Data Sheet Schottky Barrier Diode RBQ10B45A lDimensions (Unit : mm) lLand size figure (Unit : mm) 6.0 2.3±0.2 0.1 6.5±0.2 6.0 0.5±0.1 C0.5 1.5±0.3 5.1±0.2 0.1 0.75 0.9 （1） lConstruction Silicon epitaxial planer 0.65±0.1 （2） （3） 2.5 ① 0.8 min 3)High reliability 1.6 9.5±0.5 1.6 5.5±0. 3 lFeatures 1)Power mold type.(CPD) 2)Low IR CPD 0.5±0.1 2.3±0.2 2.3±0.2 3.0 2.0 lApplications General rectification 2.3 2.3 lStructure 1.0±0.2 ROHM : CPD JEITA : SC-63 ① Manufacture Date lTaping specifications (Unit : mm) lAbsolute maximum ratings(Tc=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc)(*2) Junction temperature Storage temperature Limits 45 45 10 50 150 Symbol VRM VR Io IFSM Tj Tstg (*1)Business frequencies, Rating of R-load, 1/2 Io per diode. (*2)Per diode. lElectrical characteristics(Tj=25°C) Parameter Unit V V A A °C °C -40 to +150 Symbol VF Min. Typ. Max. Unit Forward voltage - - 0.65 V Reverse current IR - - 0.15 mA www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 Conditions IF=5A VR=45V 2011.11 - Rev.A Data Sheet RBQ10B45A 100000 10 Ta=150°C REVERSE CURRENT:IR(mA) FORWARD CURRENT:IF(A) 10000 Ta=125°C 1 Ta=75°C Ta=150°C Ta=25°C 0.1 1000 Ta=125°C 100 10 Ta=75°C 1 Ta=25°C 0.1 Ta=-25°C Ta=-25°C 0.01 0.01 0 100 200 300 400 500 600 700 0 800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 20 30 40 50 REVERSE VOLTAGE：VF(V) VR-IR CHARACTERISTICS 1000 600 f=1MHz 590 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 100 10 Ta=25°C IF=5A n=30pcs 580 570 AVE:551.3mV 560 550 540 530 520 510 500 1 0 5 10 15 20 25 30 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 550 REVERSE CURRENT:IR(mA) 25 20 AVE:12.2mA 15 10 Ta=25°C f=1MHz VR=0V n=10pcs 540 530 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25°C VR=45V n=30pcs 520 510 AVE:489.8pF 500 490 480 470 5 460 0 450 IR DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Ct DISPERSION MAP 2/4 2011.11 - Rev.A 30 300 1cyc IFSM RESERSE RECOVERY TIME:trr(ns) 250 PEAK SURGE FORWARD CURRENT:IFSM(A) Data Sheet RBQ10B45A 8.3ms 200 AVE121A 150 100 50 0 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 AVE:10.8ns 15 10 5 0 Ifsm DISPERSION MAP trr DISPERSION MAP 300 300 IFSM 250 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 8.3ms 8.3ms 1cyc 200 150 100 50 IFSM t 200 150 100 50 0 0 1 10 100 1 10 100 TIME:t(ms) Ifsm-t CHARACTERISTICS NUMBER OF CYCLES Ifsm-CYCLE CHARACTERISTICS 40 100 30 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 35 10 Rth(j-c) 1 25 D=1/2 20 Sin(q＝180) 15 10 DC 5 0.1 0.001 0 0.01 0.1 1 10 100 0 1000 10 15 20 25 30 35 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5 3/4 2011.11 - Rev.A Data Sheet RBQ10B45A 30 2 0A 0V 25 Io VR AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t REVERSE POWER DISSIPATION:PR (W) 1.5 1 DC D=1/2 0.5 Sin(q＝180) T 20 15 D=t/T VR=20V Tj=150°C DC D=1/2 10 5 Sin(q＝180) 0 0 0 10 20 30 40 0 50 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 30 Io 0A 0V t 20 T DC AVE:23.3kV 25 VR D=t/T VR=20V Tj=150°C ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 25 15 D=1/2 10 5 20 15 10 AVE:4.9kV 5 Sin(q＝180) 0 0 0 25 50 75 100 125 150 C=200pF R=0W CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. C=100pF R=1.5kW ESD DISPERSION MAP 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A