RF051UA1D Diodes Fast recovery diode RF051UA1D z Land size figure (Unit : mm) z External dimensions (Unit : mm) 1.9 0.95 0.95 2.9±0.1 0.4＋0.1 －0.05 zFeatures 1) Small power mold type. (TSMD6) 2) Very fast recovery. 3) High reliability 0.16±0.1 0.06 Each lead has same dimension 各リードとも同寸法 (6) (5) (4) zConstruction Silicon epitaxial planar (2) 0.95 1.0 min. 0.33±0.03 (3) 0.35 0.45 0.7 0～0.1 0.7±0.1 0.95 0.8 TSMD6 0.3～0.6 (1) 2.8±0.2 1.6 ＋0.2 －0.1 0.45 0.35 2.4 zApplications General rectification 0.85±0.1 1.9±0.2 1.0Max zStructure ROHM : TSMD6 dot (year week factory) + day z Taping specifications(Unit : mm) φ1.55±0.1 0 2.0±0.05 0.3±0.1 Limits 100 100 0.5 5 150 -55 to +150 Symbol VRM VR Io IFSM Tj Tstg 3.2±0.08 8.0±0.2 0～0.5 3.2±0.08 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repatitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature φ1.1±0.1 4.0±0.1 3.2±0.08 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 1.1±0.08 Unit V V A A ℃ ℃ (*1) Rating for a per diode zElectrical characteristics (Ta=25°C) Parameter Symbol Reverse current VF IR Min. - Typ. - Max. 0.98 10 Unit V µA Reverse recovery time trr - - 25 ns Forward voltage Conditions IF=0.5A VR=100V IF=0.5A,IR=1A,Irr=0.25*IR 1/3 RF051UA1D Diodes zElectrical characteristic curves (Ta=25°C) 1 1000000 Ta=150℃ 100000 Ta=125℃ 10000 Ta=75℃ 10 Ta=-25℃ Ta=150℃ 0.01 1000 Ta=25℃ 100 Ta=-25℃ 10 1 0.001 0 200 400 600 800 1000 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 20 40 60 80 100 0 AVE:880.2mV 800 700 600 500 400 300 AVE:147.6nA 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 880 870 Ta=25℃ VR=100V n=30pcs 900 890 7 6 5 4 3 2 100 1 0 IR DISPERSION MAP 50 Ct DISPERSION MAP 1000 RESERVE RECOVERY TIME:trr(ns) 30 45 40 1cyc Ifsm 30 AVE:3.13pF 0 VF DISPERSION MAP 35 Ta=25℃ f=1MHz VR=0V n=10pcs 8 200 860 8.3ms 25 20 15 10 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 AVE:5.30ns 5 Ifsm 100 8.3ms 8.3ms 1cyc 10 AVE:11.6A 5 0 0 1 1 trr DISPERSION MAP IFSM DISRESION MAP 10 IM=10mA 1000 IF=0.1A 1 t 100 10 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1ms time Per chip Rth(j-a) DC 0.8 300us 100 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 Ifsm 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board PEAK SURGE FORWARD CURRENT:IFSM(A) 30 10 1000 Ta=25℃ IF=0.5A n=30pcs 900 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 1 0 1200 910 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) Ta=25℃ 0.1 REVERSE CURRENT:IR(nA) f=1MHz f=1MHz Ta=75℃ Rth(j-c) 10 D=1/2 0.6 Sin(θ＝180) 0.4 0.2 1 0.001 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 0 0 0.5 1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2/3 RF051UA1D Diodes 1.5 1.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.04 REVERSE POWER DISSIPATION:PR (W) 0A 0V Per chip Per chip 0.03 Sin(θ＝180) D=1/2 0.02 DC 0.01 0 Io t 1 T DC VR D=t/T VR=50V Tj=150℃ D=1/2 0.5 Sin(θ＝180) 20 40 60 80 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 100 1 Io t T DC VR D=t/T VR=50V Tj=150℃ D=1/2 0.5 Sin(θ＝180) 0 0 0 0A 0V Per chip AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.05 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 15 10 AVE:4.40kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1