ACE2303B P-Channel Enhancement Mode Field Effect Transistor Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features VDS=-30V ID=-3.6A RDS(ON) 58mΩ @ VGS=-10V RDS(ON) 87mΩ @ VGS=-4.5V High density cell design for low RDS(ON) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current Power Dissipation Continuous Pulsed(1) 25 OC ID PD -3.6 -10 1.4 Operating and Storage Temperature Range TJ,TSTG -55 to 150 A W O C Packaging Type SOT-23-3L 3 SOT-23-3L Description 1 1 Gate 2 Source 3 Drain 2 Ordering information ACE2303B XX + H Halogen - free Pb - free BM : SOT-23-3L VER 1.2 1 ACE2303B P-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics O TA=25 C unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Off characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V -1 uA Gate-Body Leakage, Forward IGSSF VGS=+20V, VDS=0V 100 nA Gate-Body Leakage, Reverse IGSSR VGS=-20V, VDS=0V -100 nA On characteristics -30 V (2) VGS=-4.5V, ID=-3A 69 87 VGS=-10V, ID=-4.1A 48 58 -1 -1.6 -2.0 4 6 Static Drain-Source On-Resistance RDS(ON) Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA Forward Transconductance gFS VDS=-5V, ID=-2.8A mΩ V S (3) Switching characteristics Turn-On Delay Time Td(on) Turn-On Rise Time tf Turn-Off Delay Time td(off) Turn-Off Fall Time tf 20 VDD=-6V,RL=6Ω ID=-1A, VGEN=-4.5V RG=6Ω Ciss Output Capacitance Coss Feedback Capacitance Crss 65 ns 45 Dynamic characteristics Input Capacitance 10 (3) VDS=-6V, VGS=0V f=1.0MHz Drain-source diode characteristics and maximum ratings Drain-Source Diode Forward IS Current(4) Drain-Source Diode Forward VSD IS=-1A,VGS=0V -0.6 Voltage(2) 680 72 pF 58 -0.8 -1.35 A -1 V Note: 1. Pulse width limited by maximum junction temperature 2. Pulse test: PW≦300us, duty cycle≦2% 3. Guaranteed by design, not subject to production testing. 4. Surface Mounted on FR4 Board, t < 5 sec. VER 1.2 2 ACE2303B P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 3 ACE2303B P-Channel Enhancement Mode Field Effect Transistor Packing Information SOT-23-3L Unit: mm VER 1.2 4 ACE2303B P-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 5