CM100DU-24NFH Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD™ NFH-Series Module 100 Amperes/1200 Volts TC MEASUREMENT POINT A D N M K C2E1 K E2 F E C1 E2 G2 S B G1 E1 H G F P - NUTS (3 TYP) Q - (2 TYP) W V W W X Y W R J Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Z V T U C LABEL L G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 3.70 94.0 B 1.89 48.0 C 1.18+0.04/-0.0130.0+1.0/-0.5 D 3.15±0.01 80.0±0.25 E 0.43 11.0 F 0.16 4.0 G 0.71 18.0 H 0.51 13.0 J 0.53 13.5 K 0.91 23.0 L 0.83 21.2 M 0.67 17.0 Rev. 11/09 Dimensions N P Q R S T U V W X Y Z Inches 0.28 M5 Metric 0.26 Dia. 0.02 0.94 0.3 0.33 0.63 0.1 0.98 0.47 0.11 Millimeters 7.0 M5 Dia. 6.5 4.0 24.0 7.5 8.5 16.0 2.5 25.0 12.0 2.8 Features: £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Power Supplies £ Induction Heating £ Welders Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM100DU-24NFH is a 1200V (VCES), 100 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 100 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM100DU-24NFH Dual IGBTMOD™ NFH-Series Module 100 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM100DU-24NF Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (TC = 25°C) Peak Collector Current IC 100* Amperes ICM 200* Amperes Emitter Current** (TC = 25°C) IE 100* Amperes IEM 200* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 560 Watts Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C) PC 730 Watts Mounting Torque, M5 Main Terminal — 30 in-lb Mounting Torque, M6 Mounting — 40 in-lb — 310 Grams VISO 2500 Volts Peak Emitter Current** Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts IC = 100A, VGE = 15V, Tj = 125°C — 5.0 — Volts Total Gate Charge QG VCC = 600V, IC = 100A, VGE = 15V — 450 — nC Emitter-Collector Voltage** VEC IE = 100A, VGE = 0V — — 3.5 Volts Min. Typ. Max. Units — — 16 nf — — 1.3 nf — — 0.3 nf Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Time Fall Time Test Conditions VCE = 10V, VGE = 0V — — 100 ns VCC = 600V, IC = 100A, — — 50 ns td(off) VGE1 = VGE2 = 15V, RG = 3.1Ω, — — 250 ns tf Inductive Load Switching Operation, — — 150 ns Diode Reverse Recovery Time** trr IE = 100A — — 150 ns Diode Reverse Recovery Charge** Qrr — 5.0 — µC tr * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Rev. 11/09 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM100DU-24NFH Dual IGBTMOD™ NFH-Series Module 100 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module, TC Reference — — 0.22 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, TC Reference — — 0.47 °C/W Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/2 Module, — — 0.17 °C/W Thermal Resistance, Junction to Case Rth(j-c)'D Per FWDi 1/2 Module, TC Reference — — 0.29 °C/W Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.07 — °C/W 3.1 — 31 Ω Point per Outline Drawing Point per Outline Drawing TC Reference Point Under Chips Point per Outline Drawing Contact Thermal Resistance External Gate Resistance RG OUTPUT CHARACTERISTICS (TYPICAL) 12 100 11 10 50 9 0 8 0 2 4 6 8 150 100 50 0 10 5 0 7 6 5 4 3 2 1 0 20 15 10 VGE = 15V Tj = 25°C Tj = 125°C 8 50 0 100 150 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 IC = 200A 8 6 IC = 100A 4 IC = 40A 2 102 Tj = 25°C Tj = 125°C Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) 10 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 150 9 VGE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 13 15 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 200 14 VGE = 20V Tj = 25°C COLLECTOR CURRENT, IC, (AMPERES) 200 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 102 200 VGE = 0V Cies 101 Coes 100 Cres 0 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) Rev. 11/09 20 101 0 1 2 3 4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM100DU-24NFH Dual IGBTMOD™ NFH-Series Module 100 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 101 VCC = 600V VGE = 15V RG = 3.1Ω Tj = 125°C Inductive Load 102 VCC = 600V VGE = 15V RG = 3.1Ω Tj = 25°C Inductive Load 102 102 Irr trr 101 101 103 102 VCC = 600V 12 8 4 0 0 100 200 300 400 500 600 700 GATE CHARGE, QG, (nC) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) 102 103 102 101 100 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) VCC = 600V VGE = ±15V IE = 100A Tj = 125°C Inductive Load C Snubber at Bus 100 10-1 101 Err GATE RESISTANCE, RG, (Ω) 102 GATE RESISTANCE, RG, (Ω) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 101 102 VCC = 600V VGE = ±15V IC = 100A Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) VCC = 600V VGE = 15V RG = 3.1Ω Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 10-1 101 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) VCC = 400V SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) 4 16 EMITTER CURRENT, IE, (AMPERES) 100 100 100 IC = 100A COLLECTOR CURRENT, IC, (AMPERES) 101 102 101 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) tf tr 100 101 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) REVERSE RECOVERY TIME, trr, (ns) td(on) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) SWITCHING TIME, (ns) td(off) 102 GATE CHARGE VS. VGE 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 103 10-2 102 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 101 100 101 Err VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive Load C Snubber at Bus 102 103 EMITTER CURRENT, IE, (AMPERES) 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.22°C/W (IGBT) Rth(j-c) = 0.47°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) Rev. 11/09