LITTELFUSE 2SD1866TV2

Medium Power Transistor
(Motor, Relay drive) (6010V, 2A)
2SD2143
1.5
(2)
5.1
2.3
(1)
5.5
6.5
0.75
 Dimensions (Unit : mm)
0.9
Features
1) Built-in zener diode between collector and base.
2) Strong protection against reverse surges due to "L"
loads.
3) Built-in resistor between base and emitter.
4) Built-in damper diode.
0.65
2.3
(3)
0.9
C0.5
VEBO
Collector current
IC
Collector power dissipation
PC
Junction temperature
Storage temperature
Tj
Tstg
Unit
Limits
60±10
60±10
6
2
3 ∗1
V
V
V
A (DC)
A (Pulse)
0.8Min.
1.5
2.3
VCBO
VCEO
1.0
Symbol
0.5
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
0.5
Absolute maximum ratings (Ta=25C)
2.5
9.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
ROHM : CPT3
EIAJ : SC-63
1
W
10
W (Tc=25°C)
150
−55 to +150
°C
°C
∗1 Single pulse Pw=100ms
Packaging specifications and hFE
2SD2143
Type
Package
CPT3
1k to 10k
−
hFE
Marking
Code
Basic ordering unit (pieces)
TL
2500
Inner circuit
C
B
R1
E : Emitter
B : Base
C : Collector
R2
E
R1
R2
3.5kΩ
300Ω
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
Min.
Typ.
Max.
Unit
BVCBO
BVCEO
−
−
−
−
−
−
80
70
70
1.0
3
1.5
hFE
fT
50
50
−
−
−
1000
−
10000
−
V
V
μA
mA
V
−
MHz
Cob
−
25
−
pF
ICBO
IEBO
VCE(sat)
Conditions
IC=50μA
IC=5mA
VCB=40V
VEB=5V
IC/IB=1A/1mA
∗
VCE=2V, IC=1A
VCE=5V, IE= −0.1A, f=30MHz
VCB=10V, IE=0A, f=1MHz
∗ Measured using pulse current.
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1/2
2012.01 - Rev.C
2SD2143
Data Sheet
Electrical characteristics curves
250μ
A
00μA
1.2
IB=2
1.0
0.8
0.6
0.4
0.2
0μA
20
IB=
1.2
1.0
0.8
0.6
0.4
1
0.5
0.2
0.1
0.05
0.01
0.2
0
1
2
3
4
5
2
4
6
8
10
0.001
0.5
1
1.5
2
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Groundede emitter output
characteristics ( Ι )
Fig.2 Grounded emitter output
characteristics ( ΙΙ )
Fig.3 Grounded emitter propagation
characteristics
10000
Ta=25°C
100
50
20
°C
25°C
00
200
100
C
200
500
=1
VCE=2V
1000
Ta
500
2000
5°
1000
−2
VCE=4V
2000
50
20
10
0.001
0.01
0.1 0.2 0.5 1 2
10
0.001
5 10
0.01
0.1 0.2 0.5 1 2
100
Ta=25°C
50
20
10
5
2
IC/IB=1000
1
500
0.5
0.2
5 10
0.01
0.1 0.2 0.5 1
2
5 10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain
vs. collector current ( Ι )
Fig.5 DC current gain
vs. collector current ( ΙΙ )
Fig.6 Collector-emitter saturation
voltage vs. collector current
25°C
0.01
0.1 0.2 0.5 1
2
5 10
10
5
0.05 0.1 0.2
0.5
1
2
5
10 20
50
S
100°C
0.5
200m
0m
1
20
Ic max (pulse)
DC
=1
Ta= −25°C
2
1
500m
Pw
2
50
5
1mS
5
100
Pw=
10
Ta=25°C
IE=0A
f=1MHz
S
m
00
=1
Pw
20
10
200
COLLECTOR CURRENT : Ic (A)
IC/IB=1000
50
COLLECTOR OUTPUT
CAPACITANCE : Cob (pF)
COLLECTOR CURRENT : IC (A)
100
0.2
VCE=2V
5000
DC CURRENT GAIN : hFE
5000
COLLECTOR SATURATION
VOLTAGE : VCE(sat)(V)
10000
DC CURRENT GAIN : hFE
A
0μ
25
1.4
0
COLLECTOR SATURATION
VOLTAGE : VCE(sat)(V)
VCE=2V
2
25˚C
300
1.4
400μA
1.6 350μA
−25˚C
μA
1.6
5
Ta=25°C
A
0μ
30
Ta=
100
˚C
500μA
1.8 450μA
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
2.0
Ta=25°C
500μA
450μA
400μA
1.8
COLLECTOR CURRENT : Ic (A)
2.0
100m
50m
20m
10m
5m
Ta=25°C
Single
2m Nonrepetitive
1m Pulse
0.1 0.2 0.5 1 2
5 10 20
50 100 200 500 1000
COLLECTOR CURRENT : IC (A)
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 Collector-emitter saturation
voltage vs. collector current
Fig.8 Collector output capacitance
vs. collector-base voltage
Fig.9 Safe operating area (A. S. O)
2SD2143 (CPT)
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c 2012 ROHM Co., Ltd. All rights reserved.
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2/2
2012.01 - Rev.C
Notice
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R1120A