Data Sheet 10V Drive Nch MOSFET RCX120N25 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TO-220FM φ3.2 10.0 4.5 1.2 1.3 14.0 2.5 8.0 15.0 Features 1) Low on-resistance. 2) High speed switching. 3) Gate-source voltage VGSS garanteed to be ±30V 12.0 2.8 0.8 2.54 2.54 2.6 0.75 (1) (2) (3) 4) High Power Package (TO-220FM). Application Switching Inner circuit ∗1 Packaging specifications Type Package Code Bulk 500 Basic ordering unit (pieces) RCX120N25 (1) Gate (2) Drain (3) Souce Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage VGSS Limits Unit 250 30 V V ID *3 12 A Avalanche current IDP IS ISP IAS *1 48 12 48 6 A A A A Avalanche energy Power dissipation(Tc=25C) EAS PD *2 10.5 40 mJ W Channel temperature Range of storage temperature Tch Tstg 150 55 to 150 C C Limits 3.125 Unit C / W Drain current Source current (Body Diode) Continuous Pulsed Continuous Pulsed *3 *1 *2 (1) (2) (3) 1 BODY DIODE *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25T ch=25C *3 Limited only by maximum channel temperature allowed. Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) * * T C=25C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.10 - Rev.A Data Sheet RCX120N25 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions - - 100 nA VGS=30V, VDS=0V 250 - - V ID=1mA, V GS=0V IDSS - - 10 A VDS=250V, VGS=0V VGS (th) 3 - 5 V VDS=10V, ID=1mA RDS (on)* - 180 235 l Yfs l* 3.25 - - S ID=6A, VDS=10V Input capacitance Ciss - 1800 - pF VDS=25V Output capacitance Coss - 100 - pF VGS=0V Reverse transfer capacitance Crss - 60 - pF f=1MHz Turn-on delay time td(on) * - 33 - ns ID=6A, VDD 125V tr * - 65 - ns VGS=10V td(off) * - 45 - ns RL=20.83 tf * - 20 - ns RG=10 Total gate charge Qg * - 35 - nC ID=12A, Gate-source charge Qgs * Qgd * - 15 - nC VDD 125V - 12 - nC VGS=10V Gate-source leakage IGSS Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Turn-off delay time Fall time Gate-drain charge m ID=6A, VGS=10V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. - Typ. - Max. 1.5 Unit V Conditions Is=12A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.10 - Rev.A Data Sheet RCX120N25 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 15 6 Ta=25°C Pulsed Ta=25°C Pulsed VGS=10.0V 5 VGS=10.0V VGS=8.0V VGS=8.0V Drain Current : ID [A] Drain Current : ID [A] 10 VGS=7.0V 5 VGS=6.5V VGS=7.0V 4 3 2 VGS=6.5V 1 VGS=6.0V VGS=6.0V 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 Drain-Source Voltage : VDS [V] 0.4 0.5 0.6 0.7 0.8 0.9 1 Fig.4 Gate Threshold Voltage vs. Channel Temperature Fig.3 Typical Transfer Characteristics 8 100 VDS=10V pulsed VDS=10V ID=1mA pulsed Gate Threshold Voltage : VGS(th) [V] 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Drain Currnt : ID [A] 0.3 Drain-Source Voltage : VDS [V] 0.1 0.01 0.001 6 4 2 0.0001 0 0.00001 0 1 2 3 4 5 6 7 8 9 -50 10 0 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 100 150 Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 10 0.5 Static Drain-Source On-State Resistance :RDS(on)[Ω] VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [Ω] 50 Channel Temperature : T ch [℃] Gate-Source Voltage : VGS [V] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 0.001 VGS=10V pulsed 0.4 0.3 ID=12A 0.2 ID=6A 0.1 0 0.01 0.1 1 10 100 -50 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 50 100 150 Channel Temperature : Tch [℃] Drain Current : ID [A] 3/6 2011.10 - Rev.A Data Sheet RCX120N25 Fig.8 Source Current vs. Source-Drain Voltage Fig.7 Forward Transfer Admittance vs. Drain Current 100 100 VGS=0V pulsed 10 10 Source Current : Is [A] Forward Transfer Admittance:Yfs [S] VDS=10V pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 0.01 0.01 0.1 1 10 0 100 0.5 Drain Current : ID [A] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 2 10000 VDD≒125V VGS=10V RG=10Ω Ta=25°C Pulsed Ta=25°C Pulsed 0.3 1000 ID=12.0A Switching Time : t [ns] Static Drain-Source On-State Resistance RDS(on)[Ω] 1.5 Fig.10 Switching Characteristics 0.4 ID=6.0A 0.2 0.1 tf td(off) 100 td(on) 10 tr 1 0 0 5 10 15 0.01 20 0.1 Gate-Source Voltage : VGS [V] 1 10 100 Drain Current : ID [A] Fig.12 Typical Capacitance vs. Drain-Source Voltage Fig.11 Dynamic Input Characteristics 10000 15 Ta=25°C VDD=125V ID=12A Pulsed 1000 Capacitance : C [pF] Gate-Source Voltage : VGS [V] 1 Source-Drain Voltage : VSD [V] 10 Ciss 100 Coss 5 Crss 10 Ta=25°C f=1MHz VGS=0V 1 0 0 5 10 15 20 25 30 35 40 45 50 0.01 55 1 10 100 1000 Drain-Source Voltage : VDS [V] Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 4/6 2011.10 - Rev.A Data Sheet RCX120N25 Fig.14 Maximum Safe Operating Area Fig.13 Reverse Recovery Time vs. Source Current Operation in this area is limited by RDS(on) (VGS = 10V) 100 1000 10 Drain Current : ID [ A ] Reverse Recovery Time : trr [ns] Ta=25°C Vgs=0V di/dt=100A/us Pulsed 100 PW = 100μs 1 PW = 1ms PW = 10ms 0.1 DC Operation Ta=25°C Single Pulse 0.01 10 1 10 0.1 100 1 10 100 1000 Drain-Source Voltage : VDS [ V ] Source Current : IS [A] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal Resistance : r（t） 10 Ta=25°C Single Pulse 1 0.1 0.01 0.001 Rth(ch-a)=80.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.10 - Rev.A Data Sheet RCX120N25 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 2 L IAS V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 6/6 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A