RB480Y Diodes Schottky barrier diode RB480Y zApplications Low current rectification z Dimensions (Unit : mm) z Land size figure (Unit : mm) 0.5 0.13±0.05 (1) 1.0 0～0.1 EMD4 (2) 0.5 zConstruction Silicon epitaxial planar 1.55 (3) 1.2±0.1 (4) 1.6±0.1 1.6±0.05 zFeatures 1) Ultra small mold type. (EMD4) 2) Low IR 3) High reliability. 0.45 1.6±0.05 1.6±0.1 0.22±0.05 0.5 1.0±0.1 0.5±0.05 zStructure ROHM : EMD4 JEITA : SC-75A Size dot (year week factory) z Taping specifications (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 3.5±0.05 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage Average rectified forward current (*1) Forward current surge peak （60Hz・1cyc）（*1） Junction temperature Storage temperature 1.65±0.01 0～0.1 φ0.8±0.1 4.0±0.1 Symbol VR Io IFSM Tj Tstg 5.5±0.2 1.65±0.1 1PIN 1.65±0.1 1.7±0.05 8.0±0.2 1.75±0.1 4.0±0.1 0.65±0.1 Limits 30 100 1 125 -40 to +125 Unit V mA A ℃ ℃ (*1) Rating of per diode zElectrical characteristics (Ta=25°C) Parameter Symbol Min. VF1 VF2 Forward voltage VF3 Reverse current IR - Typ. - Max. 0.38 0.43 0.53 Unit V V V - 1 µA Conditions IF=1mA IF=10mA IF=100mA VR=10V Rev.C 1/3 RB480Y Diodes zElectrical characteristic curves (Ta=25°C) Ta=75℃ 10 Ta=25℃ 1 Ta=-25℃ 0.1 0.01 REVERSE CURRENT:IR(nA) 200 300 400 500 Ta=75℃ 10000 1000 Ta=25℃ 100 Ta=-25℃ 10 0 450 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 30 430 420 410 AVE:426.3mV σ:0.9486mV 20 800 700 600 500 400 300 AVE:100.5nA 200 Ta=25℃ f=1MHz VR=0V n=10pcs 40 30 20 10 100 AVE:430.7mV 400 30 50 Ta=25℃ VR=10V n=30pcs 900 REVERSE CURRENT:IR(nA) 440 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1000 Ta=25℃ Ta=25℃ VF=100mA IF=100mA n=30pcs n=30pcs 10 1 1 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD VOLTAGE:VF(mV) f=1MHｚ 100000 0.001 100 Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD CURRENT:IF(mA) 100 0 100 1000000 Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 AVE:28.2pF 0 0 Ct DISPERSION MAP VF DISPERSION MAP IR DISPERSION MAP 10 15 8.3ms 10 5 AVE:5.60A 0 10 Ifsm 8.3ms 8.3ms 1cyc 5 1 100 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 0.01 IF=100mA Per chip Per chip 1000 100 1ms time 300us Rth(j-a) Rth(j-c) D=1/2 0.2 Sin(θ＝180) DC 0.1 REVERSE POWER DISSIPATION:PR (W) 0.008 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 10 0.3 Mounted on epoxy board t 5 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP IM=10mA Ifsm 0 0 1 10000 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 20 0.006 DC D=1/2 0.004 Sin(θ＝180) 0.002 10 0.001 0 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.5 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.C 2/3 RB480Y Diodes 0.5 0A 0V DC Io t 0.3 T D=1/2 VR D=t/T VR=15V Tj=125℃ 0.2 0.1 Sin(θ＝180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 Per diode 0.4 Io 0A 0V 0.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) Per diode 0.4 t DC T 0.3 VR D=t/T VR=15V Tj=125℃ D=1/2 0.2 Sin(θ＝180) 0.1 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1