ROHM ZDS020N60

Data Sheet
10V Drive Nch MOSFET
ZDS020N60
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
SOP8
Features
1) Low on-resistance.
2) High-speed switching.
3) Wide SOA.
(8)
(5)
(1)
(4)
 Application
Switching
 Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
ZDS020N60
 Inner circuit
Taping
TB
2500

 Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
Unit
600
30
0.63
V
V
A
*1
2.5
0.63
A
A
2.5
2
A
W
Tch
Tstg
150
55 to 150
C
C
Symbol
Rth (ch-a)*
Limits
62.5
Unit
C / W
VDSS
Gate-source voltage
Source current
(Body Diode)
Continuous
VGSS
ID
Pulsed
Continuous
IDP
IS
Pulsed
ISP
*1
PD
*2
Power dissipation
Channel temperature
Range of storage temperature
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
Limits
Drain-source voltage
Drain current
(8)
(7)
(6)
(5)
(2)
(3)
(4)
∗1
(1)
1 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
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© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.08 - Rev.A
Data Sheet
ZDS020N60
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
IGSS
-
-
100
nA
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Conditions
VGS=30V, VDS=0V
600
-
-
V
ID=1mA, V GS=0V
IDSS
-
-
100
A
VDS=600V, VGS=0V
VGS (th)
2.0
-
4.0
V
VDS=10V, ID=1mA
RDS (on)*
-
4.4
5.0

ID=0.5A, VGS=10V
l Yfs l*
0.05
0.5
-
S
ID=0.5A, VDS=10V
Input capacitance
Ciss
-
310
-
pF
VDS=10V
Output capacitance
Coss
-
145
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
40
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
25
-
ns
ID=600mA, VDD 200V
tr *
-
20
-
ns
VGS=10V
td(off) *
-
65
-
ns
RL=333
Rise time
Turn-off delay time
tf *
-
65
-
ns
RG=50
Total gate charge
Fall time
Qg *
-
12
20
nC
ID=600mA, VDD 450V
Gate-source charge
Qgs *
Qgd *
-
3
5
-
nC
nC
VGS=10V
Gate-drain charge
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
-
Typ.
-
Max.
1.5
Unit
V
Conditions
Is=1A, VGS=0V
*Pulsed
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© 2011 ROHM Co., Ltd. All rights reserved.
2/5
2011.08 - Rev.A
Data Sheet
ZDS020N60
Electrical characteristic curves (Ta=25C)
Fig.2 Typical Output Characteristics (Ⅱ)
Fig.1 Typical Output Characteristics (Ⅰ)
0.3
2
Ta=25°C
pulsed
Ta=25°C
pulsed
VGS=10.0V
VGS=8.0V
VGS=6.0V
Drain Current : ID [A]
VGS=8.0V
0.2
Drain Current : ID [A]
1.5
VGS=10.0V
VGS=5.0V
0.1
VGS=6.0V
1
VGS=5.0V
0.5
VGS=4.0V
VGS=4.0V
0
0
0
0.2
0.4
0.6
0.8
1
0
2
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
8
10
10
VGS=10V
pulsed
VDS=10V
pulsed
Forward Transfer Admittance
Yfs [S]
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
1
0.1
0.01
0.1
1
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.01
10
0.1
Drain Current : ID [A]
1
10
Drain Current : ID [A]
Fig.5 Typical Transfer Characteristics
Fig.6 Source Current vs. Source-Drain Voltage
10
10
VDS=10V
pulsed
1
VGS=0V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Source Current : Is [A]
Drain Currnt : ID [A]
6
Fig.4 Forward Transfer Admittance vs. Drain Current
100
Static Drain-Source On-State Resistance
RDS(on) [W]
4
Drain-Source Voltage : VDS [V]
Drain-Source Voltage : VDS [V]
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
0.01
0.001
0.01
0.0
2.0
4.0
6.0
8.0
0.0
Gate-Source Voltage : VGS [V]
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© 2011 ROHM Co., Ltd. All rights reserved.
0.5
1.0
1.5
2.0
Source-Drain Voltage : VSD [V]
3/5
2011.08 - Rev.A
Data Sheet
ZDS020N60
Fig.8 Switching Characteristics
Fig.7 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
10000
10
VDD≒200V
VGS=10V
RL=333W
Ta=25°C
Pulsed
8
td(off)
ID=0.3A
Switching Time : t [ns]
Static Drain-Source On-State Resistance
RDS(on) [W]
Ta=25°C
pulsed
ID=0.5A
6
4
1000
tf
100
td(on)
10
0
0
2
4
6
8
0.01
10
0.1
1
10
Drain Current : ID [A]
Gate-Source Voltage : VGS [V]
Fig.10 Typical Capacitance vs. Drain-Source Voltage
Fig.9 Dynamic Input Characteristics
10000
10
Ta=25°C
VDD=450V
ID=0.6A
Pulsed
Ta=25°C
f=1MHz
VGS=0V
1000
Capacitance : C [pF]
8
Gate-Source Voltage : VGS [V]
tr
2
6
4
Ciss
100
Coss
10
2
Crss
0
1
0
2
4
6
8
10
12
0.01
Total Gate Charge : Qg [nC]
0.1
1
10
100
1000
10000
Drain-Source Voltage : VDS [V]
Fig.11 Maximum Safe Operating Area
10
Operation in this area is limited by RDS(on)
(VGS = 10V)
Drain Current : ID [ A ]
1
PW = 100μs
PW = 1ms
0.1
PW = 10ms
0.01
Ta=25°C
Single Pulse
Mounted on a recommended land.
(20mm × 20mm × 0.8mm)
DC Operation
0.001
0.1
1
10
100
1000
Drain-Source Voltage : VDS [ V ]
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© 2011 ROHM Co., Ltd. All rights reserved.
4/5
2011.08 - Rev.A
Data Sheet
ZDS020N60
 Measurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
ton
Fig.1-1 Switching Time Measurement Circuit
90%
td(off)
tr
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
ID
VDS
RL
D.U.T.
IG(Const.)
RG
Qg
VGS
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
 Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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© 2011 ROHM Co., Ltd. All rights reserved.
5/5
2011.08 - Rev.A
Notice
Notes
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More detail product informations and catalogs are available, please contact us.
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http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A