Medium Power Transistor (60V, 1A) 2SD1834 Dimensions (Unit : mm) Features 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance. MPT3 1.5 2.5 4.0 0.5 4.5 1.6 Inner circuit (2) (3) 1.0 (1) C 0.5 0.4 1.5 0.4 0.4 1.5 3.0 (1)Base (2)Collector B (3)Emitter E B : Base C : Collector E : Emitter Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Symbol Limits Unit VCBO VCES VEBO 60 60 V V 7 1 V A(DC) 2 A(Pulse) Emitter-base voltage Collector current IC Collector power dissipation PC Junction temperature Storage temperature Tj 2 150 Tstg −55 to +150 0.5 ∗2 ∗1 W ∗3 °C °C ∗1 Single pulse Pw=100ms ∗2 RBE=0Ω ∗3 Mounted on a 40× 40× t 0.7mm ceramic substrate Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO 60 60 7 − − − − − − V V V IC=50μA IC=100μA , RBE=0Ω IE=50μA ICBO − − 2000 − IEBO hFE − − 1 1 − μA μA − VCB=60V VEB=6V VCE/IC=3V/500mA VCE(sat) − 0.9 1.5 V IC/IB=500mA/500μA Transition frequency fT − 150 − MHz Output capacitance Cob − 7 − pF Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Conditions ∗ VCE=5V , IE= −10mA , f=100MHz VCE=10V , IE=0A , f=1MHz ∗ Measured using pulse current. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/2 2010.02 - Rev.B 2SD1834 Data Sheet Packaging specifications and hFE Type 2SD1834 Package hFE Marking MPT3 2k~ Code Basic ordering unit (pieces) T100 1000 DE∗ ∗Denotes hFE Electrical characteristics curves 1 10μA 9μA 8μA 7μA 0.4 0.3 6μA 5μA 4μA 0.2 3μA 2μA 0.1 0 1 2 3 0.2 0.1 0.05 0.02 1μA IB=0μA 0 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) IC/IB=1000 1 500 0.5 0.2 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2 COLLECTOR CURRENT : IC (A) Fig.4 Collector-emitter saturation voltage vs. collector current www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ VCE=5V 5k 3V 0.8 1.2 1.6 2.0 2.4 2.8 0.01 0.02 50 Ta=25°C f=1MHz IE=0A 20 10 5 2 1 0.5 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.5 Collector output capacitance vs. collector-base voltage 2/2 0.05 0.1 0.2 0.5 1 2 5 COLLECTOR CURRENT : IC (A) Fig.3 DC current gain vs. collector current 2 Ic Max Pulse 1 Ic Max s 0m s =1 m Pw 00 =1 Pw 2 10k 0.5 DC COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 5 0.4 Fig.2 Ground emitter propagation characteristics Fig.1 Ground emitter output characteristics Ta=25°C 20k BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) 10 50k 1k 0 5 100k 2k 0.01 4 Ta=25°C 200k COLLECTOR CURRENT : IC (A) PC=0.5W 500k Ta=25°C VCE=3V 0.5 DC CURRENT GAIN : hFE Ta=25°C COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 0.5 0.2 0.1 Ta=25°C 0.05 ∗Single nonrepetitive pulse 0.5 1 2 5 10 20 50 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.6 Safe operating area 2010.02 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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