AO4852 60V Dual N-Channel MOSFET General Description The AO4852 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. As a pair these MOSFETs operate very efficiently in Push Pull and Bridge topologies. Features VDS (V) = 60V (VGS = 10V) ID = 3.5A RDS(ON) <90mΩ (VGS = 10V) RDS(ON) <105mΩ (VGS = 4.5V) SOIC-8 D2 D1 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage TA=70°C ID B V 3 2.8 2.4 TA=70°C Repetitive avalanche energy 0.3mH Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Lead C 2 1.4 1.3 0.9 IAR B TJ, TSTG Steady-State Steady-State RθJA RθJL W 8 A 9.6 mJ -55 to 150 °C EAR Symbol t ≤ 10s A 20 PD Avalanche Current B 1/4 ±20 3.5 IDM TA=25°C Power Dissipation Units V VGS TA=25°C Continuous Drain Current A Pulsed Drain Current Maximum 10 Sec Steady State 60 Typ 48 74 33 Max 62.5 90 40 Units °C/W °C/W °C/W www.freescale.net.cn AO4852 60V Dual N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min ID=250µA, VGS=0V Units V 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 20 TJ=55°C VGS=10V, ID=3A Static Drain-Source On-Resistance Max 60 VDS=60V, VGS=0V IDSS RDS(ON) Typ TJ=125°C VGS=4.5V, ID=2A 5 µA 100 nA 2.3 2.6 V 79 90 146 159 86 105 mΩ 1 V A mΩ gFS Forward Transconductance VDS=5V, ID=3A 15 VSD Diode Forward Voltage IS=1A,VGS=0V 0.8 ISM Pulsed Body-Diode Current 20 A IS Maximum Body-Diode Continuous Current 2.5 A 450 pF B DYNAMIC PARAMETERS Ciss Input Capacitance Coss S 372 Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz 31 VGS=0V, VDS=0V, f=1MHz 1.7 2.6 Ω 7.1 9.2 nC pF 17 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge VGS=10V, VDS=30V, ID=3A pF 3.6 nC 1 nC Qgs Gate Source Charge Qgd Gate Drain Charge 2 tD(on) Turn-On DelayTime 4.1 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=3A, dI/dt=100A/µs 23.4 Qrr Body Diode Reverse Recovery Charge IF=3A, dI/dt=100A/µs 23.2 VGS=10V, VDS=30V, RL=10Ω, RGEN=3Ω nC 5.3 2.1 ns ns 15 ns 2.1 ns 29 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev1: Nov. 2010 2/4 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA www.freescale.net.cn AO4852 60V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 16 10V 4.5V 16 6V VDS=5V 4V 12 ID(A) ID (A) 12 8 125°C 8 3.5V 4 4 25°C VGS=3V 0 0 0 1 2 3 4 5 2 2.4 VDS (Volts) Fig 1: On-Region Characteristics 3.2 3.6 4 VGS(Volts) Figure 2: Transfer Characteristics 105 Normalized On-Resistance 2.2 95 VGS=4.5V RDS(ON) (mΩ ) 2.8 85 75 VGS=10V 65 55 45 2 ID=2A 1.8 Vgs=4.5v 1.6 VGS=10V 1.4 ID=3A 1.2 1 0.8 0 2 4 6 8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 180 1.0E+01 ID=3A 1.0E+00 150 1.0E-01 IS (A) RDS(ON) (mΩ ) 125°C 120 90 25°C 25°C 60 1.0E-03 1.0E-04 30 1.0E-05 0 2 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/4 125°C 1.0E-02 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO4852 60V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 10 VDS=30V ID=3A 500 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 400 300 200 Coss 100 0 Crss 0 0 1 2 3 4 5 6 7 8 0 10 Qg (nC) Figure 7: Gate-Charge Characteristics 30 50 60 35 TJ(Max)=150°C TA=25°C 30 10µs ID (Amps) 25 100µs 1ms Power (W) 10.0 10ms 0.1s 1.0 1s TJ(Max)=150°C TA=25°C 20 15 10 10s 5 DC 0 0.001 0.1 0.1 40 VDS (Volts) Figure 8: Capacitance Characteristics RDS(ON) limited 100.0 20 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4/4 www.freescale.net.cn