ACE1632B N-Channel Enhancement Mode Field Effect Transistor Description ACE1613B uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. This device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. Features VDS =60V, ID=18A, VGS 20V RDS(ON)<40mΩ @VGS=10V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Maximum Drain Current Continuous Pulsed Continuous Power Dissipation (large heatsick) ID PD 18 45 110 Operating Temperature / Storage Temperature TJ/TSTG -55/150 A W O C Packaging Type TO-252 D G S VER 1.2 1 ACE1632B N-Channel Enhancement Mode Field Effect Transistor Ordering information ACE1632B XX + H Halogen - free Pb - free YM : TO-252 Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. Unit Off characteristics Drain-Source Breakdown Voltage Gate Leakage Current Zero Gate Voltage Drain Current V(BR)DSS VGS=0V, ID=250uA 60 V IGSS VDS=0V,VGS=±20V ±100 nA IDSS VDS=60V, VGS=0V 1 uA 1.5 2.9 V VGS=10V, ID=10A 35 40 VGS=4.5V, ID=5A 42 50 VDS=15V,ID=10A 20 On characteristics b Gate Threshold Voltage VGS(th) Drain-Source On-Resistance RDS(ON) Forward Transconductance gfs* VDS=VGS, IDS=250uA Switching characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn- Off Rise Time tf 1.1 mΩ S b VDS=48V, VGS=10V, ID=18A 50 20 nC 15 45 VGS=10V, VDS=30V, ID=10A, RGEN=4.7Ω, 22 ns 42 13 Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss 1000 VDS=10V, VGS=0V f=1MHz Reverse Transfer Crss Capacitance Drain-source diode characteristics and maximum ratings b Drain-source diode forward voltage VSD VGS=0V, IS=18A (2) 200 pF 100 1.3 VER 1.2 V 2 ACE1632B N-Channel Enhancement Mode Field Effect Transistor Note: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. 2. Pulse Test: Pulse Width≦300µs, Duty Cycle≦2.0% Typical Performance Characteristics (N-Channel) VER 1.2 3 ACE1632B N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 4 ACE1632B N-Channel Enhancement Mode Field Effect Transistor Packing Information TO-252 Units: mm VER 1.2 5 ACE1632B N-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 6