Preliminary Data Sheet μPD5904T7K CMOS Integrated Circuits High Power SP4T Switch R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 DESCRIPTION The μPD5904T7K is a CMOS MMIC SP4T (Single Pole Four Throw) switch for GSM and UMTS/LTE main Antenna switching and other High Power RF switching applications up to +35 dBm. This device can operate frequency from 0.05 to 6.0 GHz, having low insertion loss and high isolation. This device is housed in a 12-pin plastic QFN (Quad Flat Non-Leaded) (T7K) package. FEATURES • Low control voltage • Low insertion loss • • • • : Vcont = 1.3 V MIN.,VDD = 2.3 V MIN. : Lins = 0.4 dB TYP. @ f = 1 GHz : Lins = 0.5 dB TYP. @ f = 2 GHz High isolation : ISL = 35 dB TYP. @ f = 1 GHz : ISL = 30 dB TYP. @ f = 2 GHz High Handling power : Pin (0.1dB) = +38 dBm TYP. @f = 0.9/2 GHz High-density surface mounting : 12-pin plastic QFN (T7K) package (2.0 × 2.0 × 0.6 mm) No DC blocking capacitors required. APPLICATIONS • GSM and UMTS/LTE main Antenna switching • Diversity Antenna switching • Antenna tuning Application ORDERING INFORMATION Part Number μPD5904T7K-E2 Order Number μPD5904T7K-E2-A Package 12-pin plastic QFN (T7K) (Pb-Free) Marking 5904 Supplying Form • Embossed tape 8 mm wide • Pin 10, 11 and 12 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: μPD5904T7K-A CAUTION Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this device. This device must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions must be employed at all times. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 Page 1 of 14 μPD5904T7K PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM 3 5 4 10 10 9 RF4 1 RF1 9 9 8 RF3 2 RF2 8 8 7 GND 3 GND 7 4 6 5 Vcont2 2 11 (Bottom View) GND 12 RFC 10 5904 1 11 Vcont1 12 (Top View) GND (Top View) VDD <R> 11 12 1 2 13 3 7 6 6 5 4 Pin No. 1 Pin Name RF4 2 3 4 5 6 7 8 9 10 11 12 13 RF3 GND VDD Vcont1 Vcont2 GND RF2 RF1 GND RFC GND GND BLOCK DIAGRAM RF1 RF2 RF3 RF4 RFC VDD Vcont1 Vcont2 SW TRUTH TABLE Vcont1 High High Low Low Vcont2 High Low High Low RFC−RF1 ON OFF OFF OFF RFC−RF2 OFF ON OFF OFF RFC−RF3 OFF OFF ON OFF RFC−RF4 OFF OFF OFF ON ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Supply Voltage Control Voltage Input Power Operating Ambient Temperature Storage Temperature Symbol VDD Vcont Pin TA Tstg Ratings 3.6 3.6 +38 −40 to +85 −55 to +125 Unit V V dBm °C °C RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter Operating Frequency Supply Voltage Control Voltage (High) Control Voltage (Low) Note: Symbol f VDD Vcont (H) Note Vcont (L) MIN. 0.05 2.3 1.3 0 TYP. − − − − MAX. 6.0 3.3 VDD 0.4 Unit GHz V V V Vcont ≤ VDD R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 Page 2 of 14 μPD5904T7K ELECTRICAL CHARACTERISTICS (TA = +25°C, VDD = 2.5 V, Vcont (H) = 1.8 V, Vcont (L) = 0 V, ZO = 50 Ω, unless otherwise specified) Parameter Insertion Loss Isolation Return Loss (RFC) Return Loss (RF1,2,3,4) 0.1 dB Loss Compression Input Power Symbol Lins1 Lins2 Lins3 