Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM100TL-12NF Six IGBTMOD™ NF-Series Module 100 Amperes/600 Volts Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case* Rth(j-c)Q Per IGBT 1/6 Module — — 0.23 °C/W Thermal Resistance, Junction to Case* Rth(j-c)D Per FWDi 1/6 Module — — 0.41 °C/W Rth(c-f) Per 1/6 Module, Thermal Grease Applied — — 0.085 °C/W 6.3 — 63 Ω Contact Thermal Resistance External Gate Resistance RG *TC, Tf measured point is just under the chips. COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 150 12 100 11 50 10 8 0 2 4 6 9 8 1 0 50 100 150 8 IC = 200A 6 4 IC = 30A 2 0 200 IC = 100A 6 8 10 12 14 16 18 COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 Tj = 25°C Tj = 125°C CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 2 Tj = 25°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 102 101 3 0 10 10 VGE = 15V Tj = 25°C Tj = 125°C 0 1 2 3 4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10/10 Rev. 1 5 20 103 VGE = 0V tf Cies 101 SWITCHING TIME, (ns) 0 4 Tj = 25°C VGE = 20V 15 13 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 200 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (TYPICAL) Coes 100 102 td(off) td(on) tr 101 VCC = 300V VGE = ±15V RG = 6.3Ω Tj = 125°C Inductive Load Cres 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 100 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM100TL-12NF Six IGBTMOD™ NF-Series Module 100 Amperes/600 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) 10-2 10-3 VCC = 300V 12 8 4 0 0 120 240 360 480 600 100 10-1 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 100 101 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 100 Err 10-1 10-1 100 10-2 100 Err 10-1 VCC = 300V VGE = ±15V RG = 6.3Ω Tj = 125°C Inductive Load C Snubber at Bus 101 EMITTER CURRENT, IE, (AMPERES) GATE RESISTANCE, RG, (Ω) 10-1 VCC = 200V VCC = 300V VGE = ±15V RG = 6.3Ω Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) GATE CHARGE, QG, (nC) VCC = 300V VGE = ±15V IC = 100A Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 10-3 16 101 EMITTER CURRENT, IE, (AMPERES) 100 100 100 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 101 103 102 IC = 100A REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 101 101 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 102 103 VCC = 300V VGE = ±15V RG = 6.3Ω Tj = 25°C Inductive Load Irr trr REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) REVERSE RECOVERY TIME, trr, (ns) 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE CHARGE VS. VGE 102 10-2 100 VCC = 300V VGE = ±15V IE = 100A Tj = 125°C Inductive Load C Snubber at Bus 101 102 GATE RESISTANCE, RG, (Ω) 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.23°C/W (IGBT) Rth(j-c) = 0.41°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 4 10/10 Rev. 1