RB471E Diodes Schottky barrier diode RB471E z Land size figure (Unit : mm) z External dimensions (Unit : mm) 2.9±0.2 Each lead has same dimension －0.05 0.45 0.35 0.35 0.45 0.6 (2) ＋0.2 －0.1 2.8±0.2 (1) 0.15±0.1 0.06 1.6 zFeatures 1) Small mold type. (SMD5) 2) High reliability. 0.3 ＋0.1 各リードとも同寸法 2.4 0.8MIN. 1.0MIN. zApplications Low current rectification 0.95 0.95 zConstruction Silicon epitaxial planar (4) (3) 0.8±0.1 1.9±0.2 0.95 0.3～0.6 0～0.1 (5) 0.95 SMD5 1.9 z Structure 1.1±0.2 0.1 ROHM : SMD5 JEITA : SC-74A week code z Taping specifications (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 φ1.0MIN 4.0±0.1 3.2±0.1 3.2±0.1 8.0±0.2 5.5±0.2 0～0.5 3.2±0.1 3.5±0.05 1.75±0.1 4.0±0.1 1.35±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak （60Hz・1cyc） (*1) Junction temperature Storage temperature Limits 40 40 0.1 1 125 -40 to +125 Symbol VRM VR Io IFSM Tj Tstg Unit V V A A ℃ ℃ (*1) Rating of per diode zElectrical characteristics (Ta=25°C) Parameter Forward voltage Symbol VF1 Min. Typ. Max. Unit - - 0.55 V IF=100mA VF2 IF=10mA VR=10V VR=10V , f=1MHz Reverse current IR - - 0.34 30 V µA Capacitance between terminals Ct - - 6 pF Conditions Rev.B 1/3 RB471E Diodes zElectrical characteristic curves (Ta=25°C) 10000 REVERSE CURRENT:IR(uA) Ta=75℃ 1 Ta=25℃ Ta=-25℃ 0.1 0.01 100 200 300 400 500 Ta=75℃ 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 0 460 450 440 AVE:439.5mV 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 290 280 270 AVE:281.5mV 6 5 AVE:5.10pF 4 3 2 PEAK SURGE FORWARD CURRENT:IFSM(A) 7 10 AVE:2.548uA 5 30 Ifsm 1cyc 15 8.3ms 10 5 AVE:5.50A 0 0 Ct DISPERSION MAP 20 15 10 5 AVE:6.20ns 0 trr DISPERSION MAP 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 5 0 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 15 1cyc Ifsm 8.3ms 10 5 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 IFSM DISRESION MAP 15 0.1 15 IR DISPERSION MAP 1 10 20 0 20 Ta=25℃ f=1MHz VR=10V n=10pcs 8 Ta=25℃ VR=10V n=10pcs 25 VF DISPERSION MAP 10 9 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 Ta=25℃ IF=10mA n=30pcs 300 VF DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) 0 35 260 420 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 5 310 Ta=25℃ IF=100mA n=30pcs FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV) 470 10 1 0.01 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 430 f=1MHz REVERSE CURRENT:IR(uA) 0 1000 RESERVE RECOVERY TIME:trr(ns) FORWARD CURRENT:IF(mA) 10 100 Ta=125℃ Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 100 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board 10 IM=1mA 1ms 1 0.001 IF=10mA time 300us 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS Rev.B 1000 2/3 RB471E Diodes 0.1 0.3 0.07 Per chip 0.06 DC Sin(θ＝180) 0.04 0.02 0.05 Sin(θ＝180) 0.04 D=1/2 0.03 DC 0.02 0.01 0 0 0 0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.3 0.25 t 0.2 0.2 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 0.25 Io 0A 0V t DC 0.2 T VR D=t/T VR=15V Tj=125℃ 0.15 0.1 0.05 D=1/2 Sin(θ＝180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 Io 0A 0V Per chip AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D=1/2 REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.08 Per chip Per chip 0.06 T DC VR D=t/T VR=15V Tj=125℃ 0.15 D=1/2 0.1 Sin(θ＝180) 0.05 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1