μPC3239TB

BIPOLAR ANALOG INTEGRATED CIRCUIT
μPC3239TB
DESCRIPTION
ED
3.3 V, SILICON MMIC MEDIUM
OUTPUT POWER AMPLIFIER
The μPC3239TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB.
This device exhibits low noise figure and high power gain characteristics.
This IC is manufactured using our UHS0 (Ultra High Speed Process) bipolar process.
IN
U
FEATURES
• Low current
: ICC = 29.0 mA TYP.
• Medium output power
: PO (sat) = +12.5 dBm TYP. @ f = 1.0 GHz
: PO (sat) = +10 dBm TYP. @ f = 2.2 GHz
• High linearity
: PO (1dB) = +10 dBm TYP. @ f = 1.0 GHz
: PO (1dB) = +8 dBm TYP. @ f = 2.2 GHz
• Power gain
: GP = 25 dB TYP. @ f = 1.0 GHz
: GP = 25.5 dB TYP. @ f = 2.2 GHz
: ΔGP = 1.0 dB TYP. @ f = 1.0 to 2.2 GHz
NT
• Gain flatness
• Noise Figure
: NF = 4.0 dB TYP. @ f = 1.0 GHz
: NF = 4.3 dB TYP. @ f = 2.2 GHz
• Supply voltage
: VCC = 3.0 to 3.6 V
: input/output 50 Ω
• Port impedance
APPLICATIONS
SC
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• IF amplifiers in DBS LNB, other L-band amplifiers, etc.
ORDERING INFORMATION
Part Number
μPC3239TB-E3
Order Number
Package
μPC3239TB-E3-A 6-pin super minimold
(Pb-Free)
Remark
Marking
C3V
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
To order evaluation samples, please contact your nearby sales office
DI
Part number for sample order: μPC3239TB-A
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10736EJ01V0DS (1st edition)
Date Published October 2008 NS
2008
μPC3239TB
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
2
1
(Bottom View)
4 3
4 4
5 2
5 5
6 1
Pin No.
Pin Name
1
INPUT
2
GND
3
GND
4
OUTPUT
5
GND
6
VCC
3
ED
3
(Top View)
C3V
(Top View)
2
6 6
1
μPC2762TB
VCC
ICC
GP
NF
PO (1 dB)
PO (sat)
(V)
(mA)
(dB)
(dB)
(dBm)
(dBm)
3.0
26.5
13.0 (0.9 GHz)
6.5 (0.9 GHz)
μPC2763TB
27.0
μPC2771TB
36.0
μPC8181TB
23.0
μPC8182TB
μPC3239TB
3.3
29.0
6-pin
super
7.0 (1.9 GHz)
＋7.0 (1.9 GHz)
＋8.5 (1.9 GHz)
20.0 (0.9 GHz)
5.5 (0.9 GHz)
＋9.5 (0.9 GHz)
＋11.0 (0.9 GHz)
21.0 (1.9 GHz)
5.5 (1.9 GHz)
＋6.5 (1.9 GHz)
＋8.0 (1.9 GHz)
21.0 (0.9 GHz)
6.0 (0.9 GHz)
＋11.5 (0.9 GHz)
＋12.5 (0.9 GHz)
21.0 (1.5 GHz)
6.0 (1.5 GHz)
＋9.5 (1.5 GHz)
＋11.0 (1.5 GHz)
19.0 (0.9 GHz)
4.5 (0.9 GHz)
＋8.0 (0.9 GHz)
＋9.5 (0.9 GHz)
21.0 (1.9 GHz)
4.5 (1.9 GHz)
＋7.0 (1.9 GHz)
＋9.0 (1.9 GHz)
22.0 (2.4 GHz)
4.5 (2.4 GHz)
＋7.0 (2.4 GHz)
＋9.0 (2.4 GHz)
21.5 (0.9 GHz)
4.5 (0.9 GHz)
＋9.5 (0.9 GHz)
＋11.0 (0.9 GHz)
20.5 (1.9 GHz)
4.5 (1.9 GHz)
＋9.0 (1.9 GHz)
＋10.5 (1.9 GHz)
20.5 (2.4 GHz)
5.0 (2.4 GHz)
＋8.0 (2.4 GHz)
＋10.0 (2.4 GHz)
25 (1.0 GHz)
4.0 (1.0 GHz)
＋10 (1.0 GHz)
＋12.5 (1.0 GHz)
25.5 (2.2 GHz)
4.3 (2.2 GHz)
＋8 (2.2 GHz)
＋10 (2.2 GHz)
DI
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
2
Data Sheet PU10736EJ01V0DS
Package
＋9.0 (0.9 GHz)
15.5 (1.9 GHz)
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30.0
＋8.0 (0.9 GHz)
NT
Part No.
