< HIGH VOLTAGE DIODE MODULES > RM250DG-130F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules RM250DG-130F IF···································································· 250A VRRM·························································· 6500V 2-element in a Pack High insulated Type Soft Recovery Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM November 2012 HVM-2025-A.doc Dimensions in mm 1 < HIGH VOLTAGE DIODE MODULES > RM250DG-130F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules MAXIMUM RATINGS Symbol Item VRRM Repetitive peak reverse voltage VRSM Non-repetitive peak reverse voltage IF IFRM IFSM I2t Viso Ve Tj Tjop Tstg Collector current Surge (non-repetitive) forward current Surge current load integral Isolation voltage Partial discharge extinction voltage Junction temperature Operating junction temperature Storage temperature Conditions Ratings 6500 6300 5700 6500 6300 5700 250 500 2350 28 10200 5100 −50 ~ +150 −50 ~ +125 −55 ~ +125 Tj = +125°C Tj = +25°C Tj = −50°C Tj = +125°C Tj = +25°C Tj = −50°C DC, Tc = 65°C Pulse (Note 1) Tj_start = 125°C, tp = 10 ms, Half-sine wave, VR = 0 V RMS, sinusoidal, f = 60 Hz, t = 1 min. RMS, sinusoidal, f = 60 Hz, QPD ≤ 10 pC Unit V V A A A kA2s V V °C °C °C ELECTRICAL CHARACTERISTICS Symbol Item Conditions IRRM Repetitive reverse current VRM = VRRM VFM Forward voltage IF = 250 A(Note 2) trr Reverse recovery time VCC = 3600 V IF = 250 A Ls = 150 nH Irr Reverse recovery current Qrr Reverse recovery charge Erec(10%) Reverse recovery energy (Note 3) Erec Reverse recovery energy(Note 4) November 2012 HVM-2025-A.doc −di/dt = 1250 A/µs @ Tj = 25°C 1100 A/µs @ Tj = 125°C Inductive load 2 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min — — — — Tj = 25°C — Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C — — — — — — — — — Limits Typ — 2.0 3.30 3.40 0.50 H5 0.60 260 290 240 340 0.30 0.60 0.40 0.80 Max 2.0 10.0 — 4.30 — — — — — — — — — — Unit mA V µs A µC J J < HIGH VOLTAGE DIODE MODULES > RM250DG-130F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules THERMAL CHARACTERISTICS Symbol Item Rth(j-c) Thermal resistance Rth(c-s) Contact thermal resistance Conditions Junction to Case (per 1/2 module) Case to heat sink, grease = 1 W/m·k D(c-s) = 100 µm (per 1/2 module) Min — Limits Typ — Max 75.0 K/kW — 48.0 — K/kW Min 7.0 3.0 — 600 26.0 56.0 — — Limits Typ — — 1.0 — — — 44.0 0.27 Max 22.0 6.0 — — — — — — Unit MECHANICAL CHARACTERISTICS Symbol Mt Ms m CTI da ds LP AK RAA’+KK’ Note 1. Note 2. Note 3. Note 4. Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance Conditions M8 : Main terminals screw M6 : Mounting screw 1/2 module Tc = 25°C, 1/2 module Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. Erec(10%) is the integral of 0.1VR x 0.1IF x dt. The integration range of Erec according to IEC 60747. November 2012 HVM-2025-A.doc 3 Unit N·m N·m kg — mm mm nH mΩ < HIGH VOLTAGE DIODE MODULES > RM250DG-130F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules PERFORMANCE CURVES FORWARD CHARACTERISTICS (TYPICAL) REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) 500 1.5 Reverse Recovery Energies [J] VCC = 3 60 0V, L S = 15 0n H T j = 1 25 °C , Ind uctive load 400 T j = 1 25 °C 300 200 100 1.0 0.5 0 0.0 0 1 2 3 4 5 6 0 Forward Voltage [V] 200 300 10 1000 VCC = 3 600 V, L S = 15 0nH T j = 1 25°C, Ind uctive loa d Reverse Recovery Time [µs] VCC = 36 00V, LS = 1 50 nH T j = 125 °C, In du cti ve lo ad 1.0 0.5 0.0 Ir r 1 tr r 0.1 400 800 1200 1600 2000 HVM-2025-A.doc 100 Forward Current [A] 4 100 10 10 Current Slope [A/µs] November 2012 500 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 1.5 0 400 Forward Current [A] REVERSE RECOVERY CHARACTERISTICS (TYPICAL) Reverse Recovery Energies [J] 100 1000 Reverse Recovery Current [A] Forward Curre nt [A] T j = 25°C < HIGH VOLTAGE DIODE MODULES > RM250DG-130F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules PERFORMANCE CURVES REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 600 Reverse Recovery Current [A] VCC 45 00V, di/dt < 1.5kA/µs T j = 1 25°C, L s = 150 nH 500 400 300 200 100 0 0 2000 4000 6000 8000 Reverse Voltage [V] TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Normalized Transient Thermal impedance 1.2 Rth(j-c) = 75.0K/kW Z 1 th( j c ) 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 Time [s] November 2012 HVM-2025-A.doc 5 (t ) i n R 1 exp i 1 t i 1 2 3 4 Ri [K/kW] 0.0055 0.2360 0.4680 0.2905 ti [sec] 0.0001 0.0131 0.0878 0.6247 < HIGH VOLTAGE DIODE MODULES > RM250DG-130F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules Keep safety first in your circuit designs! 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