ACE8205A Dual N-Channel Enhancement Mode Field Effect Transistor Description The ACE8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. It is ESD protected. ACE8205A is electrically identical. - RoHS Compliant Features VDS (V) = 20V ID = 6 A RDS(ON)< 37mΩ (VGS = 2.5V) RDS(ON)< 27mΩ (VGS = 4.5V) High power and current handing capability Lead free product is acquired Surface mount package Applications Battery protection Load switch Power management Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V ID 6 A IDM 25 A PD 1.5 W TJ,TSTG -55 To 150 ℃ RθJA 83 ℃/W Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient (Note 2) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. VER 1.1 1 ACE8205A Dual N-Channel Enhancement Mode Field Effect Transistor Packaging Type TSSOP-8 Ordering information ACE8205A XX + H Halogen - free Pb - free TM:TSSOP-8 VER 1.1 2 ACE8205A Dual N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TA=25 OC unless otherwise specified) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 21 - V Zero Gate Voltage Drain Current IDSS VDS=19.5V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.5 0.7 1.2 V VGS=4.5V, ID=4.5A - 21 27 mΩ Drain-Source On-State Resistance RDS(ON) VGS=2.5V, ID=3.5A - 27 37 mΩ VDS=5V,ID=4.5A - 10 - S - 600 - PF - 330 - PF Crss - 140 - PF Turn-on Delay Time td(on) - 10 20 nS Turn-on Rise Time tr VDD=10V,ID=1.0A - 11 25 nS td(off) VGS=4.5V,RGEN=6Ω - 35 75 nS - 30 60 nS - 10 15 nC - 2.3 - nC - 1.5 - nC - 0.75 1.2 V - - 1.7 A Parameter Off Characteristics On Characteristics (Note 2) gFS Forward Transconductance Dynamic Characteristics (Note3) Clss Input Capacitance VDS=8V,VGS=0V, Coss Output Capacitance F=1.0MHz Reverse Transfer Capacitance Switching Characteristics (Note 3) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg VDS=10V,ID=6A Gate-Source Charge Qgs Gate-Drain Charge Qgd VGS=4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 2) VSD VGS=0V,IS=1.7A Diode Forward Current (Note 1) IS Notes: 1. Surface Mounted on FR4 Board, t ≤ 10 sec. 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 3. Guaranteed by design, not subject to production. VER 1.1 3 ACE8205A Dual N-Channel Enhancement Mode Field Effect Transistor Typical Electrical and Thermal Characteristics Figure 1:Switching Test Circuit Figure 2:Switching Waveforms Figure 3 Power Dissipation Figure 4 Drain Current Figure 5 Output Characteristics Figure 6 Drain-Source On-Resistance VER 1.1 4 ACE8205A Dual N-Channel Enhancement Mode Field Effect Transistor Typical Electrical and Thermal Characteristics Figure 7 Transfer Characteristics Figure 9 Rdson vs Vgs Figure 11 Gate Charge Figure 8 Capacitance vs Vds Figure 10 Source- Drain Diode Forward Figure 12 Safe Operation Area VER 1.1 5 ACE8205A Dual N-Channel Enhancement Mode Field Effect Transistor Typical Electrical and Thermal Characteristics Figure 13 Normalized Maximum Transient Thermal Impedance VER 1.1 6 ACE8205A Dual N-Channel Enhancement Mode Field Effect Transistor TSSOP-8 Package Information Symbol D E b c E1 A A2 A1 e L H Θ Dimensions In Millimeters Mi Ma n x 2.900 3.100 4.300 0.190 0.090 6.250 4.500 0.300 0.200 6.550 1.100 1.000 0.150 0.800 0.020 0.500 1° 0.65(BSC ) 0.25(TYP ) 0.700 7° VER 1.1 7 ACE8205A Dual N-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 8