RB550EA Diodes Schottky barrier diode RB550EA z Land size figure (Unit : mm) z External dimensions (Unit : mm) zApplications Low current rectification 2.9±0.1 ＋0.1 0.16±0.1 0.06 0.4 －0.05 Each 各リードとも同寸法 lead has same dimension zFeatures 1) Small mold type. (TSMD5) 2) Low VF, low IR. 3) High reliability. (5) 2.4 1.0 min. 0.8 (4) (2) 0.95 (3) 0～0.1 0.33±0.03 0.7±0.1 0.95 0.95 1.9 zStructure 1.0Max zConstruction Silicon epitaxial planar 0.35 0.45 TSMD5 0.85±0.1 1.9±0.2 0.7 0.95 0.3～0.6 ＋0.2 －0.1 1.6 (1) 2.8±0.2 0.45 0.35 ROHM : TSMD5 dot(year week factory) + day z Taping specifications (Unit : mm) φ1.55±0.05 2.0±0.05 0.3±0.1 3.2±0.08 3.5±0.05 3.2±0.08 5.5±0.2 0～0.5 φ1.1±0.1 4.0±0.1 3.2±0.08 8.0±0.2 1.75±0.1 4.0±0.1 1.1±0.08 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak （t=1msec) Junction temperature Storage temperature Limits 30 0.7 12 150 -40 to +150 Symbol VR Io IFSM Tj Tstg Unit V A A ℃ ℃ (*1) Rating of per diode. zElectrical characteristics (Ta=25°C, Rating of per diode.) Parameter Symbol VF1 Min. 0.39 Typ. 0.45 Max. 0.49 Unit V Reverse current IR1 IR2 - 1 5.0 30.00 50 µA µA ESD break down voltage ESD 15 - - KV Forward voltage Conditions IF=0.7A VR=10V VR=30V C=100PF,R=1.5KΩ Forwad and reverse : 1 times 1/3 RB550EA Diodes zElectrical characteristic curves (Ta=25°C) 100000 Ta=75℃ Ta=150℃ Ta=25℃ Ta=-25℃ 0.01 1000 Ta=75℃ 100 10 Ta=25℃ 1 Ta=-25℃ 0.1 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 600 10 5 10 15 20 25 1 30 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 490 460 450 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 470 20 15 10 AVE:3.141uA 5 180 170 160 150 140 130 120 VF DISPERSION MAP 100 Ct DISPERSION MAP IR DISPERSION MAP 30 20 8.3ms 20 15 AVE:15.1A 10 5 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm RESERVE RECOVERY TIME:trr(ns) 30 25 AVE:149.9pF 110 0 440 15 10 AVE:8.3ns 5 0 0 Ifsm Ifsm 15 8.3ms 8.3ms 8.3ms 8.3ms 1cyc 1cyc 10 5 0 1 trr DISPERSION MAP IFSM DISRESION MAP 1000 Ifsm t 20 15 10 5 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 IM=10mA 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 Mounted on epoxy board IF=0.2A 0.8 1ms time Rth(j-a) 300us 100 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) 25 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 30 30 Ta=25℃ f=1MHz VR=0V n=10pcs 190 Ta=25℃ VR=30V n=30pcs 25 REVERSE CURRENT:IR(nA) 480 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 200 30 Ta=25℃ IF=0.7A n=30pcs AVE:459.6mV PEAK SURGE FORWARD CURRENT:IFSM(A) 100 0.01 0.001 FORWARD VOLTAGE:VF(mV) f=1MHz Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ 0.1 1000 Ta=150℃ 10000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 1 D=1/2 0.6 Sin(θ＝180) DC 0.4 0.2 10 0.001 0 0.1TIME:t(s) 10 Rth-t CHARACTERISTICS 1000 0 0.5 1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 1.5 2/3 RB550EA Diodes 1.5 0A 0V DC AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.8 0.6 D=1/2 0.4 DC Sin(θ＝180) 0.2 t T D=1/2 1 Io VR D=t/T VR=15V Tj=150℃ 0.5 Sin(θ＝180) 0 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 1.5 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 Sin(θ＝180) 1 0.5 Io 0A 0V t T 0 0 DC D=1/2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1 0 25 50 VR D=t/T VR=15V Tj=150℃ 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1