Medium Power Transistor (60V, 2A) 2SD2391 Dimensions (Unit : mm) Features 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SB1561. MPT3 1.5 2.5 4.0 0.5 4.5 1.6 (2) (3) 1.0 (1) 0.5 0.4 1.5 0.4 0.4 1.5 3.0 (1)Base (2)Collector (3)Emitter Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit VCBO VCEO 60 60 6 2 6 V V V A A Collector-base voltage Collector-emitter voltage Emitter-base voltage VEBO Collector current IC Collector power dissipation PC 0.5 2 W Tj Tstg 150 −55 to +150 °C °C Junction temperature Storage temperature ∗1 ∗2 + + ∗1 Single pulse, Pw=10ms ∗2 When mounted on a 40 40 0.7mm ceramic board. Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO 60 60 − − − − V V IEBO 6 − − − − − − 0.1 0.1 V μA μA VCE(sat) − 0.13 0.35 IC/IB=1A/50mA hFE1 120 − 270 V − hFE2 45 − − − Transition frequency fT Output capacitance Cob − − 210 21 − − MHz pF VCE/IC=−2V/−1.5A VCE=2V, IE=−0.5A, f=100MHz VCB=10V, IE=0A, f=1MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage ICBO DC current transfer ratio Conditions IC=50μA IC=1mA IE=50μA VCB=50V VEB=5V ∗ VCE/IC=−2V/−0.5A ∗ ∗ Measured using pulse current Packaging specifications and hFE Type 2SD2391 Package hFE Marking Code Basic ordering unit (pieces) MPT3 Q DT∗ T100 1000 ∗Denotes hFE www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.12 - Rev.A 2SD2391 Data Sheet Electrical characteristic curves 5 14mA 10mA 8mA 6mA 0.8 4mA 0.4 0.0 2mA IB=0mA 0 1 2 3 100m 50m 20m 10m 5m 2m 1m 0 Ta=25°C 4 5 0.2 0.4 0.6 0.8 1.0 1.2 VCE=5V 100 2V 1V 50 20 10 5 2 1 10m 20m 50m 100m 200m 500m 1 2 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Fig.2 Grounded emitter propagation characteristics 200 Ta=25°C VCE=2V 500 200 IC/IB=20 500 200 100 Ta=100°C 50 25°C −40°C 20 10 5 2 1 5m 10m 20m 50m 100m 200m 500m 1 2 5 −2 EMITTER CURRENT : IE (A) Fig.7 Gain bandwidth product vs. emitter current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Cib 200 100 Cob 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.8 Iutput capacitance vs. voltage 2/2 10 Fig.3 DC current gain vs. collector current ( Ι ) 1000 Ta=25°C 500 200 100 50 IC/IB=50 20 20 10 10 5 2 1 5m 10m 20m 50m100m 200m 500m 1 2 5 COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) 50 20 10 Ic max(Pulse) PW 5 =1 00 2 1 m s ms 2 Ta=25°C f=1MHz IE=0A IC=0A 500 5 0m 5 1000 2 500m 200m 100m DC 10 −1 1000 50m 100m 200m 500m 1 COLLECTOR CURRENT : IC (A) =1 PW s 20 −100m 5 =1 50 −10m 10 Pw 100 1 −2m 20 1 10m 20m Fig.5 Collector-emitter saturation voltage vs. collector current ( Ι ) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 1000 −40°C 50 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ΙΙ ) 25°C 100 1.4 1.6 Fig.1 Grounded emitter output characteristics Ta=25°C 200 2 BASE TO EMITTER VOLTAGE : VBE (V) 500 DC CURRENT GAIN : hFE 200m COLLECTOR TO EMITTER VOLTAGE : VCE (V) 1000 TRANSITION FREQUENCY : fT (MHz) 1 500m COLLECTOR CURRENT : lC (A) 1.2 Ta=100°C DC CURRENT GAIN : hFE 1.6 VCE=2V 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 12mA 1000 VCE=2V 2 0°C 25°C −40°C COLLECTOR CURRENT : lC (A) mA 16mA 18 Ta=1 0 A m 20 COLLECTOR CURRENT : IC (A) 2.0 50m 20m Ta=25°C Single pulse 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area 2009.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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