ACE ACE1632B

ACE1632B
N-Channel Enhancement Mode Field Effect Transistor
Description
ACE1613B uses advanced trench technology to provide excellent RDS(ON). This device particularly suits
for low voltage application such as power management of desktop computer or notebook computer power
management, DC/DC converter.
This device has specifically been designed to minimize input capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and
Computer application. It is also intended for any application with low gate charge drive requirements.
Features


VDS =60V, ID=18A, VGS 20V
RDS(ON)<40mΩ @VGS=10V
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Maximum Drain Current
Continuous
Pulsed
Continuous Power Dissipation (large heatsick)
ID
PD
18
45
110
Operating Temperature / Storage Temperature TJ/TSTG -55/150
A
W
O
C
Packaging Type
TO-252
D
G
S
VER 1.2
1
ACE1632B
N-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE1632B XX + H
Halogen - free
Pb - free
YM : TO-252
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Conditions
Min.
Typ.
Max. Unit
Off characteristics
Drain-Source Breakdown
Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
V(BR)DSS
VGS=0V, ID=250uA
60
V
IGSS
VDS=0V,VGS=±20V
±100
nA
IDSS
VDS=60V, VGS=0V
1
uA
1.5
2.9
V
VGS=10V, ID=10A
35
40
VGS=4.5V, ID=5A
42
50
VDS=15V,ID=10A
20
On characteristics b
Gate Threshold Voltage
VGS(th)
Drain-Source On-Resistance
RDS(ON)
Forward Transconductance
gfs*
VDS=VGS, IDS=250uA
Switching characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn- Off Rise Time
tf
1.1
mΩ
S
b
VDS=48V, VGS=10V,
ID=18A
50
20
nC
15
45
VGS=10V, VDS=30V, ID=10A,
RGEN=4.7Ω,
22
ns
42
13
Dynamic characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
1000
VDS=10V, VGS=0V
f=1MHz
Reverse Transfer
Crss
Capacitance
Drain-source diode characteristics and maximum ratings b
Drain-source diode forward
voltage
VSD
VGS=0V, IS=18A (2)
200
pF
100
1.3
VER 1.2
V
2
ACE1632B
N-Channel Enhancement Mode Field Effect Transistor
Note:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board
design.
2. Pulse Test: Pulse Width≦300µs, Duty Cycle≦2.0%
Typical Performance Characteristics (N-Channel)
VER 1.2
3
ACE1632B
N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
4
ACE1632B
N-Channel Enhancement Mode Field Effect Transistor
Packing Information
TO-252
Units: mm
VER 1.2
5
ACE1632B
N-Channel Enhancement Mode Field Effect Transistor
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
6