCEDURE 2 R1 C1 = 0.1~0.47µF R1 = 47~100Ω C0 R0 C0 = 0.1µF R0 = 100Ω 6Ω A 6V V RG TEST PROCEDURE 3 Mar. 2002