Lins4 Lins5 Lins6 ISL1 ISL2 ISL3 ISL4 ISL5 ISL6 RL(C)1 RL(C)2 RL(RF)1 RL(RF)2 Pin (0.1 dB)1 Path RFC − RF1, 2, 3, 4 RFC − RF1, 2, 3, 4 RFC − RF1, 2, 3, 4 RFC − RF1, 2, 3, 4 Pin (0.1 dB)2 Test Conditions f = 0.05 to 0.5 GHz f = 0.5 to 1.0 GHz f = 1.0 to 2.0 GHz f = 2.0 to 2.7 GHz f = 2.7 to 3.8 GHz MIN. − − − − − TYP. 0.35 0.40 0.50 0.55 0.60 MAX. 0.50 0.55 0.65 0.75 0.80 Unit dB dB dB dB dB f = 3.8 to 6.0 GHz f = 0.05 to 0.5 GHz f = 0.5 to 1.0 GHz f = 1.0 to 2.0 GHz f = 2.0 to 2.7 GHz f = 2.7 to 3.8 GHz − 30 25 20 15 15 0.75 40 35 30 25 25 0.95 − − − − − dB dB dB dB dB dB f = 3.8 to 6.0 GHz f = 0.05 to 3.8 GHz f = 3.8 to 6.0 GHz f = 0.05 to 3.8 GHz 10 15 10 15 20 25 17 25 − − − − dB dB dB dB f = 3.8 to 6.0 GHz f = 0.9 GHz 10 +36.0 17 − − dB dBm − dBm +38.0 Note f = 2.0 GHz +36.0 +38.0 Note Harmonics 2nd Order Inter Modulation Distortion 3rd Order Inter Modulation Distortion 2f0 (L) 3f0 (L) 2f0 (H) 3f0 (H) IMD2(L) IMD2(H) IMD3(L) IMD3(H) RFC − RF1, 2, 3, 4 f = 0.9 GHz, Pin = +35 dBm CW RFC − RF1, 2, 3, 4 f = 2.0 GHz, Pin = +33 dBm CW RFC − RF1, 2, 3, 4 RFC − RF1, 2, 3, 4 TBR(L) RFC − RF1, 2, 3, 4 Triple Beat Ratio TBR(H) Input 2nd order Intercept Point Note: IIP2(Cel) IIP2(PCS) RFC − RF1, 2, 3, 4 75 80 − dBc 70 75 75 85 − − dBc 70 80 − f = 835 MHz, Pin = +20 dBm f = 45 MHz, Pin = –15 dBm − −98 −93 f = 1 950 MHz, Pin = +20 dBm f = 190MHz, Pin = –15 dBm − −105 −100 f = 835 MHz, Pin = +20 dBm f = 790 MHz, Pin = –15 dBm − −110 −105 f = 1 950 MHz, Pin = +20 dBm f = 1 760 MHz, Pin = –15 dBm − −110 −105 f = 836±0.5 MHz, Pin = +21.5 dBm f = 881.5 MHz, Pin = –30 dBm 75 80 − 75 80 − 105 110 − 105 110 − f = 1 880.5±0.5 MHz, Pin = +21.5 dBm f = 1 960 MHz, Pin = –30 dBm f = 836.6 MHz, Pin = +24 dBm f = 1718 MHz, Pin = –20 dBm f = 1 885 MHz, Pin = +24 dBm f = 3 850 MHz, Pin = –20 dBm dBc dBc dBc dBm Absolute Maximum Ratings R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 Page 3 of 14 μPD5904T7K ELECTRICAL CHARACTERISTICS (TA = +25°C, VDD = 2.5 V, Vcont (H) = 1.8 V, Vcont (L) = 0 V, ZO = 50 Ω, unless otherwise specified) Parameter Symbol Switch Control Speed tsw Supply Current IDD Test Conditions MIN. TYP. MAX. − 1.5 3 − 130 250 Icont1(H) − Vcont1: High No RF − − 1 Icont1(L) − Vcont1: Low No RF − − 1 Icont2(H) − Vcont2: High No RF − − 1 Icont2(L) − Vcont2: Low No RF − − 1 Control Current 1 Control Current 2 R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 Path RFC − 50% CTL to 90/10% RF1, 2, 3, 4 − No RF Unit μs μA Page 4 of 14 μPD5904T7K <R> EVALUATION CIRCUIT RFC GND GND 12 11 10 RF4 RF1 1 9 RF3 RF2 13 GND 2 8 3 7 GND GND 4 VDD 1 000 pF 5 Vcont1 1 000 pF 6 Vcont2 1 000 pF The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. APPLICATION INFORMATION Switch LESD • LESD provides a means to increase the ESD protection on a specific RF port, typically the port attached to the antenna. R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 Page 5 of 14 μPD5904T7K TYPICAL CHARACTERISTICS (TA = +25°C, VDD = 2.5 