RB491D Diodes Shottky barrier diode RB491D zApplication zExternal dimensions (Unit : mm) zLead size figure (Unit : mm) Low current rectification 2.9±0.2 各リードとも Each lead has same dimension 同寸法 ＋0.1 0.95 0.15 －0.06 ＋0.2 (3) 2.8±0.2 2.4 ＋0.1 0.4 －0.05 1.6－0.1 zFeatures 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. 1.0MIN. 0.8MIN. SMD3 (2) zStructure Silicon epitaxial planar (1) 0.95 0.8±0.1 0.95 0.3～0.6 0～0.1 zStructure 1.1±0.2 0.01 1.9±0.2 1.9 ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code zTaping dimensions (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 Symbol VRM VR Io IFSM Tj Tstg Limits 25 20 1 3 125 -40 to +125 3.2±0.1 8.0±0.2 3.2±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc)(*1) Junction temperature Storage temperature 0～0.5 φ1.05MIN 4.0±0.1 3.2±0.1 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 1.35±0.1 Unit V V A A ℃ ℃ (*1)Rating of per diode zElectrical characteristics (Ta=25°C) Parameter Symbol Min. VF Forward voltage IR Reverse current - Typ. - Max. 0.45 Unit V - 200 µA Conditions IF=1A VR=20V Rev.B 1/3 RB491D Diodes zElectrical characteristic curves (Ta=25°C) 1 1000 100000 Ta=25℃ Ta=-25℃ 0.01 1000 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 100 10 1 0.1 0 200 400 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 600 5 10 15 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 20 500 410 400 390 400 350 300 250 200 150 AVE:37.93uA 100 AVE:399.2m 180 170 160 150 140 130 120 100 IR DISPERSION MAP Ct DISPERSION MAP 20 RESERVE RECOVERY TIME:trr(ns) 1cyc Ifsm 8.3ms 10 AVE:11.1A Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 15 10 5 AVE:9.3ns PEAK SURGE FORWARD CURRENT:IFSM(A) 20 30 20 AVE:159.8pF 110 0 VF DISPERSION MAP Ifsm 15 8.3ms 8.3ms 1cyc 10 5 0 0 0 1 t 10 5 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Per chip Rth(j-a) Rth(j-c) 100 Mounted on epoxy board 10 IM=1mA 1ms IF=10mA FORWARD POWER DISSIPATION:Pf(W) Ifsm 100 1 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 20 15 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP IFSM DISRESION MAP 30 Ta=25℃ f=1MHz VR=0V n=10pcs 190 50 380 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 200 Ta=25℃ VR=20V n=30pcs 450 REVERSE CURRENT:IR(uA) Ta=25℃ IF=1A n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 420 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ 0.1 10000 0.001 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz Ta=125℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) Ta=75℃ D=1/2 DC 0.5 Sin(θ＝180) time 300us 1 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.B 2 2/3 RB491D Diodes 3 3 0.3 0.2 0.15 D=1/2 DC Sin(θ＝180) 0.05 2.5 Io 0A 0V t 2 D=1/2 1.5 T DC AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.25 0.1 Per chip Per chip Per chip VR D=t/T VR=10V Tj=125℃ 1 0.5 Io 0A 0V 2.5 t 2 DC T VR D=t/T VR=10V Tj=125℃ 1.5 D=1/2 1 0.5 Sin(θ＝180) Sin(θ＝180) 0 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 20 0 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.B 125 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1