IN
U
PRODUCT LINE-UP OF 3 V or 3.3 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
(TA = +25°C, VCC = Vout = 3.0 V or 3.3 V, ZS = ZL = 50 Ω)
Marking
C1Z
minimold
C2A
C2H
C3E
C3F
C3V
μPC3239TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
VCC
TA = +25°C, pin 4 and 6
4.0
V
Total Circuit Current
ICC
TA = +25°C, pin 4 and 6
55
mA
Power Dissipation
PD
TA = +85°C
270
mW
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
Input Power
Pin
+10
dBm
ED
Note
TA = +25°C
RECOMMENDED OPERATING RANGE
Parameter
Supply Voltage
Symbol
VCC
IN
U
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB
Conditions
The same voltage should be applied
MIN.
TYP.
MAX.
Unit
3.0
3.3
3.6
V
−40
+25
+85
°C
to pin 4 and 6.
TA
DI
SC
O
NT
Operating Ambient Temperature
Data Sheet PU10736EJ01V0DS
3
μPC3239TB
ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 3.3 V, ZS = ZL = 50 Ω, unless otherwise
specified)
Symbol
Test Conditions
Circuit Current
ICC
No input signal
Power Gain 1
GP1
f = 0.25 GHz, Pin = −30 dBm
Power Gain 2
GP2
f = 1.0 GHz, Pin = −30 dBm
Power Gain 3
GP3
f = 1.8 GHz, Pin = −30 dBm
Power Gain 4
GP4
f = 2.2 GHz, Pin = −30 dBm
Saturated Output Power 1
PO (sat) 1
f = 1.0 GHz, Pin = −5 dBm
Saturated Output Power 2
PO (sat) 2
f = 2.2 GHz, Pin = −10 dBm
Gain 1 dB Compression Output Power 1
PO (1 dB) 1
f = 1.0 GHz
Gain 1 dB Compression Output Power 2
PO (1 dB) 2
Noise Figure 1
MIN.
TYP.
MAX.