V, Vcont (H) = 1.8 V, Vcont (L) = 0 V, ZO = 50 Ω, unless otherwise specified) RFC-RF1/RF2/RF3/RF4 INSERTION LOSS vs. FREQUENCY RFC-RF2/RF3/RF4 (RFC-RF1 ON) ISOLATION vs. FREQUENCY 0 −0.2 −5 −0.4 −10 −0.6 −15 Isolation ISL (dB) Insertion Loss Lins (dB) 0.0 −0.8 −1.0 −1.2 −1.4 −25 RFC-RF2 −30 RFC-RF4 −40 −1.8 −45 1.0 2.0 3.0 4.0 5.0 −50 0.0 6.0 3.0 4.0 5.0 6.0 RFC RETURN LOSS vs. FREQUENCY RF1/RF2/RF3/RF4 RETURN LOSS vs. FREQUENCY 0 −5 −10 −10 RFC-RF4 ON RFC-RF1 ON RFC-RF3 ON RFC-RF2 ON Return Loss RL (dB) −25 2.0 Frequency f (GHz) −5 −20 1.0 Frequency f (GHz) 0 −15 RFC-RF3 −35 −1.6 −2.0 0.0 Return Loss RL (dB) −20 −30 −35 −15 −20 −25 −30 −35 −40 −40 −45 −45 −50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Frequency f (GHz) RFC-RF4 ON RFC-RF1 ON RFC-RF3 ON RFC-RF2 ON −50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Frequency f (GHz) Remark The graphs indicate nominal characteristics. R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 Page 6 of 14 μPD5904T7K RFC-RF1/RF2/RF3/RF4 INSERTION LOSS vs. SUPPLY VOLTAGE RFC-RF1/RF2/RF3/RF4 ISOLATION vs. SUPPLY VOLTAGE 0.0 0 −10 1.0 GHz 2.0 GHz −0.3 −0.4 −0.5 −0.6 2.7 GHz 3.8 GHz −0.7 −1.0 2 3.8 GHz −20 −30 2.0 GHz −40 −50 0.5 GHz 6.0 GHz 2.2 2.4 2.4 2.4 3 3.2 3.4 −60 2 3.6 2.2 2.4 2.4 2.4 3 3.2 3.4 3.6 Supply Voltage VDD (V) Supply Voltage VDD (V) RFC-RF1/RF2/RF3/RF4 RETURN LOSS vs. SUPPLY VOLTAGE RF1/RF2/RF3/RF4-RFC RETURN LOSS vs. SUPPLY VOLTAGE 0 0 −5 −5 −10 −10 −15 −20 3.8 GHz f = 0.5 GHz −25 6.0 GHz −30 −35 −40 1.0 GHz 2.0 GHz −50 2 2.2 2.4 2.4 2.4 3 3.2 3.4 −15 −20 f = 0.5 GHz 6.0 GHz 3.8 GHz −25 −30 −35 −40 2.7 GHz −45 1.0 GHz 2.0 GHz 2.7 GHz −45 −50 2 3.6 2.2 2.4 2.4 2.4 3 3.2 3.4 3.6 Supply Voltage VDD (V) Supply Voltage VDD (V) RFC-RF1/RF2/RF3/RF4 INSERTION LOSS vs. INPUT POWER f = 0.9 GHz RFC-RF1/RF2/RF3/RF4 INSERTION LOSS vs. INPUT POWER f = 2 GHz 0.1 0.1 −0.3 VDD = 3.3 V VDD = 2.5 V Insertion Loss Lins (dB) −0.1 Insertion Loss Lins (dB) 2.7 GHz f = 6.0 GHz 1.0 GHz −0.8 −0.9 Return Loss RL (dB) Isolation ISL (dB) −0.2 f = 0.5 GHz Return Loss RL (dB) Insertion Loss Lins (dB) −0.1 −0.5 VDD = 2.3 V −0.7 −0.9 −1.1 −1.3 −1.5 20 −0.1 VDD = 3.3 V −0.3 VDD = 2.5 V −0.5 VDD = 2.3 V −0.7 −0.9 −1.1 −1.3 25 30 35 40 Input Power Pin (dB) −1.5 20 25 30 35 40 Input Power Pin (dB) Remark The graphs indicate nominal characteristics. R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 Page 7 of 14 μPD5904T7K RFC-RF1/RF2/RF3/RF4 3rd HARMONICS 3fo vs. INPUT POWER f = 0.9 GHz −60 −60 −70 −70 3rd Harmonics 3fo (dBc) 2nd Harmonics 2fo (dBc) RFC-RF1/RF2/RF3/RF4 2nd HARMONICS vs. INPUT POWER f = 0.9 GHz −80 −90 −100 −110 −120 25 30 35 −80 −90 −100 −110 −120 25 40 30 Input Power Pin (dBm) −60 −70 −70 3rd Harmonics 3fo (dBc) 2nd Harmonics 2fo (dBc) RFC-RF1/RF2/RF3/RF4 3rd HARMONICS 3fo vs. INPUT POWER f = 2 GHz −60 −80 −90 −100 −110 30 40 Input Power Pin (dBm) RFC-RF1/RF2/RF3/RF4 2nd HARMONICS vs. INPUT POWER f = 2 GHz −120 25 35 35 −80 −90 −100 −110 −120 25 40 30 