Data Sheet 10V Drive Nch MOSFET RCX160N20 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TO-220FM φ3.2 10.0 4.5 1.2 1.3 14.0 2.5 8.0 15.0 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 12.0 2.8 0.8 2.54 2.54 0.75 2.6 (1) (2) (3) Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) RCX160N20 Inner circuit Bulk 500 ∗1 Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage Drain current Source current (Body Diode) Continuous VGSS ID *3 Pulsed Continuous IDP IS *1 Pulsed ISP *1 Avalanche current Avalanche energy IAS *2 EAS *2 Power dissipation PD Channel temperature Range of storage temperature *4 Tch Tstg (1) Gate (2) Drain (3) Source Limits Unit 200 30 V V 16 A 64 16 A A 64 A 8 20.7 40 A mJ W 150 55 to 150 C C Limits 3.125 Unit C / W (1) (2) (3) 1 BODY DIODE *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, T ch=25°C *3 Limited only by maximum channel temperature allowed. *4 TC=25°C Thermal resistance Parameter Channel to Case Symbol Rth (ch-c)* * T C=25°C * Limited only by maximum channel temperature allowed. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2011.08 - Rev.A 1/6 Data Sheet RCX160N20 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Max. Unit - - 100 nA VGS=30V, VDS=0V 200 - - V ID=1mA, VGS=0V IGSS Drain-source breakdown voltage V(BR)DSS Conditions Typ. IDSS - - 10 A VDS=200V, VGS=0V VGS (th) 3.25 - 5.25 V VDS=10V, ID=1mA RDS (on)* - 135 180 l Yfs l * 4 8 - S VDS=10V, ID=8A Input capacitance Ciss - 1370 - pF VDS=25V Output capacitance Coss - 95 - pF VGS=0V Reverse transfer capacitance Crss - 50 - pF f=1MHz Turn-on delay time td(on) * - 27 - ns VDD 100V, ID=8A tr * - 47 - ns VGS=10V Turn-off delay time td(off) * - 42 - ns RL=12.5 Fall time tf * Qg * Qgs * Qgd * - 17 - ns RG=10 - 26 - nC VDD 100V, ID=16A - 10 11 - nC nC VGS=10V Min. - Typ. - Max. 1.5 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Total gate charge Gate-source charge Gate-drain charge m ID=8A, VGS=10V *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Conditions Unit V Is=16A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A Data Sheet RCX160N20 Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 8 16 Ta=25°C Pulsed 14 VGS=10.0V VGS=9.0V 6 Drain Current : ID [A] Drain Current : ID [A] VGS=9.0V 12 VGS=8.0V 4 VGS=7.0V 2 Ta=25°C Pulsed VGS=10.0V VGS=8.0V 10 8 6 VGS=7.0V 4 2 VGS=6.0V VGS=6.0V 0 0 0 0.2 0.4 0.6 0.8 1 0 2 Drain-Source Voltage : VDS [V] 4 6 8 Fig.4 Gate Threshold Voltage vs. Channel Temperature Fig.3 Typical Transfer Characteristics 5 100 Gate Threshold Voltage : VGS(th) [V] VDS=10V pulsed Drain Currnt : ID [A] 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 VDS=10V ID=1mA pulsed 4 3 2 1 0.01 0 0.001 0 1 2 3 4 5 6 7 8 9 -50 10 -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] Gate-Source Voltage : VGS [V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 0.5 10 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [W] VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [W] 10 Drain-Source Voltage : VDS [V] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 0.4 ID=16A 0.3 ID=8A 0.2 0.1 0 0.1 1 10 100 -50 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] 3/6 2011.08 - Rev.A Data Sheet RCX160N20 Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Source Current vs. Source-Drain Voltage 100 100 VGS=0V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Source Current : Is [A] Forward Transfer Admittance Yfs [S] VDS=10V pulsed 0.1 1 0.1 0.01 0.01 0.01 0.1 1 10 100 0 0.5 1 1.5 Source-Drain Voltage : VSD [V] Drain Current : ID [A] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.10 Switching Characteristics 0.5 10000 VDD≒100V VGS=10V RG=10Ω Ta=25°C Pulsed 0.4 1000 Switching Time : t [ns] Static Drain-Source On-State Resistance RDS(on) [W] Ta=25°C Pulsed ID=8A 0.3 ID=16A 0.2 tf 100 10 tr 0.1 0 1 0 2 4 6 8 10 12 14 16 18 20 0.01 0.1 Gate-Source Voltage : VGS [V] 1 10 Drain Current : ID [A] Fig.11 Dynamic Input Characteristics Fig.12 Typical Capacitance vs. Drain-Source Voltage 10000 15 Ta=25°C VDD=100V ID=16A Pulsed 1000 10 Capacitance : C [pF] Gate-Source Voltage : VGS [V] td(off) td(on) 5 Ciss 100 Coss Crss 10 Ta=25°C f=1MHz VGS=0V 1 0 0 5 10 15 20 25 30 0.01 35 Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] 4/6 2011.08 - Rev.A Data Sheet RCX160N20 Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width Fig.13 Maximum Safe Operating Area 100 Normalized Transient Thermal Resistance : r（t） 10 Drain Current : ID [ A ] 10 PW = 100μs Operation in this area is limited by RDS(on) (VGS = 10V) 1 PW = 1ms 0.1 PW = 10ms Ta=25°C Single Pulse 0.01 0.1 1 10 100 1 0.1 0.01 Rth(ch-a)=55.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 1000 Drain-Source Voltage : VDS [ V ] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Ta=25°C Single Pulse 0.001 0.01 0.1 1 10 100 1000 Pulse width ： Pw (s) 5/6 2011.08 - Rev.A Data Sheet RCX160N20 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 L IAS 2 V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 6/6 2011.08 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A