Unit
23
29.0
36.5
mA
21.5
24.5
27.5
dB
ED
Parameter
25
28
22.5
25.5
28.5
22.5
25.5
28.5
+10
+12.5
−
+7
+10
−
+7.5
+10
−
f = 2.2 GHz
+5
+8
−
NF1
f = 1.0 GHz
−
4.0
4.8
Noise Figure 2
NF2
f = 2.2 GHz
−
4.3
5.1
Isolation 1
ISL1
f = 1.0 GHz, Pin = −30 dBm
28
35
−
Isolation 2
ISL2
f = 2.2 GHz, Pin = −30 dBm
28
35
−
Input Return Loss 1
RLin1
f = 1.0 GHz, Pin = −30 dBm
10
25
−
Input Return Loss 2
RLin2
f = 2.2 GHz, Pin = −30 dBm
10
15
−
Output Return Loss 2
NT
Output Return Loss 1
IN
U
22
RLout1
f = 1.0 GHz, Pin = −30 dBm
15
25
−
RLout2
f = 2.2 GHz, Pin = −30 dBm
15
25
−
dBm
dBm
dB
dB
dB
dB
STANDARD CHARACTERISTICS FOR REFERENCE
(TA = +25°C, VCC = Vout = 3.3 V, ZS = ZL = 50 Ω, unless otherwise specified)
Symbol
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Parameter
Test Conditions
Reference Value
Unit
dB
Power Gain 5
GP5
f = 2.6 GHz, Pin = −30 dBm
24.5
Power Gain 6
GP6
f = 3.0 GHz, Pin = −30 dBm
22.5
Gain Flatness
ΔGP
f = 1.0 to 2.2 GHz, Pin = −30 dBm
1.0
dB
K factor 1
K1
f = 1.0 GHz, Pin = −30 dBm
1.6
−
K factor 2
K2
f = 2.2 GHz, Pin = −30 dBm
1.5
−
dBm
Output 3rd Order Intercept Point 1
OIP31
f1 = 1 000 MHz, f2 = 1 001 MHz
21
Output 3rd Order Intercept Point 2
OIP32
f1 = 2 200 MHz, f2 = 2 201 MHz
15.5
f1 = 1 000 MHz, f2 = 1 001 MHz,
37
dBc
57
dBc
2nd Order Intermodulation Distortion
IM2
DI
Pout = −5 dBm/tone
2nd Harmonic
4
2f0
f0 = 1.0 GHz, Pout = −15 dBm
Data Sheet PU10736EJ01V0DS
μPC3239TB
TEST CIRCUIT
C4
1 000 pF
VCC
ED
Microstrip Line
C3
1 000 pF
C1
100 pF
IN
C5
1 000 pF
L1
100 nH
6
1
OUT
4
IN
U
C2
100 pF
2, 3, 5
Microstrip Line
GND
ZS = ZL = 50 Ω
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
COMPONENTS OF TEST CIRCUIT FOR MEASURING
ELECTRICAL CHARACTERISTICS
L1
Value
NT
Type
Note
Chip Inductor
100 nH
C1, C2
Chip Capacitor
100 pF
C3, C5
Chip Capacitor
1 000 pF
Feed-through Capacitor
1 000 pF
C4
Note There is a case to show a dimple wave of characteristic by a chip inductor L1 part in the high frequency area.
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In that case, please reduce a value of L1.
INDUCTOR FOR THE OUTPUT PIN
The internal output transistor of this IC, to output medium power. To supply current for output transistor, connect an
inductor between the VCC pin (pin 6) and output pin (pin 4). Select inductance, as the value listed above.
The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum
voltage drop to output enable high level. In terms of AC, the inductor makes output-port impedance higher to get
enough gain. In this case, large inductance and Q is suitable (Refer to the following page).
CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS
Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for
DI
the input and output pins.
The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias
can be supplied against VCC fluctuation.
The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial
impedance. Their capacitances are therefore selected as lower impedance against a 50 Ω load. The capacitors thus
perform as high pass filters, suppressing low frequencies to DC.
To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under 10
MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are
determined by equation, C = 1/(2 πRfc).
Data Sheet PU10736EJ01V0DS
5
μPC3239TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
φ 0.6
2
3V
4
C
1
L1
C1
→
6
5
IN
U
C3
C2
1.0
3
Top View
ED
0.3
Mounting direction
C5
NT
C4
C4: Feed-through Capacitor
Notes
COMPONENT LIST
1. 30 × 30 × 0.4 mm double sided 35 μ m copper clad polyimide
Size
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Value
L1
100 nH
1005
C1, C2
100 pF
1608
C3, C5
1 000 pF
1005
C4
1 000 pF
Feed-through Capacitor
board.
2. Back side: GND pattern
3. Au plated on pattern
4.
: Through holes
DI
6
(Unit: mm)
Data Sheet PU10736EJ01V0DS
μPC3239TB
TYPICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 3.3 V, ZS = ZL = 50 Ω, unless otherwise specified)
CURCUIT CURRENT vs.
