ROHM RB531S

Data Sheet
Schottky Barrier Diode
RB531S-30
Dimensions(Unit : mm)
Applications
General rectification
Land size figure(Unit : mm)
0.12±0.05
0.8
N
1.6±0.1
3)High reliability
1.2±0.05
Features
1)Ultra small mold type.(EMD2)
2)Low VF
1.7
0.6
0.8±0.05
EMD2
Construction
Silicon epitaxial planer
Structure
0.3±0.05
0.6±0.1
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
dot (year week factory)
Taping specifications(Unit : mm)
0.2±0.05
φ1.5±0.05
2.0±0.05
φ1.55±0.05
0.2
φ0.5
0.95±0.06
0.90±0.05
0
空ポケット
Empty
pocket
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage(DC)
Average rectified forward current
Forward current surge peak(60Hz/1cyc)
Junction temperature
Storage temperature
Electical voltage(Ta=25C)
Parameter
Forward voltage
Reverse current
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4.0±0.1
2.0±0.05
Limits
C
C
Symbol
VF
Min.
-
Typ.
-
Max.
0.35
Unit
V
IR
-
-
10
μA
1/3
0.76±0.05
0.75±0.05
Unit
V
mA
mA
30
100
500
125
-40to+125
VR
Io
IFSM
Tj
Tstg
1.25
0.06
1.26±0.05
00
3.5±0.05
0.6
1.25
0.06
1.3±0.06
0
0
2.40±0.05
2.45±0.1
8.0±0.15
1.75±0.1
4.0±0.1
Conditions
IF=10mA
VR=10V
2011.03 - Rev.B
Data Sheet
RB531S-30
Electrical characteristics curves
100
Ta=125C
100
Ta=75C
10
Ta=-25C
1
Ta=25C
0.1
0.01
0.001
REVERSE CURRENT : IR(A)
1000
Ta=75C
100
Ta=25C
10
1
Ta=-25C
0.1
0.01
100
200
300
400
500
600
0
10
FORWARD VOLTAGE : V F(mV)
VF-IF CHARACTERISTICS
1
0
270
AVE : 270.2mV
260
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
280
20
15
10
AVE : 2.037A
5
0
VF DISPERSION MAP
PEAK SURGE
FORWARD CURRENT : IFSM(A)
Ifsm
15
8.3ms
10
AVE : 3.90A
5
0
8.3ms
8.3ms
1cyc
5
10
IF=100mA
FORWARD POWER
DISSIPATION : Pf(W)
Mounted on epoxy board
0.1
1
14
13
12
11
10
Ifsm
t
5
1
10
100
0.1
0.08
0.08
D=1/2
DC
0.06
Sin(=180)
0.04
0.06
D=1/2
0.04
DC
Sin(=180)
0.02
time
300s
0.01
AVE : 17.34pF
15
TIME : t(ms)
IFSM-t CHARACTERISTICS
0.02
1ms
16
100
0.1
Rth(j-c)
IM=10mA
17
NUMBER OF CYCLES
IFSM -CYCLE CHARACTERISTICS
IFSM DISRESION MAP
100
Ta=25C
f=1MHz
VR=0V
n=10pcs
18
0
1
Rth(j-a)
20
10
Ifsm
0
1000
15
Ct DISPERSION MAP
10
1cyc
10
19
IR DISPERSION MAP
20
5
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
20
Ta=25C
VR=10V
n=30pcs
25
REVERSE CURRENT : IR(A)
FORWARD VOLTAGE : VF(mV)
290
10
0.001
10
30
Ta=25C
VF=10mA
n=30pcs
250
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
30
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
300
PEAK SURGE
FORWARD CURRENT : IFSM(A)
20
f=1MHｚ
PEAK SURGE
FORWARD CURRENT : IFSM(A)
0
REVERSE POWER
DISSIPATION : PR (W)
FORWARD CURRENT : IF(mA)
Ta=125C
CAPACITANCE BETWEEN TERMINALS : Ct(pF)
10000
1000
10
0
0
100
1000
TIME : t(s)
Rth-t CHARACTERISTICS
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0
0.1
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2/3
0.2
0
10
20
30
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
2011.03 - Rev.B
0.3
0.3
0A
Io
0V
VR
t
0.2
DC
T
D=t/T
VR=15V
Tj=125C
D=1/2
0.1
Sin(=180)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Data Sheet
RB531S-30
0A
Io
0V
VR
t
0.2
DC
T
D=t/T
VR=15V
Tj=125C
D=1/2
0.1
Sin(=180)
0
0
0
25
50
75
100
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
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© 2011 ROHM Co., Ltd. All rights reserved.
125
0
25
50
75
100
125
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
3/3
2011.03 - Rev.B
Notice
Notes
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R1120A