Data Sheet 10V Drive Nch MOSFET RCX120N20 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TO-220FM φ3.2 10.0 4.5 1.2 1.3 14.0 2.5 8.0 15.0 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 12.0 2.8 0.8 2.54 2.54 2.6 0.75 (1) (2) (3) Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) RCX120N20 Inner circuit Bulk 500 Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage Drain current Source current (Body Diode) Continuous Pulsed Continuous VGSS ID *3 IDP *1 IS *3 Pulsed ISP IAS Avalanche current *1 *2 Power dissipation EAS *2 PD *4 Channel temperature Range of storage temperature Tch Tstg Avalanche energy ∗1 (1) Gate (2) Drain (3) Source Limits Unit 200 30 12 V V A 48 12 48 A A A 6.0 11.6 40 A mJ W 150 55 to 150 C C Limits 3.125 Unit C / W (1) (2) (3) 1 BODY DIODE *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, T ch=25°C *3 Limited only by maximum channel temperature allowed. *4 TC=25°C Thermal resistance Parameter Channel to Case Symbol Rth (ch-c)* * T C=25°C * Limited only by maximum channel temperature allowed. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.11 - Rev.A Data Sheet RCX120N20 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit - - 100 nA VGS=30V, VDS=0V 200 - - V ID=1mA, VGS=0V IGSS Drain-source breakdown voltage V(BR)DSS Conditions IDSS - - 10 A VDS=200V, VGS=0V VGS (th) 3.25 - 5.25 V VDS=10V, ID=1mA RDS (on)* - 250 325 l Yfs l* 2.75 5.5 - S VDS=10V, ID=6.0A Input capacitance Ciss - 740 - pF VDS=25V Output capacitance Coss - 57 - pF VGS=0V Reverse transfer capacitance Crss - 26 - pF f=1MHz Turn-on delay time td(on) * - 20 - ns VDD 100V, ID=6.0A tr * - 33 - ns VGS=10V Turn-off delay time td(off) * - 27 - ns RL=16.67 Fall time tf * Qg * Qgs * Qgd * - 11 - ns RG=10 - 15 - nC VDD 100V, ID=12A - 6 6 - nC nC VGS=10V Min. - Typ. - Max. 1.5 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Total gate charge Gate-source charge Gate-drain charge m ID=6.0A, VGS=10V *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Unit V Conditions Is=12A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.11 - Rev.A Data Sheet RCX120N20 Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 3 12 Ta=25°C Pulsed Ta=25°C Pulsed VGS=10.0V 2.5 VGS=10.0V VGS=7.0V 8 Drain Current : ID [A] 2 Drain Current : ID [A] VGS=8.0V 10 VGS=8.0V 1.5 VGS=6.5V 1 6 VGS=7.0V 4 VGS=6.0V 0.5 VGS=6.5V 2 VGS=6.0V VGS=5.5V 0 0 0 0.2 0.4 0.6 0.8 1 0 2 Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics 8 10 10 VDS=10V pulsed VDS=10V ID=1mA pulsed 8 Gate Threshold Voltage : VGS(th) [V] 10 Drain Currnt : ID [A] 6 Fig.4 Gate Threshold Voltage vs. Channel Temperature 100 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.1 0.01 6 4 2 0 0.001 0 1 2 3 4 5 6 7 8 9 -50 10 -25 0 25 50 75 100 125 150 Channel Temperature : T ch [℃] Gate-Source Voltage : VGS [V] Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 10000 Static Drain-Source On-State Resistance : RDS(on) [mΩ] VGS=10V pulsed Static Drain-Source On-State Resistance : RDS(on) [mΩ] 4 Drain-Source Voltage : VDS [V] Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 1000 100 VGS=10V pulsed 800 600 ID=12A 400 ID=6A 200 10 0 0.1 1 10 100 -50 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] Drain Current : ID [A] 3/5 2011.11 - Rev.A Data Sheet RCX120N20 Fig.8 Source Current vs. Source-Drain Voltage Fig.7 Forward Transfer Admittance vs. Drain Current 100 10 VDS=10V pulsed VGS=0V pulsed Source Current : IS [A] Forward Transfer Admittance Yfs [S] 10 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 1 0.1 0.01 0.01 0.01 0.1 1 10 100 0.0 0.5 Drain Current : ID [A] 1.0 1.5 Source-Drain Voltage : VSD [V] Fig.10 Switching Characteristics Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1000 10000 VDD≒100V VGS=10V RG=10Ω Ta=25°C Pulsed 800 1000 ID=12A Switching Time : t [ns] Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=25°C Pulsed ID=6A 600 400 tf td(off) 100 td(on) 10 tr 200 1 0 0 2 4 6 8 10 12 14 16 18 0.01 20 0.1 Gate-Source Voltage : VGS [V] Fig.11 Dynamic Input Characteristics 10 100 Fig.12 Typical Capacitance vs. Drain-Source Voltage 10000 20 Ta=25°C f=1MHz VGS=0V Ta=25°C VDD=100V ID=12A Pulsed 1000 15 Capacitance : C [pF] Gate-Source Voltage : VGS [V] 1 Drain Current : ID [A] 10 Ciss 100 Coss 10 5 Crss 1 0 0 5 10 15 20 25 0.01 30 1 10 100 1000 Drain-Source Voltage : VDS [V] Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 4/5 2011.11 - Rev.A Data Sheet RCX120N20 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 L IAS 2 V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 5/5 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A