OPERATING AMBIENT TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
40
No Input Signal
38
Circuit Current ICC (mA)
30
25
TA = +85°C
20
15
10
+25°C
5
1
2
3
4
5
Supply Voltage VCC (V)
Pin = –30 dBm
24
0
20
40
60
80
100
25
24
3.3 V
3.0 V
Pin = –30 dBm
VCC = 3.6 V
–10
–15
NT
Power Gain GP (dB)
26
20
–60 –40 –20
Input Return Loss RLin (dB)
VCC = 3.6 V
22
21
20
–20
3.0 V
–25
3.3 V
–30
–35
–40
–45
SC
O
19
0.5
1.0
1.5
2.0
2.5
3.0
3.5
–50
0
4.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Frequency f (GHz)
Frequency f (GHz)
ISOLATION vs. FREQUENCY
OUTPUT RETURN LOSS vs. FREQUENCY
0
–15
–20
–25
DI
VCC = 3.0 V, 3.3 V, 3.6 V
–30
–35
–40
–45
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
Output Return Loss RLout (dB)
Pin = –30 dBm
–10
Isolation ISL (dB)
28
–5
26
–50
0
30
0
27
–5
32
INPUT RETURN LOSS vs. FREQUENCY
POWER GAIN vs. FREQUENCY
18
0
34
Operating Ambient Temperature TA (°C)
28
23
VCC = +3.3 V
22
–40°C
0
0
36
No Input Signal
IN
U
Circuit Current ICC (mA)
35
ED
40
–5
Pin = –30 dBm
–10
–15
VCC = 3.0 V
–20
–25
–30
–35
3.3 V
–40
3.6 V
–45
–50
0
Frequency f (GHz)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10736EJ01V0DS
7
μPC3239TB
POWER GAIN vs. FREQUENCY
INPUT RETURN LOSS vs. FREQUENCY
0
Pin = –30 dBm
Input Return Loss RLin (dB)
Power Gain GP (dB)
VCC = 3.3 V
TA = –40°C
26
24
+85°C
Pin = –30 dBm
–5
+25°C
22
20
VCC = 3.3 V
–10
–15
TA = +85°C
–20
ED
28
–25
–30
–35
–40
+25°C
–45
18
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2.0
2.5
3.0
3.5
4.0
0
Output Return Loss RLout (dB)
VCC = 3.3 V
–10
–15
–20
–25
–35
–45
–50
0
0.5
1.0
1.5
2.0
Pin = –30 dBm
VCC = 3.3 V
–5
–10
–15
TA = –40°C
–20
–25
NT
TA = –40°C, +25°C, +85°C
–30
–40
2.5
3.0
3.5
–30
–35
SC
O
OUTPUT POWER vs. INPUT POWER
3.3 V
5
3.0 V
0
DI
–5
–10
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Frequency f (GHz)
20
15
Output Power Pout (dBm)
10
0.5
OUTPUT POWER vs. INPUT POWER
20
VCC = 3.6 V
+85°C
–45
–50
0
4.0
+25°C
–40
Frequency f (GHz)
Output Power Pout (dBm)
1.5
OUTPUT RETURN LOSS vs. FREQUENCY
Pin = –30 dBm
–5
VCC = 3.6 V
10
5
3.3 V
3.0 V
0
–5
–10
f = 1.0 GHz
–15
–45 –40 –35 –30 –25 –20 –15 –10 –5
0
f = 2.2 GHz
–15
–45 –40 –35 –30 –25 –20 –15 –10 –5
0
Input Power Pin (dBm)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
8
1.0
IN
U
ISOLATION vs. FREQUENCY
0
15
0.5
Frequency f (GHz)
Frequency f (GHz)
Isolation ISL (dB)
–40°C
–50
0
Data Sheet PU10736EJ01V0DS
μPC3239TB
OUTPUT POWER vs. INPUT POWER
20
20
15
15
TA = +25°C, +85°C
5
0
–40°C
–5
–10
–15
–45 –40 –35 –30 –25 –20 –15 –10 –5
5
+25°C +85°C
0
–5
f = 2.2 GHz
–15
–45 –40 –35 –30 –25 –20 –15 –10 –5
0
0
Input Power Pin (dBm)
IN
U
Input Power Pin (dBm)
NOISE FIGURE vs. FREQUENCY
NOISE FIGURE vs. FREQUENCY
5.5
5.5
5.0
Noise Figure NF (dB)
5.0
VCC = 3.0 V, 3.3 V, 3.6 V
4.5
4.0
3.5
TA = +85°C
4.5
4.0
NT
Noise Figure NF (dB)
10
–10
f = 1.0 GHz
+25°C
3.5
–40°C
3.0
3.0
2.5
0
TA = –40°C
ED
10
Output Power Pout (dBm)
Output Power Pout (dBm)
OUTPUT POWER vs. INPUT POWER
0.5
1.0
1.5
2.0
2.5
3.0
3.5
2.5
0
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O
Frequency f (GHz)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Frequency f (GHz)
DI
Remark The graphs indicate nominal characteristics.
