ROHM 2SB1561_09

Medium Power Transistor (−60V, −2A)
2SB1561
Dimensions (Unit : mm)
Features
1) Low saturation voltage , typically
VCE (sat) = −0.15V at IC / IB = −1A / −50mA.
2) Collector-emitter voltage = −60V
3) Pc = 2W (on 40400.7mm ceramic board).
4) Complements the 2SD2391.
MPT3
0.5
4.5
1.6
2.5
4.0
1.5
(2)
(3)
1.0
(1)
0.5
0.4
1.5
(1)Base
0.4
0.4
1.5
3.0
(2)Collector
(3)Emitter
Absolute maximum ratings (Ta=25C)
Symbol
Limits
Unit
VCBO
VCEO
−60
−60
V
V
VEBO
IC
ICP
−6
−2
−6
V
A
Collector power dissipation
PC
0.5
2
Junction temperature
Storage temperature
Tj
150
Tstg
−55 to +150
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
A
W
∗1
∗2
°C
°C
+
+
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40 40 0.7mm ceramic board.
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Symbol
Min.
Typ.
Max.
Unit
BVCBO
BVCEO
BVEBO
−
−
−
−
−
−
−
−0.1
V
V
V
μA
IC=−50μA
IC=−1mA
IE=−50μA
ICBO
−60
−60
−6
−
IEBO
−
−
−0.1
μA
VCE(sat)
−
−0.15
−0.35
VEB=−5V
IC/IB=−1A/−50mA
hFE1
120
−
270
V
−
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
hFE2
45
−
−
−
Transition frequency
fT
−
200
−
MHz
Output capacitance
Cob
−
23
−
pF
Conditions
VCB=−50V
∗
VCE/IC=−2V/−0.5A
VCE/IC=−2V/−1.5A
VCE=−2V, IE=0.5A, f=100MHz
∗
VCB=−10V, IE=0A, f=1MHz
∗ Measured using pulse current
Packaging specifications and hFE
Type
2SB1561
Package
hFE
Marking
Code
Basic ordering unit (pieces)
MPT3
Q
BL∗
T100
1000
∗Denotes hFE
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/2
2009.12 - Rev.A
2SB1561
Data Sheet
 Electrical characteristic curves
0.0
0
−1
−2
−3
−4
−5
−0.4
−0.8
−1.2
Fig.2 Grounded emitter propagation
characteristics
200
VCE= −5V
100
50
−2V
−1V
20
10
5
2
1
−5m −10m−100m
−100m
−1
−5
COLLECTOR CURRENT : IC (A)
Ta=100°C
25°C
−40°C
−10
−5
−2
−1
−5m −10m−100m
−100m
−1
−5
2
2
EMITTER CURRENT : IE (A)
Fig.7 Gain bandwidth product
vs. emitter current
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c 2009 ROHM Co., Ltd. All rights reserved.
○
Cib
200
100
Cob
50
20
10
5
2
1
−0.1
−1
−10
−100
COLLECTOR TO BASE VOLTAGE : VCE (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.8 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
2/2
−5
Fig.3 DC current gain vs.
collector current ( Ι )
−1000
Ta=25°C
−500
−200
−100
IC/IB=50
−50
20
10
−20
−10
−5
−2
−1
−5m −10m−100m
−100m
−1
−5
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation
voltage vs. collector current ( ΙΙ )
50
20
10 Ic max(Pulse)
PW
5
=1
00
2
1
m
s
ms
5
Ta=25°C
f=1MHz
IE=0A
IC=0A
500
−1
500m
200m
100m
DC
10
1000
−100m
COLLECTOR CURRENT : IC (A)
0m
20
50m 100m200m 500m 1
5
=1
PW s
50
5m 10m 20m
10
=1
Pw
100
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
200
1
2m
−200
−20
20
1
−5m −10m−100m
Fig.5 Collector-emitter saturation
voltage vs. collector current ( Ι )
Ta=25°C
VCE=−2V
500
IC/IB=20
−500
−50
50
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain
vs. collector current ( ΙΙ )
1000
−1000
−100
100
−1.6
Fig.1 Grounded emitter output
characteristics
Ta=25°C
Ta=100°C
25°C
−40°C
200
2
−2m
−1m
0
BASE TO EMITTER VOLTAGE : VBE (V)
500
DC CURRENT GAIN : hFE
−0.01
−5m
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
1000
TRANSITION FREQUENCY : fT (MHz)
DC CURRENT GAIN : hFE
−0.4
−0.02
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
IB=−2mA
−0.1
−0.05
COLLECTOR CURRENT : lC (A)
−0.8
−0.2
−40°C
−4mA
−1
0°C
−1.2
VCE=2V
500
−0.5
25°C
A
−6m
1000
VCE= −2V
−2
Ta=1
0
−1.6
−5
A mA
A
8m 16
2m
−1 − mA −1
mA
4
1
−
−10
A
−8m
COLLECTOR CURRENT : IC (A)
mA
0
−2
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
COLLECTOR CURRENT : lC (A)
−2.0
50m
20m Ta=25°C
Single pulse
10m
0.2 0.5 1 2
5
10 20
50 100 200 500
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area
2009.12 - Rev.A
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