35 40 Input Power Pin (dBm) Input Power Pin (dBm) RFC-RF1/RF2/RF3/RF4 INSERTION LOSS vs. OPERATING AMBIENT TEMPERATURE f = 0.5 GHz RFC-RF1/RF2/RF3/RF4 INSERTION LOSS vs. OPERATING AMBIENT TEMPERATURE f = 1 GHz 0.0 0.0 −0.1 −0.2 Insertion Loss Lins (dB) Insertion Loss Lins (dB) −0.1 VDD = 3.3 V −0.3 −0.4 −0.5 VDD = 2.3 V VDD = 2.5 V −0.6 −0.7 −0.3 −0.4 −0.5 −0.8 −0.9 −20 0 20 40 60 80 100 Operating Ambient Temperature TA (°C) VDD = 2.5 V −0.7 −0.9 −40 VDD = 2.3 V −0.6 −0.8 −1.0 −60 VDD = 3.3 V −0.2 −1.0 −60 −40 −20 0 20 40 60 80 100 Operating Ambient Temperature TA (°C) Remark The graphs indicate nominal characteristics. R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 Page 8 of 14 μPD5904T7K RFC-RF1/RF2/RF3/RF4 INSERTION LOSS vs. OPERATING AMBIENT TEMPERATURE f = 2.7 GHz 0.0 0.0 −0.1 −0.1 −0.2 2.5 V 3.3 V −0.3 Insertion Loss Lins (dB) Insertion Loss Lins (dB) RFC-RF1/RF2/RF3/RF4 INSERTION LOSS vs. OPERATING AMBIENT TEMPERATURE f = 2 GHz −0.4 −0.5 VDD = 2.3 V −0.6 −0.7 −0.8 −0.9 −1.0 −60 −0.2 −0.4 −0.5 −0.6 −0.8 −0.9 −40 −20 0 20 40 60 −1.0 −60 80 100 0.0 0.0 −0.1 −0.3 3.3 V −0.4 −0.5 −0.6 2.5 V VDD = 2.3 V −0.7 −0.8 −0.9 −40 −20 0 20 40 60 3.3 V −0.7 −20 −20 0 20 40 60 80 100 −30 −35 2.5 V 3.3 V −40 −45 VDD = 2.3 V −50 2.5 V 0 Isolation ISL (dB) −25 −40 −40 RFC-RF1/RF2/RF3/RF4 ISOLATION vs. OPERATING AMBIENT TEMPERATURE f = 1 GHz −25 VDD = 2.3 V VDD = 2.3 V Operating Ambient Temperature TA (°C) −20 3.3 V 2.5 V −0.8 −20 −45 80 100 −0.6 −15 −40 60 −0.5 −15 −35 40 −0.4 −1.0 −60 80 100 −30 20 −0.3 −0.9 RFC-RF1/RF2/RF3/RF4 ISOLATION vs. OPERATING AMBIENT TEMPERATURE f = 0.5 Hz Isolation ISL (dB) 0 −0.2 Operating Ambient Temperature TA (°C) −55 −60 −20 RFC-RF1 INSERTION LOSS vs. OPERATING AMBIENT TEMPERATURE f = 6 GHz −0.1 −0.2 −40 Operating Ambient Temperature TA (°C) Insertion Loss Lins (dB) Insertion Loss Lins (dB) RFC-RF1/RF2/RF3/RF4 INSERTION LOSS vs. OPERATING AMBIENT TEMPERATURE f = 3.8 GHz −50 2.5 V VDD = 2.3 V −0.7 Operating Ambient Temperature TA (°C) −1.0 −60 3.3 V −0.3 20 40 60 80 100 Operating Ambient Temperature TA (°C) −55 −60 −40 −20 0 20 40 60 80 100 Operating Ambient Temperature TA (°C) Remark The graphs indicate nominal characteristics. R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 Page 9 of 14 μPD5904T7K RFC-RF1/RF2/RF3/RF4 ISOLATION vs. OPERATING AMBIENT TEMPERATURE f = 2.7 GHz −15 −15 −20 −20 −25 2.5 V Isolation ISL (dB) Isolation ISL (dB) RFC-RF1/RF2/RF3/RF4 ISOLATION vs. OPERATING AMBIENT TEMPERATURE f = 2 GHz 3.3 V −30 −35 VDD = 2.3 V −40 −45 −30 −35 −40 −20 0 20 40 60 −45 −55 −60 80 100 RFC-RF1/RF2/RF3/RF4 ISOLATION vs. OPERATING AMBIENT TEMPERATURE f = 3.8 GHz 0 20 40 60 80 100 RFC-RF1/RF2/RF3/RF4 ISOLATION vs. OPERATING AMBIENT TEMPERATURE f = 6 GHz 2.5 V −20 3.3 V −25 −25 −30 Isolation ISL (dB) Isolation ISL (dB) −20 −15 −20 VDD = 2.3 V −35 −40 −45 −50 2.5 V VDD = 2.3 V 3.3 V −30 −35 −40 −45 −50 −40 −20 0 20 40 60 −55 −60 80 100 RFC RETURN LOSS vs. OPERATING AMBIENT