Data Sheet PU10736EJ01V0DS
9
OUTPUT POWER, IM3 vs. INPUT POWER
OUTPUT POWER, IM3 vs. INPUT POWER
30
20 VCC = 3.6 V
f1 = 1 000 MHz
10
f2 = 1 001 MHz
0
Pout
–10
–20
–30
IM3
–40
–50
–60
–70
–80
–90
–40 –35 –30 –25 –20 –15 –10
–5
0
Input Power Pin (1 tone) (dBm)
Output Power Pout (1 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (1 tone) (dBm)
0
Input Power Pin (1 tone) (dBm)
DI
Output Power Pout (1 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (1 tone) (dBm)
30
20
10
–20
–30
–40
–50
–60
ED
–10
IM3
VCC = 3.0 V
f1 = 2 200 MHz
f2 = 2 201 MHz
–70
–40 –35 –30 –25
–20 –15 –10
–5
0
Input Power Pin (1 tone) (dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
30
VCC = 3.3 V
20 f1 = 2 200 MHz OIP3 = +15.8 dBm
10 f2 = 2 201 MHz
0
Pout
–10
–20
IM3
–30
–40
–50
–60
IIP3 = –9.8 dBm
–70
–40 –35 –30 –25 –20 –15 –10
–5
0
Input Power Pin (1 tone) (dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
30
VCC = 3.6 V
20 f1 = 2 200 MHz
10 f2 = 2 201 MHz
0
Pout
–10
–20
IM3
–30
–40
–50
–60
–70
–40 –35 –30 –25
Remark The graphs indicate nominal characteristics.
10
Pout
0
NT
30
OIP3 = +20.9 dBm
VCC = 3.3 V
20
f1 = 1 000 MHz
10 f2 = 1 001 MHz
0
Pout
–10
–20
–30
IM3
–40
–50
–60
–70
–80
IIP3 = –4.0 dBm
–90
–40 –35 –30 –25 –20 –15 –10 –5
Output Power Pout (1 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (1 tone) (dBm)
Input Power Pin (1 tone) (dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
IN
U
30
20
10
0
Pout
–10
–20
–30
–40
IM3
–50
–60
VCC = 3.0 V
–70
f1 = 1 000 MHz
–80
f2 = 1 001 MHz
–90
–40 –35 –30 –25 –20 –15 –10 –5
0
Output Power Pout (1 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (1 tone) (dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
SC
O
Output Power Pout (1 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (1 tone) (dBm)
Output Power Pout (1 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (1 tone) (dBm)
μPC3239TB
Data Sheet PU10736EJ01V0DS
–20 –15 –10
Input Power Pin (1 tone) (dBm)
–5
0
OUTPUT POWER, IM3 vs. INPUT POWER
OUTPUT POWER, IM3 vs. INPUT POWER
30
20
10
0
Pout
–10
–20
–30
IM3
–40
–50
–60
VCC = 3.6 V
–70
TA = –40°C
f1 = 1 000 MHz
–80
f2 = 1 001 MHz
–90
–40 –35 –30 –25 –20 –15 –10 –5
0
Input Power Pin (1 tone) (dBm)
Output Power Pout (1 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (1 tone) (dBm)
Input Power Pin (1 tone) (dBm)
DI
Output Power Pout (1 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (1 tone) (dBm)
30
20
10
Pout
–10
–20
