ACE636B Common Drain Dual N-Channel Enhancement Mode Field Effect Description Advanced trench process technology. High Density Cell Design For Ultra Low On-Resistance. High Power and Current handing capability. Fully Characterized Avalanche Voltage and Current. Small Surface Mount Package Features VDS 20V, ID =6A RDS(ON)=22mΩ @VGS=4.5V RDS(ON)=30mΩ @VGS=2.5V For a single mosfet Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Drain Current (Note 1), Continuous ID 6 A Total Power Dissipation (Note1) PD 650 mW Operating and Storage Temperature Range TJ/TSTG -55/150 O C Note: Mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Packaging Type SOT-23-6L VER 1.2 1 ACE636B Common Drain Dual N-Channel Enhancement Mode Field Effect Ordering information ACE636B XX + H Halogen - free Pb - free GM : SOT-23-6L Electrical Characteristics TA=25℃, unless otherwise noted. Parameter Symbol Conditions Min. Typ. Max. Unit Off characteristics (Note 2) Drain-Source Breakdown Voltage Gate Leakage Current Zero Gate Voltage Drain Current V(BR)DSS VGS=0V, ID=250 uA 20 V IGSS VDS=0V,VGS=±12V ±100 uA IDSS VDS=20V, VGS=0V 1 uA 1.2 V On characteristics Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA 0.6 Forward Transconductance GFS VDS=10V, ID=6A 7 Static Drain-Source On-Resistance RDS(ON) 13 S VGS=4.5V, ID=6A 22 50 VGS=2.5V, ID=5.2A 30 65 0.77 1 mΩ Drain-Source Diode Characteristics And Maximum Ratings Diode Forward Voltage VSD IS=2A, VGS=0V 0.5 V Switching characteristics Turn-On Delay Time td(on) Turn-Off Delay Time td(off) RG=6Ω, VDD=10V, VGEN=4.5V, ID=1A 18 nS 25 Dynamic characteristics Input Capacitance Ciss 562 Output Capacitance REVERSE Transfer Capacitance Coss Crss 75 Total Gate Charge QG 4.86 Gate-Source Charge QGS Gate-Drain QGD VGS=0V, VDS=8V, f=1MHz VDS=10V, ID=6A, VGS=4.5V 106 pF 0.92 nC 1.4 Note: 2. Short duration test pulse used to minimize self-heating effect. VER 1.2 2 ACE636B Common Drain Dual N-Channel Enhancement Mode Field Effect Typical Performance Characteristics VER 1.2 3 ACE636B Common Drain Dual N-Channel Enhancement Mode Field Effect Packing Information SOT-23-6L Unit: mm VER 1.2 4 ACE636B Common Drain Dual N-Channel Enhancement Mode Field Effect Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 5