ACE3401D P-Channel Enhancement Mode Field Effect Transistor Description This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package Excellent thermal and electrical capabilities. Features VDS(V)=-30V, ID=-3A RDS(ON)<63mΩ @ VGS=-10V Voltage controlled p-channel small signal switch High density cell design for low RDS(ON) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±12 V Drain Current TA=25 OC O TA=70 C ID -3 -2.4 A Drain Current (Pulse) IDM -30 A Continuous Power Dissipation PD 500 mW Operating and Storage Temperature Range TJ,TSTG -55 to 150 O C Packaging Type SOT-23-3L D 3 1 SOT-23-3 Description 1 Gate 2 Source 3 Drain 2 G S Ordering information ACE3401D XX + H Halogen - free Pb - free BM : SOT-23-3 VER 1.2 1 ACE3401D P-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics O TA=25 C unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Off characteristics Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V -1 uA Gate-Body Leakage, Forward IGSSF VGS=-20V -100 nA Gate-Body Leakage, Reverse IGSSR VGS=20V 100 nA On characteristics Static Drain-Source On-Resistance Gate Threshold Voltage RDS(ON) VGS(th) VGS=-10V, ID=-4.2A 63 VGS=-4.5V, ID=-4A 75 VGS=-2.5V, ID=-1A 120 VDS=VGS, ID=-250uA Switching characteristics Turn-On Delay Time Td(on) Turn-On Rise Time tf Turn-Off Delay Time td(off) Turn-Off Fall Time tf Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -1.0 -1.3 V (3) 6.5 VDD=-15V,RL=3.6Ω VGS=-10V, RGEN=6Ω 3.5 ns 40 13 Dynamic characteristics Input Capacitance -0.7 mΩ (3) VDS=-30V, VGS=0V f=200KHz 600 85 pF 566 Drain-source diode characteristics and maximum ratings Body Diode Forward Voltage VSD VSD=0V, IS=-1A -0.78 -1 V Note: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0% VER 1.2 2 ACE3401D P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 3 ACE3401D P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 4 ACE3401D P-Channel Enhancement Mode Field Effect Transistor Packing Information SOT-23-3L Unit: mm VER 1.2 5 ACE3401D P-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 6