–30
–40
–50
–60
ED
0
IM3
–70
–40 –35 –30 –25
VCC = 3.0 V
TA = –40°C
f1 = 2 200 MHz
f2 = 2 201 MHz
–20 –15 –10
–5
0
Input Power Pin (1 tone) (dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
30
20
10
0
Pout
–10
NT
30
20
10
0
Pout
–10
–20
–30
IM3
–40
–50
–60
VCC = 3.3 V
–70
TA = –40°C
f1 = 1 000 MHz
–80
f2 = 1 001 MHz
–90
–40 –35 –30 –25 –20 –15 –10 –5
0
Output Power Pout (1 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (1 tone) (dBm)
Input Power Pin (1 tone) (dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
IN
U
30
20
10
0
Pout
–10
–20
–30
–40
IM3
–50
–60
VCC = 3.0 V
–70
TA = –40°C
f1 = 1 000 MHz
–80
f2 = 1 001 MHz
–90
–40 –35 –30 –25 –20 –15 –10 –5
0
Output Power Pout (1 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (1 tone) (dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
SC
O
Output Power Pout (1 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (1 tone) (dBm)
Output Power Pout (1 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (1 tone) (dBm)
μPC3239TB
IM3
–20
–30
–40
VCC = 3.3 V
TA = –40°C
f1 = 2 200 MHz
f2 = 2 201 MHz
–50
–60
–70
–40 –35 –30 –25
–20 –15 –10
–5
0
Input Power Pin (1 tone) (dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
30
20
10
0
Pout
–10
IM3
–20
–30
–40
–50
–60
–70
–40 –35 –30 –25
VCC = 3.6 V
TA = –40°C
f1 = 2 200 MHz
f2 = 2 201 MHz
–20 –15 –10
–5
0
Input Power Pin (1 tone) (dBm)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10736EJ01V0DS
11
OUTPUT POWER, IM3 vs. INPUT POWER
OUTPUT POWER, IM3 vs. INPUT POWER
30
20
10
0
Pout
–10
–20
–30
–40
IM3
–50
–60
VCC = 3.6 V
–70
TA = +85°C
f1 = 1 000 MHz
–80
f2 = 1 001 MHz
–90
–40 –35 –30 –25 –20 –15 –10 –5
0
Input Power Pin (1 tone) (dBm)
Output Power Pout (1 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (1 tone) (dBm)
Input Power Pin (1 tone) (dBm)
DI
Output Power Pout (1 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (1 tone) (dBm)
30
20
10
–20
–30
–40
–50
–60
ED
–10
IM3
–70
–40 –35 –30 –25
VCC = 3.0 V
TA = +85°C
f1 = 2 200 MHz
f2 = 2 201 MHz
–20 –15 –10
–5
0
Input Power Pin (1 tone) (dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
30
20
10
0
Pout
–10
IM3
–20
–30
–40
VCC = 3.3 V
TA = +85°C
f1 = 2 200 MHz
f2 = 2 201 MHz
–50
–60
–70
–40 –35 –30 –25
–20 –15 –10
–5
0
Input Power Pin (1 tone) (dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
30
20
10
0
Pout
–10
IM3
–20
–30
–40
–50
–60
–70
–40 –35 –30 –25
Remark The graphs indicate nominal characteristics.