TEMPERATURE f = 3.8 GHz −5 −5 −10 −10 2.3 V 2.5 V −25 −30 VDD = 3.3 V −35 Return Loss RL (dB) 0 −20 −20 0 20 40 60 80 100 RFC RETURN LOSS vs. OPERATING AMBIENT TEMPERATURE f = 6.0 GHz 0 −15 −40 Operating Ambient Temperature TA (°C) Operating Ambient Temperature TA (°C) Return Loss RL (dB) −40 Operating Ambient Temperature TA (°C) −15 −40 −60 VDD = 2.3 V −40 Operating Ambient Temperature TA (°C) −55 −60 3.3 V 2.5 V −50 −50 −55 −60 −25 3.3 V 2.5 V −15 −20 VDD = 2.3 V −25 −30 −35 −40 −20 0 20 40 60 80 100 Operating Ambient Temperature TA (°C) −40 −60 −40 −20 0 20 40 60 80 100 Operating Ambient Temperature TA (°C) Remark The graphs indicate nominal characteristics. R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 Page 10 of 14 μPD5904T7K RRF1/RF2/RF3/RF4 RETURN LOSS vs. OPERATING AMBIENT TEMPERATURE f = 6 GHz 0 0 −5 −5 −10 −10 Return Loss RL (dB) Return Loss RL (dB) RF 1/RF2/RF3/RF4 RETURN LOSS vs. OPERATING AMBIENT TEMPERATURE f = 3.8 GHz −15 2.5 V − 20 3.3 V −25 −30 VDD = 2.3 V −35 −40 −60 −40 −20 0 20 40 60 80 100 Operating Ambient Temperature TA (°C) 3.3 V −15 − 20 −25 2.5 V VDD = 2.3 V −30 −35 −40 −60 −40 −20 0 20 40 60 80 100 Operating Ambient Temperature TA (°C) Remark The graphs indicate nominal characteristics. R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 Page 11 of 14 μPD5904T7K MOUNTING PAD LAYOUT DIMENSIONS 12-PIN PLASTIC QFN (T7K) (UNIT: mm) MOUNTING PAD 1.15 1.15 0.8 0.8 0.5 0.5 0.8 12−0.15 1.15 1.2 0.8 0.5 1.2 0.5 1.15 C0.2 SOLDER MASK 1.125 1.125 0.825 0.825 0.5 0.5 1.125 0.825 0.825 1.125 12−0.15 0.97 0.5 0.97 0.5 C0.2 Solder thickness : 0.1 mm Remark The mounting pad layout in this document is for reference only. When designing PCB, please consider workability of mounting, solder joint reliability, prevention of solder bridge and so on, in order to optimize the design. R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 Page 12 of 14 μPD5904T7K PACKAGE DIMENSIONS 12-PIN PLASTIC QFN (T7K) (UNIT: mm) (Top View) (Bottom View) (Side View) 2±0.1 1.2±0.1 0.57+0.03 –0.05 0.2±0.075 1.2±0.1 2±0.1 0.5±0.1 (0 .3 2) (C0.2) A A 0.08 MIN. 0.2+0.07 –0.05 Remark A > 0 ( ): Reference value R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 Page 13 of 14 μPD5904T7K RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Partial Heating Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2% (Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below Condition Symbol IR260 HS350 CAUTION Do not use different soldering methods together (except for partial heating). R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 Page 14 of 14 μPD5904T7K Data Sheet Revision History Rev. Date Description Summary Page 1.00 Jul 24, 2012 – First edition issued 2.00 Dec 11, 2012 p.2 GND is added as Pin No.13 in PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM. p.5 GND is added in EVALUATION CIRCUIT. All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. 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