4V Drive Nch + Nch MOSFET MP6K31 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) MPT6 (Dual) Features 1) Built-in G-S Protection Diode. 2) Small Surface Mount Package (MPT6). 3) Low voltage drive. (4V) (6) (5) (4) (1) (2) (3) Application Switching Inner circuit Packaging specifications Type Package Code Basic ordering unit (pieces) Taping TR 1000 ○ MP6K31 (6) Absolute maximum ratings (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Drain-source voltage Source current (Body Diode) Symbol Limits Unit VDSS 60 V VGSS 20 V Continuous ID 2 A Pulsed Continuous IDP Is *1 8 1.2 A A Pulsed Isp *1 8 A Gate-source voltage Drain current (1) Power dissipation Channel temperature Range of storage temperature PD Tch Tstg *2 (5) (2) (4) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (6) (5) (4) (1) (2) (3) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain 2.0 W / TOTAL 1.4 W / ELEMENT 150 C 55 to +150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/6 2010.09 - Rev.A MP6K31 Data Sheet Electrical characteristics (Ta = 25C) <It is the same characteristics for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=20V, VDS=0V Gate-source leakage Drain-source breakdown voltage V (BR)DSS Conditions 60 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=60V, VGS=0V Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA Static drain-source on-state resistance * RDS (on) - 210 290 ID=2A, VGS=10V - 240 330 m ID=2A, VGS=4.5V - 255 350 Forward transfer admittance l Yfs l* 1.4 - - S ID=2A, VDS=10V Input capacitance Ciss - 110 - pF VDS=10V Output capacitance Coss - 28 - pF VGS=0V Reverse transfer capacitance Crss - 12 - pF f=1MHz Turn-on delay time td(on) * - 6 - ns ID=1A, VDD 30V tr * - 10 - ns VGS=10V td(off) * - 20 - ns RL=30 tf * - 9 - ns RG=10 Total gate charge Qg * - 2.0 - nC ID=2A, VDD 30V Gate-source charge Gate-drain charge Qgs * Qgd * - 0.8 0.4 - nC nC VGS=5V Zero gate voltage drain current Rise time Turn-off delay time Fall time ID=2A, VGS=4.0V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) <It is the same characteristics for Tr1 and Tr2.> Parameter Forward Voltage Symbol VSD * Min. Typ. Max. - - 1.2 Unit Conditions V Is=1.2A, VGS=0V *Pulsed www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/6 2010.09 - Rev.A MP6K31 Data Sheet Electrical characteristic curves (Ta = 25C) Typical Output Characteristics (Ⅱ) Typical Output Characteristics (Ⅰ) 2 2 VGS=10.0V Ta=25℃ pulsed VGS=10.0V VGS=4.5V VGS=4.5V VGS=3.0V VGS=4.0V VGS=4.0V Drain Current : ID [A] Drain Current : ID [A] VGS=3.0V VGS=2.8V 1 VGS=2.5V Ta=25℃ pulsed 0 0 0.2 0.4 0.6 0.8 VGS=2.8V 1 VGS=2.5V 0 1 0 2 Static Drain-Source On-State Resistance vs. Drain Current Ta=25℃ pulsed 1000 VGS=4.0V VGS=4.5V VGS=10V 100 10 VGS=10V pulsed 10 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 1000 100 0.1 1 10 0.01 Drain Current : ID [A] 1 10 Static Drain-Source On-State Resistance vs. Drain Current 10000 VGS=4.5V pulsed 0.1 Drain Current : ID [A] Static Drain-Source On-State Resistance vs. Drain Current Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 8 10 0.01 10000 6 Static Drain-Source On-State Resistance vs. Drain Current 10000 Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State e Resistance RDS(on) [mΩ] 10000 4 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [V] 1000 100 10 VGS=4V pulsed Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 1000 100 10 0.01 0.1 1 10 0.01 Drain Current : ID [A] www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 0.1 1 10 Drain Current : ID [A] 3/6 2010.09 - Rev.A MP6K31 Data Sheet Forward Transfer Admittance vs. Drain Current 10 Typical Transfer Characteristics VDS=10V pulsed VDS=10V pulsed 1 Drain Currnt : ID [A] Forward Transfer Admittance Yfs [S] 1 Ta=-25℃ Ta=25℃ Ta=75℃ Ta=125℃ Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 0.1 0.1 0.01 0.01 0.001 0.01 0.1 1 10 0.0 0.5 1.0 Drain Current : ID [A] Static Drain-Source On-Sttate Resistance RDS(on) [mΩ Ω] Source Current : Is [A] 600 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 0.1 0.01 3.0 3.5 Ta=25℃ pulsed 500 ID=1.0A 400 ID=2.0A 300 200 100 0 0.0 0.5 1.0 1.5 2.0 0 2 Switching Characteristics 1000 Gate-Source Voltage : VGS [V] 10 td(on) 8 10 Ta=25℃ VDD=30V ID=2A Pulsed 8 td(off) 100 6 Dynamic Input Characteristics 10 VDD≒30V VGS=10V RG=10Ω Ta=25℃ Pulsed tf 4 Gate-Source Voltage : VGS [V] Source-Drain Voltage : VSD [V] Switching Time : t [ns] 2.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage VGS=0V pulsed 1 2.0 Gate-Source Voltage : VGS [V] Source Current vs. Source-Drain Voltage 10 1.5 tr 6 4 2 1 0 0.01 0.1 1 10 0 Drain Current : ID [A] www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 4/6 1 2 3 Total Gate Charge : Qg [nC] 4 5 2010.09 - Rev.A MP6K31 Data Sheet Typical Capacitance vs. Drain-Source Voltage 1000 Maximum Safe Operating Area Ta=25℃ f=1MHz VGS=0V Operation in this area is limited by RDS(on) ( VGS = 10V ) PW = 100μs Drain Current : ID [ A ] Capacitance : C [pF] 10 100 Ciss Coss 10 Crss PW = 1ms 1 PW = 10ms DC Operation 0.1 1 0.01 0.01 0.1 1 10 Ta=25℃ Single Pulse (1Unit) Mounted on a ceramic board. （30mm x 30mm x 0.8mm) 0.1 1 10 100 Drain-Source Voltage : VDS [ V ] Drain-Source Voltage : VDS [V] Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal R Resistance : r（t） Ta=25℃ Single Pulse 1 Mounted on a ceramic board. （30mm × 30mm × 0.8mm) Rth(ch-a)=89.3℃/W (1Unit) Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.1 0.01 0.001 0.0001 0.01 1 100 Pulse width ： Pw （ s ） www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 5/6 2010.09 - Rev.A MP6K31 Data Sheet Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching time measurement circuit 90% td(off) tr tf toff Fig.1-2 Switching waveforms VG VGS ID VDS Qg RL IG(Const.) VGS D.U.T. Qgs Qgd VDD Charge Fig.2-1 Gate charge measurement circuit www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. Fig.2-2 Gate Charge Waveform 6/6 2010.09 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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