12
Pout
0
NT
30
20
10
0
Pout
–10
–20
–30
–40
IM3
–50
–60
VCC = 3.3 V
–70
TA = +85°C
f1 = 1 000 MHz
–80
f2 = 1 001 MHz
–90
–40 –35 –30 –25 –20 –15 –10 –5
0
Output Power Pout (1 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (1 tone) (dBm)
Input Power Pin (1 tone) (dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
IN
U
30
20
10
0
Pout
–10
–20
–30
–40
IM3
–50
–60
VCC = 3.0 V
–70
TA = +85°C
f1 = 1 000 MHz
–80
f2 = 1 001 MHz
–90
–40 –35 –30 –25 –20 –15 –10 –5
0
Output Power Pout (1 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (1 tone) (dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
SC
O
Output Power Pout (1 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (1 tone) (dBm)
Output Power Pout (1 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (1 tone) (dBm)
μPC3239TB
Data Sheet PU10736EJ01V0DS
VCC = 3.6 V
TA = +85°C
f1 = 2 200 MHz
f2 = 2 201 MHz
–20 –15 –10
Input Power Pin (1 tone) (dBm)
–5
0
10
0
Pout
–20
–30
IM2
–40
–50
VCC = 3.0 V
f1 = 1 000 MHz
f2 = 1 001 MHz
–70
–40
–35
–30
–25
–20
–15
–10
OUTPUT POWER, IM2 vs. INPUT POWER
20
10
0
–30
–40
IM2
–50
VCC = 3.3 V
f1 = 1 000 MHz
f2 = 1 001 MHz
–60
–70
–40
–35
–30
20
10
0
–40
–25
–20
–15
–10
20
10
0
Pout
–20
–30
–40
–50
IM2
VCC = 3.6 V
f1 = 1 000 MHz
f2 = 1 001 MHz
–60
–70
–40
–35
–30
–25
–20
–30
–25
IM2 vs. INPUT POWER
50
40
30
20
10
0
–40
–15
–10
–35
–30
–25
VCC = 3.3 V
f1 = 1 000 MHz
f2 = 1 001 MHz
–20
–15
–10
Input Power Pin (1 tone) (dBm)
2nd Order Intermodulation Distortion IM2 (dBc)
OUTPUT POWER, IM2 vs. INPUT POWER
–10
–35
VCC = 3.0 V
f1 = 1 000 MHz
f2 = 1 001 MHz
–20
–15
–10
60
Input Power Pin (1 tone) (dBm)
DI
Output Power Pout (1 tone) (dBm)
2nd Order Intermodulation Distortion IM2 (2 tone) (dBm)
30
NT
Pout
–20
40
Input Power Pin (1 tone) (dBm)
Input Power Pin (1 tone) (dBm)
–10
50
IN
U
–60
2nd Order Intermodulation Distortion IM2 (dBc)
–10
IM2 vs. INPUT POWER
60
ED
20
2nd Order Intermodulation Distortion IM2 (dBc)
OUTPUT POWER, IM2 vs. INPUT POWER
SC
O
Output Power Pout (1 tone) (dBm)
2nd Order Intermodulation Distortion IM2 (2 tone) (dBm)
Output Power Pout (1 tone) (dBm)
2nd Order Intermodulation Distortion IM2 (2 tone) (dBm)
μPC3239TB
IM2 vs. INPUT POWER
60
50
40
30
20
10
0
–40
Input Power Pin (1 tone) (dBm)
–35
–30
–25
VCC = 3.6 V
f1 = 1 000 MHz
f2 = 1 001 MHz
–20
–15
–10
Input Power Pin (1 tone) (dBm)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10736EJ01V0DS
13
OUTPUT POWER, 2f0 vs. INPUT POWER
OUTPUT POWER, 2f0 vs. INPUT POWER
20
20
10
10
–10
Pout
–20
–30
–40
–50
2f0
–60
–70
VCC = 3.0 V
–80
–90
–50
–30
–20
–10
–30
–40
–50
–60
–70
–90
–50
0
20
f = 1 000 MHz
–40
–30
–20
–10
0
K FACTOR vs. FREQUENCY
10.0
10
0
Pout
–10
K Factor K
–20
–30
–40
–50
2f0
–60
Pin = –30 dBm
9.0 VCC =3.3 V
K (1.0 GHz) =1.44
8.0 K (2.2 GHz) =1.32
7.0 VCC =3.6 V
K (1.0 GHz) =1.51
6.0 K (2.2 GHz) =1.41
VCC =3.0 V
5.0 K (1.0 GHz) =1.59
K (2.2 GHz) =1.54
4.0
VCC = 3.0 V, 3.3 V, 3.6 V
3.0
NT
Output Power Pout (dBm)
2nd Harmonics 2f0 (dBm)
VCC = 3.3 V
IN
U
OUTPUT POWER, 2f0 vs. INPUT POWER
2.0
–70
VCC = 3.6 V
f = 1 000 MHz
–80
–40
–30
–20
–10
1.0
0
0.0
0.0
SC
O
Input Power Pin (dBm)
DI
Remark The graphs indicate nominal characteristics.
14
2f0
Input Power Pin (dBm)
Input Power Pin (dBm)
–90
–50
Pout
–20
–80
f = 1 000 MHz
–40
0
–10
ED
0
Output Power Pout (dBm)
2nd Harmonics 2f0 (dBm)
Output Power Pout (dBm)
2nd Harmonics 2f0 (dBm)
μPC3239TB
Data Sheet PU10736EJ01V0DS
1.0
2.0
Frequency f (GHz)
3.0
4.0
μPC3239TB
S-PARAMETERS (TA = +25°C, VCC = Vout = 3.3 V, Pin = −30 dBm)
S11−FREQUENCY
NT
1
S22−FREQUENCY
–0.45 Ω
16.42 Ω
IN
U
2
START :
52.77 Ω
42.78 Ω
ED
1 : 1 000 MHz
2 : 2 200 MHz
100 MHz
STOP
: 4 100 MHz
50.90 Ω
49.58 Ω
–1.18 Ω
5.15 Ω
SC
O
1 : 1 000 MHz
2 : 2 200 MHz
2
DI
1
START :
100 MHz
STOP
: 4 100 MHz
Remarks 1. Measured on the test circuit of evaluation board.
2. The graphs indicate nominal characteristics.
Data Sheet PU10736EJ01V0DS
15
μPC3239TB
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
DI
SC
O
NT
IN
U
ED
URL http://www.necel.com/microwave/en/
16
Data Sheet PU10736EJ01V0DS
μPC3239TB
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.1
ED
0.2+0.1
–0.05
0.65
0.65
1.3
2.0+0.15
–0.20
1.25±0.1
0.15+0.1
–0.05
IN
U
DI
SC
O
NT
0 to 0.1
0.7
0.9±0.1
0.1 MIN.
Data Sheet PU10736EJ01V0DS
17
μPC3239TB
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground terminals must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to the VCC line.
accordance with desired frequency.
(5) The DC cut capacitor must be attached to input and output pin.
RECOMMENDED SOLDERING CONDITIONS
ED
(4) The inductor (L) must be attached between VCC and output pins. The inductance value should be determined in
This product should be soldered and mounted under the following recommended conditions. For soldering methods
Soldering Method
Wave Soldering
Soldering Conditions
Condition Symbol
Peak temperature (package surface temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220°C or higher
: 60 seconds or less
Preheating time at 120 to 180°C
: 120±30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (molten solder temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
NT
Infrared Reflow
IN
U
and conditions other than those recommended below, contact your nearby sales office.
IR260
WS260
Preheating temperature (package surface temperature) : 120°C or below
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
SC
O
Partial Heating
Maximum number of flow processes
DI
Caution Do not use different soldering methods together (except for partial heating).
18
Data Sheet PU10736EJ01V0DS
HS350
ED
μPC3239TB
SC
O
NT
IN
U
• The information in this document is current as of October, 2008. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
DI
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1